Semiconductor laser device
Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11 , a cap 12 that is attached to an upper surface of the stem 11 , a semiconductor laser element 13 , and a power-feeding member 14 that is at least partially buried in the stem 11 . The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13 , and an external terminal 33 . The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11 , and an attaching surface 11 b that is attached to a mounting object is provided in a lower surface of the stem 11.
1. A semiconductor laser device mounted on a mounting object, comprising:
a stem;
a cap that has a translucent member and is attached to an upper surface of the stem to form an accommodation space between the cap and the stem;
a semiconductor laser element that is disposed in the accommodation space and emits laser light; and
a power-feeding member that is at least partially buried in the stem and is electrically conducted with the semiconductor laser element,
wherein the power-feeding member has an element-side terminal that is exposed to the accommodation space and is electrically connected to the semiconductor laser element, and an external terminal connected to an external power source,
wherein the external terminal of the power-feeding member is exposed on a side surface or an upper surface of the stem, and an attaching surface to be attached to the mounting object is provided on a lower surface of the stem, and
wherein an intermediated portion of the power-feeding member is buried in the stem and is bent.
2. The semiconductor laser device according to claim 1 , wherein a recessed portion is provided on the side surface of the stem, and the external terminal is exposed to the recessed portion.
3. The semiconductor laser device according to claim 1 , wherein a plurality of the power-feeding members are provided, and the external terminal of at least one thereof is exposed on the side surface of the stem at a position different from the other external terminals, as seen from above.
4. The semiconductor laser device according to claim 1 , wherein the semiconductor laser element is provided on a heat sink fixed to the upper surface of the stem, and
an auxiliary conductor having one end connected to the heat sink and the other end exposed on the side surface of the stem is buried in the stem.
5. The semiconductor laser device according to claim 1 , wherein a positioning portion for positioning the stem on the mounting object is provided in at least one of the side surface and the lower surface of the stem.
6. The semiconductor laser device according to claim 5 , wherein the external terminal is located in the positioning portion.
7. The semiconductor laser device according to claim 1 , wherein the power-feeding member has a heat dissipation portion extending along the attaching surface of the stem.
8. The semiconductor laser device according to claim 7 , wherein a portion of the power-feeding member buried in the stem and the external terminal extend in the same linear shape.