Organic light emission apparatus and electronic equipment
An organic EL apparatus includes a substrate, an organic EL element that is disposed on the substrate, and a sealing layer that seals the organic light emission element by covering, and the sealing layer is a multilayer body which includes a first sealing layer, a buffer layer, and a second sealing layer respectively having different functions and being sequentially stacked from the organic EL element side. The second sealing layer is mainly made of silicon oxynitride, and includes an inner layer, an intermediate layer, and an outer layer being sequentially stacked on the organic EL element side. Stress of the intermediate layer is equal to or less than stress of the inner layer, and stress of the outer layer is greater than the stress of the inner layer.
1. An organic light emission apparatus comprising:
a substrate;
an organic light emission element that is disposed above the substrate; and
a sealing layer that covers the organic light emission element, wherein the sealing layer including a first sealing layer, a buffer layer, and a second sealing layer,
wherein the first sealing layer, the buffer layer, and the second sealing layer are sequentially stacked from the organic light emission element side,
wherein the second sealing layer consists essentially of silicon oxynitride, and includes an inner layer, an intermediate layer, and an outer layer,
wherein the inner layer, the intermediate layer, and the outer layer are sequentially stacked from the organic light emission element side,
wherein stress of the intermediate layer is less than stress of the inner layer, and stress of the outer layer is greater than the stress of the inner layer, and
wherein at the time of forming the intermediate layer, the intermediate layer is formed by being divided in plural times with equal thickness.
2. The organic light emission apparatus according to claim 1 , wherein the stresses of the inner layer, the intermediate layer, and the outer layer are respectively 0 MPa or more and 1000 MPa or less.
3. The organic light emission apparatus according to claim 2 , wherein the stress of the inner layer is 100 MPa or more and 300 MPa or less,
wherein the stress of the intermediate layer is 0 MPa or more and 200 MPa or less, and
wherein the stress of the outer layer is 400 MPa or more and 1000 MPa or less.
4. The organic light emission apparatus according to claim 1 , wherein a thickness of the intermediate layer is the greatest among the thicknesses of the inner layer, the intermediate layer, and the outer layer.
5. The organic light emission apparatus according to claim 1 , wherein the thickness of the inner layer is equal to the thickness of the outer layer.
6. The organic light emission apparatus according to claim 1 , wherein the thicknesses of the inner layer, the intermediate layer, and the outer layer are respectively 100 nm or more and 300 nm or less.
7. The organic light emission apparatus according to claim 1 , wherein a total thickness of the inner layer, the intermediate layer, and the outer layer is 400 nm or more and 1200nm or less.
8. The organic light emission apparatus according to claim 1 , wherein in the inner layer, when a transmittance of a peak generated at near 1000 cm −1 in a measurement using a Fourier transformation type infrared spectrophotometer is represented by A l [%], and the transmittance of a peak generated at near 3200 cm −1 is represented by B 1 [%], B 1 /A l is 0.1 or more and 0.25 or less,
wherein in the intermediate layer, when the transmittance of the peak generated at near 1000 cm −1 in the measurement using the Fourier transformation type infrared spectrophotometer is represented by A 2 [%], and the transmittance of the peak generated at near 3200 cm −1 is represented by B 2 [%], B 2 /A 2 is 0.18 or more and 0.30 or less, and
wherein in the outer layer, when the transmittance of the peak generated at near 1000 cm −1 in the measurement using the Fourier transformation type infrared spectrophotometer is represented by A 3 [%], and the transmittance of the peak generated at near 3200 cm −1 is represented by B 3 [%], B 3 /A 3 is 0.01 or more and 0.07 or less.
9. The organic light emission apparatus according to claim 1 , wherein the first sealing layer consists essentially of silicon oxynitride, and the buffer layer consists essentially of resin material.
10. An electronic equipment comprising:
the organic light emission apparatus according to claim 1 .
11. An electronic equipment comprising:
the organic light emission apparatus according to claim 2 .
12. An electronic equipment comprising:
the organic light emission apparatus according to claim 3 .
13. An electronic equipment comprising:
the organic light emission apparatus according to claim 4 .
14. An electronic equipment comprising:
the organic light emission apparatus according to claim 5 .
15. An electronic equipment comprising:
the organic light emission apparatus according to claim 6 .
16. An electronic equipment comprising:
the organic light emission apparatus according to claim 7 .
17. An electronic equipment comprising:
the organic light emission apparatus according to claim 8 .
18. An electronic equipment comprising:
the organic light emission apparatus according to claim 9 .