Method for producing SiC single crystal
View Patent ↗Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the Si—C solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature.
1. A method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method for producing a SiC single crystal comprising the steps of:
before step (A), measuring the liquid surface height of the Si—C solution as the temperature of the Si—C solution is changed from a first temperature to a second temperature,
(A) bringing the temperature of the Si—C solution to the first temperature,
(B) contacting the seed crystal substrate held on the seed crystal holding shaft with the Si—C solution,
(C) bringing the temperature of the Si—C solution to the second temperature after the contacting the seed crystal substrate with the Si—C solution, and
(D) moving the seed crystal substrate held on the seed crystal holding shaft in the vertical direction according to the change in liquid surface height of the Si—C solution that has been determined before step (A) when the temperature of the Si—C solution is brought from the first temperature to the second temperature, wherein
the first temperature is lower than the second temperature, and
the temperature difference between the first temperature and the second temperature is at least 100° C.
2. The method according to claim 1 , wherein step (C) includes performing meltback of the seed crystal substrate.
3. The method according to claim 1 , wherein the SiC single crystal is grown at the second temperature.
4. The method according to claim 2 , wherein the SiC single crystal is grown at the second temperature.
5. The method according to claim 3 , wherein the method comprises growing the SiC single crystal while forming a meniscus.
6. The method according to claim 4 , wherein the method comprises growing the SiC single crystal while forming a meniscus.
7. The method according to claim 2 , wherein the temperature is raised from the first temperature to the second temperature at a temperature-elevating rate of from 1° C./min to 20° C./min.
8. The method according to claim 2 , wherein the temperature is raised from the first temperature to the second temperature at a temperature-elevating rate of from 3° C./min to 15° C./min.