Deposition of metal films using beta-hydrogen free precursors
Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR 3 ) 2 , M(XR 3 ) 3 , M(XR 3 ) 4 , M(XR 3 ) 5 and M(XR 3 ) 6 , where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.
1. A method of depositing a film, the method comprising:
exposing at least a portion of a substrate surface to a first precursor comprising a compound having the general structure
where M is a metal, each X is independently C, Si or Ge with the proviso that at least one X is Ge and each R is not H; and
exposing at least a portion of the substrate surface to a reactant to deposit a metal-containing film on the substrate surface.
2. The method of claim 1 , wherein M is Al.
3. The method of claim 1 , wherein at least one X is Si.
4. The method of claim 1 , wherein each R is independently an alkyl.
5. The method of claim 1 , wherein exposing the substrate surface to the first precursor and the reactant occurs sequentially.
6. The method of claim 1 , wherein exposing the substrate surface to the first precursor and the reactant occurs simultaneously.
7. The method of claim 1 , wherein the reactant comprises a metal halide.
8. The method of claim 1 , wherein the metal-containing film consists essentially of a substantially pure metal.
9. The method of claim 1 , wherein the metal-containing film consists essentially of a substantially pure metal alloy.
10. The method of claim 1 , wherein the metal-containing film comprises a metal nitride.
11. The method of claim 1 , wherein the metal-containing film comprises a metal oxide.
12. A method of depositing a film, the method comprising exposing at least a portion of a substrate surface to a first precursor and a reactant, one or more of the first precursor and the reactant comprising a compound having the general structure
where M is Al, each X is independently C, Si or Ge with the proviso that at least one X is Ge, each R is independently an alkyl group, and the compound comprises substantially no β-H.
13. The method of claim 12 , wherein the film consists essentially of substantially pure aluminum.
14. The method of claim 12 , wherein the film consists essentially of substantially pure aluminum alloy.
15. The method of claim 12 , wherein the reactant comprises the compound with the general structure and the film comprises substantially no aluminum.
16. The method of claim 12 , wherein the first precursor and the reactant are sequentially exposed to the substrate surface.
17. The method of claim 12 , wherein the first precursor and the reactant are exposed to the substrate surface at the same time.
18. The method of claim 12 , further comprising exposing the substrate surface to a second precursor during, before or after exposure to the first precursor and/or reactant.