IP Library › Granted Patent US 9,978,442
Granted Patent B2
US 9,978,442 · App. 15/258,964 · Granted May 22, 2018

Lower power high speed decoding based dynamic tracking for memories

Inventors: Bin Liang (San Diego, CA); Tony Chung Yiu Kwok (Irvine, CA); Rui Li (San Diego, CA); Sei Seung Yoon (San Diego, CA)
Assignee: QUALCOMM Incorporated
G11C11/418G11C11/419G11C7/1072G11C13/0061
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Quick Facts
Patent No.
US 9,978,442
App. No.
15/258,964
Granted
May 22, 2018
Kind
B2
Abstract

A memory is disclosed. The memory includes a memory array having a plurality of memory cells. The memory also includes an address decoder configured to assert a wordline to enable the memory cells. Additionally, the memory includes a tracking circuit configured to vary a duration of asserting the wordline as a function of which one of the memory cells is accessed. A method is also disclosed. The method includes asserting a wordline to enable the memory cells and varying a duration of asserting the wordline as a function of which one of a plurality of memory cells is accessed.

Claims (24)

1. A memory, comprising:

a memory array having a plurality of memory cells;

an address decoder configured to assert a wordline to enable the memory cells; and

a tracking circuit configured to vary a duration of asserting the wordline as a function of a path length to a memory cell in a row of memory cells of the plurality of memory cells that is accessed, the tracking circuit comprises a variable delay circuit configured to vary a delay of a tracking signal as a function of said memory cell of the plurality of memory cells being accessed, and wherein the tracking circuit is further configured to vary the duration of asserting the wordline as a function of the delayed tracking signal, and the variable delay circuit comprises a transmission line configured to receive the tracking signal, a plurality of dummy loads spaced apart along the transmission line, and a bypass circuit configured to output the delayed tracking signal, the bypass circuit being switchable to bypass one or more of the plurality of dummy loads as a function of said memory cell of the plurality of memory cells accessed.

2. The memory of claim 1 , wherein each dummy load of the plurality of dummy loads comprises a transistor.

3. The memory of claim 1 , wherein the bypass circuit comprises a plurality of bypass switches, each bypass switch of the plurality of bypass switches being configured to bypass a different number of dummy loads, and wherein the bypass switches bypassed the dummy loads as a function of said memory cell of the plurality of memory cells selected.

4. The memory of claim 3 , wherein the bypass circuit further comprises a plurality of logic circuits, each logic circuit of the plurality of logic circuits being coupled in series with a corresponding bypass switch of the plurality of bypass switches.

5. An address decoder, comprising:

a wordline assertion circuit configured to assert a wordline to enable a plurality of memory cells; and

a tracking circuit, coupled to the wordline assertion circuit and configured to vary a duration of asserting the wordline as a function of a path length to a memory cell in a row of memory cells of the plurality of memory cells that is accessed, tracking circuit comprising a variable delay circuit configured to vary a delay of a tracking signal as a function of said memory cell of the plurality of memory cells is accessed, and wherein the tracking circuit is further configured to vary the duration of asserting the wordline as a function of the delayed tracking signal, the variable delay circuit comprising a transmission line configured to receive the tracking signal, a plurality of dummy loads spaced apart along the transmission line, and a bypass circuit configured to output the delayed tracking signal, the bypass circuit being switchable to bypass one or more of the plurality of dummy loads as a function of said memory cell of the plurality of memory cells accessed.

6. The address decoder of claim 5 , wherein each dummy load of the plurality of dummy loads comprises a transistor.

7. The address decoder of claim 5 , wherein the bypass circuit comprises a plurality of bypass switches, each bypass switch of the plurality of bypass switches being configured to bypass a different number of dummy loads, and wherein the bypass switches bypassed the dummy loads as a function of said memory cell of the plurality of memory cells selected.

8. The address decoder of claim 7 , wherein the bypass circuit further comprises a plurality of logic circuits, each logic circuit of the plurality of logic circuits being coupled in series with a corresponding bypass switch of the plurality of bypass switches.

9. A processing system, comprising:

at least one processor;

a memory array coupled to the at least one processor, the memory array having a plurality of memory cells;

an address decoder configured to assert a wordline to enable the memory cells; and

a tracking circuit configured to vary a duration of asserting the wordline as a function of a path length to a memory cell in a row of memory cells of the plurality of memory cells that is accessed, the tracking circuit comprising a variable delay circuit configured to vary a delay of a tracking signal as a function of said memory cell of the plurality of memory cells being accessed, and wherein the tracking circuit is further configured to vary the duration of asserting the wordline as a function of the delayed tracking signal, the variable delay circuit comprising a transmission line configured to receive the tracking signal, a plurality of dummy loads spaced apart along the transmission line, and a bypass circuit configured to output the delayed tracking signal, the bypass circuit being switchable to bypass one or more of the plurality of dummy loads as a function of said memory cell of the plurality of memory cells accessed.

10. The processing system of claim 9 , wherein each dummy load of the plurality of dummy loads comprises a transistor.

11. The processing system of claim 9 , wherein the bypass circuit comprises a plurality of bypass switches, each bypass switch of the plurality of bypass switches being configured to bypass a different number of dummy loads, and wherein the bypass switches bypassed the dummy loads as a function of said memory cell of the plurality of memory cells selected.

12. The processing system of claim 11 , wherein the bypass circuit further comprises a plurality of logic circuits, each logic circuit of the plurality of logic circuits being coupled in series with a corresponding bypass switch of the plurality of bypass switches.

13. A method to use a memory, comprising:

asserting a wordline to enable a plurality of memory cells in a row of memory cells within the memory, the memory including a tracking circuit comprising a variable delay circuit, the variable delay circuit including a transmission line; and

varying a duration of asserting the wordline as a function of a path length to a memory cell in a row of memory cells of the plurality of memory cells that is accessed, wherein varying the duration of the asserted wordline comprises varying the duration of asserting the wordline as a function of a delayed tracking signal and receiving the delayed tracking signal from a plurality of dummy loads spaced apart along the transmission line and outputting the delayed tracking signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2017
From: LIANG, BIN; KWOK, TONY CHUNG YIU; LI, RUI; YOON, SEI SEUNG
To: QUALCOMM INCORPORATED
Reel/Frame 041061/0249 →
Continuity (1)
Related Publication 20180068714A1 · Mar 8, 2018