Method of wiring layout, semiconductor device, program for supporting design of wiring layout, and method for manufacturing semiconductor device

1. A design method of mask patterns, the method comprising:

providing base patterns in a base plane, the base patterns including a plurality of first patterns and a plurality of second patterns, the plurality of first patterns extending in a first direction and being arranged in a second direction intersecting the first direction, and the plurality of second patterns extending in the first direction and being positioned respectively between the plurality of first patterns, the plurality of second patterns being disposed separated from the plurality of first patterns respectively by a blank space;

providing a first bridge part connecting two adjacent first patterns of the plurality of first patterns in the second direction, the first bridge part dividing a second pattern of the plurality of second patterns positioned between the two adjacent first patterns, and a first additional blank space being provided between the divided second pattern and the first bridge part; and

extracting a first group of the plurality of first patterns and the first bridge part or a second group of the plurality of second patterns to make the mask patterns.

2. The method according to claim 1 , further comprising:

providing a cutout part separating one of the plurality of first patterns and the plurality of second patterns into two first patterns or two second patterns.

3. The method according to claim 2 , wherein

the cutout part is converted into a portion thinner than the other portions of the mask patterns, when making the mask patterns.

4. The method according to claim 2 , wherein

protrusions are added to parts of the mask patterns respectively, when making the mask patterns, the parts of the mask patterns sandwiching a cutout place corresponding to the cutout part in the base pattern, and the protrusions protruding from both the parts of the mask patterns toward the cutout place.

5. The method according to claim 1 , further comprising:

providing a second bridge part connecting two adjacent second patterns of the plurality of second patterns in the second direction, the second bridge part dividing a first pattern of the plurality of first patterns positioned between the two adjacent second patterns, and a second additional blank space being provided between the first pattern divided and the second bridge part, wherein

the second group includes the second bridge part, and the second bridge part is extracted with the plurality of second patterns.

6. A design method of mask patterns, the method comprising:

providing base patterns in a base plane, the base patterns including a plurality of first patterns, a plurality of second patterns, and a plurality of third patterns,

the plurality of first patterns extending in a first direction and being arranged in a second direction intersecting the first direction,

the plurality of second patterns extending in the first direction and being positioned respectively between the plurality of first patterns, and

the plurality of third patterns extending in the first direction, and being positioned respectively between a first pattern of the plurality of first patterns and a second pattern of the plurality of second patterns adjacent to the first pattern;

providing a first bridge part connecting two adjacent third patterns of the plurality of third patterns in the second direction, the first bridge part dividing a first pattern of the plurality of first patterns or a second pattern of the plurality of second patterns positioned between the two adjacent third patterns; and

extracting the plurality of first patterns or the plurality of second patterns to make the mask patterns.

7. The method according to claim 6 , further comprising:

providing a second bridge part connecting two adjacent first patterns or two adjacent second patterns in the second direction, the second bride part being provided between two first bridge parts adjacent to each other in the first direction;

wherein the second bridge part is extracted with the plurality of first patterns or the plurality of second patterns.

8. A design method of mask patterns, the method comprising:

providing a base pattern including a plurality of first dot patterns and a plurality of second dot patterns, the plurality of first dot patterns being arranged in a matrix, and the plurality of second dot patterns being positioned respectively between the plurality of first dots patterns in a diagonal direction of the matrix;

providing a plurality of first patterns each connecting two adjacent first dot patterns of the plurality of first dot patterns without overlapping any one of the plurality of second dot patterns;

providing a plurality of second patterns each connecting two adjacent second dot patterns of the plurality of second dot patterns without overlapping any one of the plurality of first dot patterns and the plurality of first patterns; and

extracting a first group of the plurality of first dot patterns and the plurality of first patterns or a second group of the plurality of second dot patterns and the plurality of second patterns to make the mask pattern.

9. The method according to claim 8 , further comprising

providing a cutout part separating one of the plurality of first patterns and the plurality of second patterns into two first patterns or two second patterns.

10. The method according to claim 9 , wherein

the cutout part is converted into a portion thinner than the other portions of the mask patterns, when making the mask patterns.

11. The method according to claim 9 , wherein

protrusions are added to parts of the mask patterns respectively, when making the mask patterns, the parts of the mask patterns sandwiching a cutout place corresponding to the cutout part in the base pattern, and the protrusions protruding from both the parts of the mask patterns toward the cutout place.

12. The method according to claim 8 , further comprising:

adding a plurality of third dot patterns to the base pattern, the plurality of third dot patterns being positioned respectively between the plurality of first dots patterns and the plurality of second dot patterns in the diagonal direction of the matrix;

providing a plurality of third patterns each connecting two adjacent third dot patterns of the plurality of third dot patterns without overlapping any one of the first dot patterns, the plurality of second dot patterns, the plurality of first patterns, and the plurality of second patterns.

13. A design method of mask patterns, the method comprising:

providing a base pattern including first dot patterns to P-th dot patterns (P=2n−1+1, “n” is integer larger than 2), the first dot patterns being arranged in a matrix, the P-th dot patterns being positioned respectively between the first dots patterns in a diagonal direction of the matrix, and m-th dot patterns (“m” is integer and 1<m<P) being positioned respectively between (m−1)-th dot patterns and P-th dot patterns in the diagonal direction; and

providing first patterns, m-th patterns and P-th patterns on the base pattern, wherein

the first patterns each connect two adjacent first dot patterns of the first dot patterns without overlapping any one of the second to the P-th dot patterns and the second to the P-th patterns;

the m-th patterns each connect two adjacent m-th dot patterns of the m-th dot patterns without overlapping any one of the first to (m−1)-th dot patterns, the (m+1)-th to P-th dot patterns, the first to (m−1)-th patterns and the (m+1)-th to P-th patterns; and

the P-th patterns each connect two adjacent P-th dot patterns of the P-th dot patterns without overlapping any one of the first to (P−1)th dot patterns and the first to (P−1)-th patterns.

