Three-dimensional silicon structure for integrated circuits and cooling thereof
Embodiments of a three-dimensional silicon structure for integrated circuits and cooling thereof are described. In one aspect, a device includes a silicon substrate having a first primary side and a second primary side opposite the first primary side. The first primary side includes a circuit structure disposed thereon. The second primary side includes a plurality of fins monolithically formed thereon.
1. An apparatus, comprising:
a first semiconductor device, comprising:
a one-piece first silicon substrate having a first primary side and a second primary side opposite the first primary side, the first primary side of the first silicon substrate including a first circuit structure thereon, the second primary side of the first silicon substrate including a plurality of fins monolithically formed thereon that define a plurality of first grooves, at least some of the first grooves filled with a first phase-change material; and
a sheet disposed on the fins on the second primary side of the first silicon substrate of the first semiconductor device such that the first phase-change material is sealed within the at least some of the first grooves by the first silicon structure and the sheet,
wherein the first primary side is electrically connected to the second primary side through one or more of the fins.
2. The apparatus of claim 1 , wherein a portion of at least the first circuit structure is configured to function as a memory unit, a central processing unit, a graphics processing unit, a navigation unit, a communication unit, or a radio frequency unit.
3. The apparatus of claim 1 , wherein at least the first circuit structure comprises one or more electrical traces or a semiconductor structure of an integrated circuit.
4. The apparatus of claim 1 , further comprising:
a second semiconductor device, comprising:
a second silicon substrate having a first primary side and a second primary side opposite the first primary side, the first primary side of the second silicon substrate including a second circuit structure disposed thereon, the second primary side of the second silicon substrate including a plurality of second grooves thereon, at least some of the second grooves filled with a second phase-change material,
wherein the first semiconductor device is stacked on the second semiconductor device with the first primary side of the first silicon substrate facing the second primary side of the second silicon substrate such that the second phase-change material is sealed within the at least some of the second grooves by the second silicon structure and the first silicon structure.
5. The apparatus of claim 4 , wherein the first semiconductor device and the second semiconductor device are bonded by solder bonding or epoxy bonding.
6. The apparatus of claim 4 , wherein at least the first phase-change material or the second phase-change material is electrically non-conductive.
7. The apparatus of claim 4 , wherein at least the first phase-change material or the second phase-change material comprises a salt hydrate, an ionic liquid, paraffin, fatty acid, ester, an organic-organic compound, an organic-inorganic compound, or an inorganic-inorganic compound.
8. The apparatus of claim 4 , further comprising:
a plurality of first vias formed in the first silicon substrate and configured to provide electrical connection to the first circuit structure and to provide electrical connection between the first primary side and the second primary side of the first silicon substrate, the first vias comprising:
a plurality of first through holes connecting the first primary side and the second primary side of the first silicon substrate; and
a first electrically-conductive material filled in the first through holes and in contact with the first circuit structure.
9. The apparatus of claim 8 , wherein at least some of the first vias are formed along at least one peripheral side of the first silicon substrate.
10. The apparatus of claim 8 , further comprising:
a plurality of second vias formed in the second silicon substrate and configured to provide electrical connection to the second circuit structure, the second vias comprising:
a plurality of second through holes connecting the first primary side and the second primary side of the second silicon substrate; and
a second electrically-conductive material filled in the second through holes and in contact with the second circuit structure.
11. The apparatus of claim 10 , wherein at least some of the second vias are formed along at least one peripheral side of the second silicon substrate.
12. The apparatus of claim 10 , wherein at least some of the second vias are aligned with at least some of the first vias.
13. The apparatus of claim 10 , wherein the first electrically-conductive material and the second electrically-conductive material are made of an identical material.
14. The apparatus of claim 4 , further comprising:
a heat dissipation element at least partially sandwiched between the first semiconductor device and the second semiconductor device.
15. The apparatus of claim 14 , wherein the heat dissipation element comprises at least one component made of copper, silver, aluminum, zinc, silicon, ceramic, carbon-fiber, nanowires, or graphite.