Semiconductor light-emitting element
A semiconductor light-emitting element according to the present invention includes a first semiconductor layer of a first conductivity type, a light-emitting functional layer formed on the first semiconductor layer, and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer includes a doped layer that is formed on the first semiconductor layer and doped with a dopant of the second conductivity type, a base layer formed on the doped layer, the base layer having such a composition that causes stress and strain in said base layer from the doped layer, said base layer including a plurality of base segments formed in a random net shape, and a quantum well structure layer formed on the base layer.
1. A semiconductor light-emitting element comprising:
a first semiconductor layer of a first conductivity type;
a light-emitting functional layer formed on said first semiconductor layer; and
a second semiconductor layer that is formed on said light-emitting functional layer and is of a second conductivity type opposite to that of said first semiconductor layer, wherein
said light-emitting functional layer includes:
a doped layer that is formed on said first semiconductor layer and doped with a dopant of said second conductivity type,
a base layer formed on said doped layer, said base layer having such a composition that causes stress and strain in said base layer from said doped layer, said base layer including a plurality of base segments formed in a random net shape, and
a quantum well structure layer formed on said base layer.
2. The semiconductor light-emitting element according to claim 1 , wherein said quantum well structure layer is an undoped layer.
3. The semiconductor light-emitting element according to claim 1 , wherein said dopant of said doped layer is Mg.
4. The semiconductor light-emitting element according to claim 1 , wherein:
said first semiconductor layer and said doped layer include a GaN composition;
said quantum well structure layer includes a quantum well layer and a barrier layer that are formed on said base layer;
said base layer and said barrier layer include an AIN or AIGaN composition; and
said quantum well layer includes an InGaN composition.
5. The semiconductor light-emitting element according to claim 1 , further comprising a second light-emitting functional layer between said doped layer and said first semiconductor layer, said second light-emitting functional layer including a uniformly flat quantum well structure.
6. The semiconductor light-emitting element according to claim 5 , wherein said second light-emitting functional layer has a center emission wavelength different from that of said quantum well layer.