Selectively degrading current resistance of field effect transistor devices
A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.
1. A method comprising:
selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET, the second finFET being electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.
2. The method of claim 1 , wherein the first finFET is a p-type field-effect transistor (fin-PFET) and the second finFET is an n-type field-effect transistor (fin-NFET).
3. The method of claim 2 , wherein the circuit includes a first fin-PFET configured to be used in a static random-access memory (SRAM) circuit and a second fin-PFET configured to be used in a logic circuit, and
only the first fin-PFET is degraded among the first and second fin-PFETs.
4. The method of claim 2 , wherein the circuit includes a plurality of fin-PFETs and a plurality of fin-NFETs, and
selectively degrading the current capacity of the first finFET comprises:
epitaxially growing a same material on the fins of each of the fin-NFETs; and
epitaxially growing a different material on the first finFET than on each fin-PFET that is not to be degraded.
5. The method of claim 4 , wherein the different material epitaxially grown on the first finFET is non-doped silicon.
6. The method of claim 4 , wherein the material epitaxially grown on each of the fin-PFETs that is not to be degraded is boron-doped silicon germanium.
7. The method of claim 4 , wherein the material epitaxially grown on each of the fin-NFETs is silicon phosphorus.
8. The method of claim 4 , wherein selectively degrading the current capacity of the first fin-PFET comprises:
degrading the current capacity of the first fin-PFET by masking each finFET except the first fin-PFET, etching an insulation layer from a fin of the first fin-PFET, and epitaxially growing non-doped silicon on the fin of the first fin-PFET;
forming each fin-PFET that is not to be degraded by masking each finFET except the fin-PFETs that are not to be degraded, etching an insulation layer from fins of the fin-PFETs that are not to be degraded, and epitaxially growing a material for decreasing a current resistance between the fins and a contact on the fins of the fin-PFETs that are not to be degraded; and
forming each fin-NFET by masking each fin-PFET, etching an insulation layer from fins of each fin-NFET, and epitaxially growing a material for decreasing a current resistance between the fins of the fin-NFETs and contacts on the fins of the fin-NFETs.
9. The method of claim 1 , wherein the first finFET has a first channel charge type, and the second finFET has the first channel charge type.
10. The method of claim 9 , wherein the second finFET has a material formed on a fin of the second finFET to increase a current resistance of the second finFET relative to the first finFET.
11. The method of claim 10 , wherein the first finFET and the second finFET are part of a same static random access memory (SRAM) cell.
12. The method of claim 9 , wherein the first finFET is located in a logic circuit, and the second finFET is located in an SRAM circuit.
13. The method of claim 1 , wherein the first finFET is a PFET.
14. The method of claim 1 , wherein the second finFET is an NFET.
15. The method of claim 1 , wherein the first finFET is a PFET and the second finFET is a PFET.