Optoelectronic semiconductor component
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.
1. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting said top area and said bottom area;
electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and
an electrically insulating shaped body, wherein
the optoelectronic semiconductor chip is a flip-chip having said electrical contract locations only at one side, either the underside or the top side,
the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and
the shaped body is free of any conductive element that electrically connects the optoelectronic semiconductor chip.
2. The optoelectronic semiconductor component according to claim 1 , wherein the electrical contact locations of the optoelectronic semiconductor chip are freely accessible and the optoelectronic semiconductor component is electrically contactable via the electrical contact locations of the optoelectronic semiconductor chip.
3. The optoelectronic semiconductor component according to claim 1 , wherein the shaped body is reflective for electromagnetic radiation produced during operation of the optoelectronic semiconductor chip.
4. The optoelectronic semiconductor component according to claim 1 , wherein the shaped body comprises side surface facing away from the side areas of the optoelectronic semiconductor chip, and the side surfaces comprise grooves.
5. The optoelectronic semiconductor component according to claim 1 , further comprising a phosphor layer comprising phosphor particles, wherein the phosphor layer covers the shaped body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and reemit electro-magnetic radiation in a different wavelength range than the optoelectronic semiconductor chip.
6. The optoelectronic semiconductor component according to claim 5 , wherein the phosphor layer covers the whole surface of the optoelectronic semiconductor chip and of the shaped body at sides of the optoelectronic semiconductor chip and the shaped body facing away from the electrical contact locations.
7. The optoelectronic semiconductor component according to claim 6 , wherein the phosphor layer directly contacts the optoelectronic semiconductor chip and the shaped body.
8. The optoelectronic semiconductor component according to claim 5 , wherein the phosphor layer is a ceramic lamina comprising a ceramic phosphor.
9. The optoelectronic semiconductor component according to claim 5 , wherein the phosphor layer comprises a matrix material into which phosphor particles are introduced.
10. The optoelectronic semiconductor component according to claim 5 , wherein the shaped body comprises a first matrix material into which particles that reflect electromagnetic radiation are introduced, the phosphor layer comprises a second matrix material into which phosphor particles are introduced, and the first and the second matrix material are the same.
11. The optoelectronic semiconductor component according to claim 1 , wherein the top area and the bottom area of the optoelectronic semiconductor chip are completely free of the shaped body.
12. The optoelectronic semiconductor component according to claim 1 , wherein the shaped body does not project beyond the optoelectronic semiconductor chip in a vertical direction that runs along the side areas of the optoelectronic semiconductor chip.
13. The optoelectronic semiconductor component according to claim 1 , wherein the shaped body covers the side areas of the semiconductor chip up to a selected height such that the side areas of the semiconductor chip are free of the shaped body in places or the surface at the top side and the surface at the underside of the shaped body terminates flush with the top area and bottom area of the semiconductor chip, respectively.
14. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting said top area and said bottom area;
electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip;
an electrically insulating shaped body; and
a phosphor layer comprising phosphor particles, wherein the phosphor layer covers the shaped body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and reemit electro-magnetic radiation in a different wavelength range than the optoelectronic semiconductor chip,
wherein
the optoelectronic semiconductor chip is a flip-chip having said electrical contract locations only at one side, either the underside or the top side,
the shaped body surrounds the optoelectronic semiconductor chip at its side areas,
the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip, and
the phosphor layer comprises side surfaces, the shaped body comprises side surfaces facing away from the side areas of the optoelectronic semiconductor chip, and at least one side surface of the phosphor layer terminates flush with at least one side area of the shaped body.