IP Library › Granted Patent US 9,985,052
Granted Patent B2
US 9,985,052 · App. 15/792,031 · Granted May 29, 2018

Light-emitting device

Inventor: Makoto Kaneyasu (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1225G09G3/3233H01L29/7869H01L29/78696G09G2300/0819G09G2300/0842G09G2310/0262G09G2320/045
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Quick Facts
Patent No.
US 9,985,052
App. No.
15/792,031
Granted
May 29, 2018
Kind
B2
Abstract

To provide a light-emitting device capable of suppressing the display of an afterimage. A plurality of pixels arranged in n rows and m columns (n and m are each an integer of 2 or more) is supplied with a first signal containing image data and a second signal for initializing the pixels. Each pixel includes a first transistor for controlling the input of the first signal and a second transistor for controlling the input of the second signal. The first transistor in a k-th row (k is an integer of 1 to n) and the second transistor in a k+1-th row are turned on at the same time, so that the pixels are initialized and display images effectively.

Claims (64)

1. A light-emitting device comprising:

a first transistor;

a second transistor;

a third transistor, a gate of the third transistor electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor, a gate of the sixth transistor electrically connected to one of a source and a drain of the fourth transistor and one of a source and a drain of the fifth transistor;

a first capacitor, a first terminal of the first capacitor electrically connected to the gate of the third transistor and a second terminal of the first capacitor electrically connected to one of a source and a drain of the third transistor;

a second capacitor, a first terminal of the second capacitor electrically connected to the gate of the sixth transistor and a second terminal of the second capacitor electrically connected to one of a source and a drain of the sixth transistor;

a first light-emitting element, a first terminal of the first light-emitting element electrically connected to the one of the source and the drain of the third transistor;

a second light-emitting element, a first terminal of the second light-emitting element electrically connected to the one of the source and the drain of the sixth transistor;

a first wiring electrically connected to a gate of the second transistor;

a second wiring electrically connected to a gate of the first transistor and a gate of the fifth transistor;

a third wiring electrically connected to a gate of the fourth transistor; and

a fourth wiring electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the fourth transistor.

2. The light-emitting device according to claim 1 ,

wherein the other of the source and the drain of the third transistor is supplied with a first potential,

wherein a second terminal of the first light-emitting element is supplied with a second potential,

wherein the other of the source and the drain of the sixth transistor is supplied with the first potential,

wherein a second terminal of the second light-emitting element is supplied with the second potential, and

wherein the fourth wiring is supplied with a signal containing image data.

3. The light-emitting device according to claim 1 ,

wherein the gate of the third transistor is directly connected to the one of the source and the drain of the first transistor and the one of the source and the drain of the second transistor,

wherein the first terminal of the first light-emitting element is directly connected to the one of the source and the drain of the third transistor,

wherein the gate of the sixth transistor is directly connected to the one of the source and the drain of the fourth transistor and the one of the source and the drain of the fifth transistor,

wherein the first terminal of the second light-emitting element is directly connected to the one of the source and the drain of the sixth transistor, and

wherein the second wiring is directly connected to the gate of the first transistor and the gate of the fifth transistor.

4. The light-emitting device according to claim 1 , wherein each of the first to the sixth transistors contains an oxide semiconductor in a channel formation region.

5. The light-emitting device according to claim 4 ,

wherein the oxide semiconductor contains indium, zinc, and M, and

wherein M is gallium, tin, hafnium, aluminum, or zirconium.

6. An electronic device comprising the light-emitting device according to claim 1 , a microphone, and an operation key.

7. A light-emitting device comprising:

a first transistor;

a second transistor;

a third transistor, a gate of the third transistor electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor, a gate of the sixth transistor electrically connected to one of a source and a drain of the fourth transistor and one of a source and a drain of the fifth transistor;

a first capacitor, a first terminal of the first capacitor electrically connected to the gate of the third transistor and a second terminal of the first capacitor electrically connected to the other of the source and the drain of the second transistor and one of a source and a drain of the third transistor;

a second capacitor, a first terminal of the second capacitor electrically connected to the gate of the sixth transistor and a second terminal of the second capacitor electrically connected to the other of the source and the drain of the fifth transistor and one of a source and a drain of the sixth transistor;

a first light-emitting element, a first terminal of the first light-emitting element electrically connected to the one of the source and the drain of the third transistor;

a second light-emitting element, a first terminal of the second light-emitting element electrically connected to the one of the source and the drain of the sixth transistor;

a first wiring electrically connected to a gate of the second transistor;

a second wiring electrically connected to a gate of the first transistor and a gate of the fifth transistor;

a third wiring electrically connected to a gate of the fourth transistor; and

a fourth wiring electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the fourth transistor.

8. The light-emitting device according to claim 7 ,

wherein the other of the source and the drain of the third transistor is supplied with a first potential,

wherein a second terminal of the first light-emitting element is supplied with a second potential,

wherein the other of the source and the drain of the sixth transistor is supplied with the first potential,

wherein a second terminal of the second light-emitting element is supplied with the second potential, and

wherein the fourth wiring is supplied with a signal containing image data.

9. The light-emitting device according to claim 7 ,

wherein the gate of the third transistor is directly connected to the one of the source and the drain of the first transistor and the one of the source and the drain of the second transistor,

wherein the first terminal of the first light-emitting element is directly connected to the one of the source and the drain of the third transistor,

wherein the gate of the sixth transistor is directly connected to the one of the source and the drain of the fourth transistor and the one of the source and the drain of the fifth transistor,

wherein the first terminal of the second light-emitting element is directly connected to the one of the source and the drain of the sixth transistor, and

wherein the second wiring is directly connected to the gate of the first transistor and the gate of the fifth transistor.

10. The light-emitting device according to claim 7 , wherein each of the first to the sixth transistors contains an oxide semiconductor in a channel formation region.

11. The light-emitting device according to claim 10 ,

wherein the oxide semiconductor contains indium, zinc, and M, and

wherein M is gallium, tin, hafnium, aluminum, or zirconium.

12. An electronic device comprising the light-emitting device according to claim 7 , a microphone, and an operation key.

Continuity (2)
Division 14562098 · Dec 5, 2014
Related Publication 20180047758A1 · Feb 15, 2018