Semiconductor package device and manufacturing method thereof

1. A method of manufacturing a semiconductor device, comprising:

providing a die;

forming a pad on the die;

disposing a first polymer over the die;

patterning the first polymer with a first opening over the pad;

disposing a sacrificial layer over the first polymer;

disposing a molding surrounding the die;

removing a portion of the molding thereby exposing the sacrificial layer;

removing the sacrificial layer thereby exposing the pad and the first polymer, wherein a top surface of the first polymer is substantially in a same level as a top surface of the molding;

disposing a second polymer on the first polymer;

patterning the second polymer with a second opening disposed over the first opening and the pad; and

disposing a conductive material on the pad within the first opening and the second opening.

2. The method of claim 1 , wherein the first polymer is surrounded by the molding.

3. The method of claim 1 , wherein a portion of the pad is exposed from the first polymer.

4. The method of claim 1 , wherein the first opening is disposed between the sacrificial layer and the pad.

5. The method of claim 1 , wherein the sacrificial layer includes a polymeric material.

6. The method of claim 1 , wherein the molding is disposed over the sacrificial layer.

7. The method of claim 1 , wherein the patterning the first polymer is performed by photolithography and etching operations.

8. The method of claim 1 , wherein the removing the sacrificial layer is performed by etching operations.

9. The method of claim 1 , wherein the removing the portion of the molding is performed by etching or grinding operations.

10. The method of claim 1 , wherein the molding is cured after the disposing of the molding.

11. A method of manufacturing a semiconductor device, comprising:

providing a die including a pad disposed over the die;

disposing a patterned first polymer over the die;

disposing a sacrificial layer over the patterned first polymer;

disposing a molding around the die, the patterned first polymer and the sacrificial layer; and

removing the sacrificial layer and a portion of the molding,

wherein the patterned first polymer and a portion of the pad are exposed from the molding, and a top surface of the patterned first polymer is substantially in a same level as a top surface of the molding.

12. The method of claim 11 , wherein the patterned first polymer includes an opening disposed over the portion of the pad.

13. The method of claim 11 , further comprising forming a redistribution layer (RDL) over the molding and the die.

14. The method of claim 11 , wherein the sacrificial layer includes epoxy, polyimide, polybenzoxazole (PBO) or solder resist.

15. A method of manufacturing a semiconductor device, comprising:

providing a carrier;

providing a die including a pad disposed over the die, a patterned first polymer disposed over the pad, and a sacrificial layer disposed over the patterned first polymer;

disposing the die over the carrier;

forming a molding to surround the die;

removing the sacrificial layer, wherein a top surface of the patterned first polymer is substantially in a same level as a top surface of the molding;

disposing a patterned second polymer over the patterned first polymer and the molding; and

disposing a conductive material over the pad and the patterned second polymer.

16. The method of claim 15 , wherein the carrier is removable from the die and the molding.

17. The method of claim 15 , further comprising disposing a conductive bump over the conductive material.

18. The method of claim 15 , wherein the patterned second polymer includes an opening filled by the conductive material.

19. The method of claim 15 , further comprising forming an under bump metallization (UBM) over the conductive material.