14. The method according to claim 13 , further comprising:

extracting a first group of the first dot patterns and the first patterns or a second group of the P-th dot patterns and the P-th patterns to make the mask pattern.

15. A design method of mask patterns, the method comprising:

providing a plurality of pairs of start point and end point on a base plane;

drawing first patterns and second patterns on the base plane, the first patterns and the second patterns each connecting a start point and an end point of the plurality of pairs, the first patterns each being drawn without overlapping any one of the second patterns and not lying adjacent to other first patterns without any one of the second patterns interposed, and the second patterns each not lying adjacent to other second patterns without any one of the first patterns interposed, the plurality of second patterns being disposed separated by a blank space from the plurality of first patterns respectively in the base plane;

extracting the first patterns or the second patterns to make the mask patterns.

16. The method according to claim 15 , wherein

a first exclusive region is provided around each of the first patterns, drawing other first pattern being forbidden in the first exclusive region, and

a second exclusive region is provided around each of the second patterns, drawing other second pattern being forbidden in the second exclusive region, wherein

a third exclusive region is assigned at a space where the first exclusive region overlaps the second exclusive region; and

drawing anyone of the first patterns and the second patterns is forbidden in the third exclusive region.

17. The method according to claim 16 , further comprising:

drawing a third pattern on the first exclusive region so that the third pattern is separated from the each of the first pattern by a blank space;

drawing a fourth pattern on the second exclusive region so that the fourth pattern is separated from the each of the second pattern by a blank space: and

expanding the third pattern or the fourth pattern over a open space of the base plane, none of the first patterns, the second patterns, the first exclusive region, the second exclusive region and the third exclusive region being disposed on the open space, wherein

the third pattern is extracted with the second patterns; and

the fourth pattern is extracted with the first patterns.

18. The method according to claim 17 , further comprising:

extending the first patterns or the second patterns over the third exclusive region so that the first patterns are separated by the blank space from the second patterns.

19. The method according to claim 17 , further comprising:

extracting the third pattern, the forth pattern and the third exclusive region to make a trimming mask pattern.

20. A design method of mask patterns, the method comprising:

providing a base pattern including a plurality of first dot patterns and a plurality of second dot patterns, the base pattern including first rows, first columns, second rows and second columns, the first rows and the second rows being alternately arranged in a first direction, and the first columns and the second columns being alternately arranged in a second direction orthogonal to the first direction, wherein

the plurality of first dot patterns are disposed at cross points of the first rows and the first columns, respectively, the first rows each including first dot patterns aligned in the second direction, and the first columns each including first dot patterns aligned in the first direction, and

the plurality of second dot patterns are disposed at cross points of the second rows and the second columns, respectively, the second rows each including second dot patterns aligned in the second direction, and the second columns each including second dot patterns aligned in the first direction;

providing a plurality of first patterns each connecting two adjacent first dot patterns of the plurality of first dot patterns without overlapping any one of the plurality of second dot patterns;

providing a plurality of second patterns each connecting two adjacent second dot patterns of the plurality of second dot patterns without overlapping any one of the plurality of first dot patterns and the plurality of first patterns; and

extracting a first group of the plurality of first dot patterns and the plurality of first patterns or a second group of the plurality of second dot patterns and the plurality of second patterns to make the mask pattern.

21. A design method of mask patterns, the method comprising:

providing a base pattern including a plurality of first dot patterns to a plurality of P-th dot patterns (P=2 n−1 +1, “n” is integer larger than 2), the base pattern including first rows to P-th rows and first columns to P-th columns,

the first rows and the P-th rows being alternately arranged in a first direction, and the first columns and the P-th columns being alternately arranged in a second direction orthogonal to the first direction, wherein

the plurality of first dot patterns are disposed at cross points of the first rows and the first columns, respectively, the first rows each including first dot patterns aligned in the second direction, and the first columns each including first dot patterns aligned in the first direction, and

the plurality of P-th dot patterns are disposed at cross points of the P-th rows and the P-th columns, respectively, the P-throws each including P-th dot patterns aligned in the second direction, and the P-th columns each including P-th dot patterns aligned in the first direction, and

m-th rows (“m” is integer and 1<m<P) each being positioned between (m−1)-th rows and P-th rows in the first direction, and m-th columns each being positioned between (m−1)-th columns and P-th columns in the second direction, wherein the plurality of m-th dot patterns are disposed at cross points of the m-th rows and the m-th columns, respectively, the m-th rows each including m-th dot patterns aligned in the second direction, and the m-th columns each including m-th dot patterns aligned in the first direction; and

providing first patterns, m-th patterns and P-th patterns on the base pattern, wherein

the first patterns each connect two adjacent first dot patterns without overlapping any one of the second to the P-th dot patterns and the second to the P-th patterns;

the m-th patterns each connect two adjacent m-th dot patterns without overlapping any one of the first to (m−1)-th dot patterns, the (m+1)-th to P-th dot patterns, the first to (m−1)-th patterns and the (m+1)-th to P-th patterns; and

the P-th patterns each connect two adjacent P-th dot patterns without overlapping any one of the first to (P−1)-th dot patterns and the first to (P−1)-th patterns.