Bonding structure for semiconductor package and method of manufacturing the same

1. A method of manufacturing a bonding structure, comprising:

(a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, the at least one bonding pad having a sloped surface with a first slope;

(b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and the at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope, and the at least one pillar further has a top surface and an edge portion defined by the sidewall of the pillar and the top surface of the pillar; and

(c) bonding the at least one pillar to a portion of the sloped surface of the at least one bonding pad, wherein bonding the at least one pillar comprises pressing the at least one pillar against the sloped surface of the at least one bonding pad and carrying out a metal fusion bonding or a metal eutectic bonding between the edge portion of the at least one pillar and the sloped surface of the at least one bonding pad.

2. The method of claim 1 , wherein in (a), a space defined by the sloped surface of the at least one bonding pad has a maximum width and a minimum width, and in (b), a width of the at least one pillar is greater than the minimum width of the space and less than the maximum width of the space.

3. The method of claim 1 , wherein in (c), a gap is formed between the sidewall of the at least one pillar and the sloped surface of the at least one bonding pad.

4. The method of claim 1 , wherein (c) further comprises:

moving the at least one pillar to the sloped surface of the at least one bonding pad so as to form a line contact or a point contact between the edge portion of the at least one pillar and the sloped surface of the at least one bonding pad.

5. The method of claim 1 , wherein in (c), the bonding is carried out at a temperature in a range from 60° C. to 160° C.

6. The method of claim 1 , wherein in (a), the substrate further comprises a first insulation layer disposed on the top surface thereof; in (b), the semiconductor element further comprises a second insulation layer; and in (c), the first insulation layer contacts the second insulation layer.

7. A method of manufacturing a bonding structure, comprising:

(a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, the at least one bonding pad having a sloped surface;

(b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar having a sidewall, a top surface and an edge portion defined by the sidewall of the pillar and the top surface of the pillar; and

(c) bonding the at least one pillar to a portion of the sloped surface of the at least one bonding pad, wherein bonding the at least one pillar comprises pressing the at least one pillar against the sloped surface of the at least one bonding pad and carrying out a metal fusion bonding or a metal eutectic bonding between the edge portion of the at least one pillar and the sloped surface of the at least one bonding pad.

8. The method of claim 7 , wherein in (a), the substrate further comprises a first insulation layer disposed on the top surface thereof.

9. The method of claim 8 , wherein in (b), the semiconductor element further comprises a second insulation layer.

10. The method of claim 9 , wherein in (c), the first insulation layer contacts the second insulation layer.

11. The method of claim 7 , wherein in (c), a gap is formed between the sidewall of the at least one pillar and the sloped surface of the at least one bonding pad.

12. The method of claim 7 , wherein (c) further comprises:

moving the at least one pillar to the sloped surface of the at least one bonding pad so as to form a line contact or a point contact between the edge portion of the at least one pillar and the sloped surface of the at least one bonding pad.

13. A method of manufacturing a bonding structure, comprising:

providing a substrate;

disposing at least one bonding pad adjacent to a top surface of the substrate, wherein the at least one bonding pad has a sloped surface;

providing a semiconductor element including at least one pillar, wherein the pillar has a sidewall, a top surface and an edge portion defined by the sidewall of the pillar and the top surface of the pillar; and

bonding the at least one pillar to the at least one bonding pad, leaving a gap between the sidewall and the sloped surface, wherein bonding the at least one pillar comprises pressing the at least one pillar against the sloped surface of the at least one bonding pad and carrying out a metal fusion bonding or a metal eutectic bonding between the edge portion of the at least one pillar and the sloped surface of the at least one bonding pad.

14. The method of claim 13 , further comprising disposing a first insulation layer on the substrate.

15. The method of claim 14 , further comprising disposing a second insulation layer on the semiconductor element and between the bonding pads, wherein the second insulation layer contacts the first insulation layer.

16. The method of claim 13 , wherein bonding the at least one pillar to the at least one bonding pad further comprises:

moving the at least one pillar to the sloped surface of the at least one bonding pad so as to form a line contact or a point contact between the at least one pillar and the at least one bonding pad.

17. The method of claim 13 , wherein the sloped surface of the at least one bonding pad defines an opening having a maximum width and a minimum width, and a width of the at least one of the at least one pillar is greater than the minimum width of the opening and less than the maximum width of the opening.

18. The method of claim 13 , wherein the bonding is carried out at a temperature in a range from 60° C. to 160° C.