Radio-frequency front-end circuit and communication device
A radio-frequency front-end circuit includes a first filter that has a first pass band and is connected to an antenna common terminal, a second filter that has a second pass band and is connected to the antenna common terminal, a switch that includes a common terminal and selection terminals, the common terminal being connected to the first filter, and a third filter that is connected to one of the selection terminals and is disposed between the switch and an input/output terminal. A reflection coefficient of the first filter alone in the second pass band viewed from the antenna common terminal is larger than a reflection coefficient of the third filter alone in the second pass band viewed from the antenna common terminal.
1. A radio-frequency front-end circuit comprising:
an antenna common terminal connected to an antenna element;
a first input/output terminal and a second input/output terminal;
a first filter that includes a first terminal and a second terminal and has a first pass band, the first terminal being connected to the antenna common terminal;
a second filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the second input/output terminal, and has a second pass band different from the first pass band;
a switch that includes a common terminal and a plurality of selection terminals, the common terminal being connected to the second terminal; and
a third filter that is connected to a first selection terminal among the plurality of selection terminals and is disposed between the switch and the first input/output terminal; wherein
a reflection coefficient of the first filter alone in the second pass band viewed from the antenna common terminal is larger than a reflection coefficient of the third filter alone in the second pass band viewed from the antenna common terminal.
2. The radio-frequency front-end circuit according to claim 1 , wherein
each of the first filter and the third filter includes two or more elastic wave resonators; and
a reflection coefficient of one or more elastic wave resonators alone disposed near the antenna common terminal among the two or more elastic wave resonators included in the first filter in the second pass band viewed from the antenna common terminal is larger than a reflection coefficient of one or more elastic wave resonators alone disposed near the antenna common terminal among the two or more elastic wave resonators included in the third filter in the second pass band viewed from the antenna common terminal.
3. The radio-frequency front-end circuit according to claim 1 , wherein
at least one of the first filter and the third filter has a ladder filter structure; and
the one or more elastic wave resonators disposed near the antenna common terminal include at least one of a series-arm resonator and a parallel-arm resonator.
4. The radio-frequency front-end circuit according to claim 1 , wherein at least one of the first filter and the third filter has a longitudinally coupled filter structure.
5. The radio-frequency front-end circuit according to claim 1 , wherein
the second input/output terminal is connected to a second amplifying circuit; and
no filter circuit is disposed between the second filter and the second amplifying circuit.
6. The radio-frequency front-end circuit according to claim 1 , further comprising:
a third input/output terminal; and
a fourth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the third input/output terminal, and has a third pass band; wherein
the first filter, the second filter, and the fourth filter define a triplexer;
the first pass band, the second pass band, and the third pass band are applied to a low band of about 698-960 MHz, a middle band of about 1710-2200 MHz, and a high band of about 2300-2690 MHz; and
the first pass band is any one of the low band, the middle band, and the high band.
7. The radio-frequency front-end circuit according to claim 1 , further comprising:
a third input/output terminal and a fourth input/output terminal;
a fourth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the third input/output terminal, and has a third pass band; and
a fifth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the fourth input/output terminal, and has a fourth pass band; wherein
the first filter, the second filter, the fourth filter, and the fifth filter define a quadplexer;
the first pass band, the second pass band, the third pass band, and the fourth pass band are applied to a low band of about 698-960 MHz, a middle band of about 1710-2200 MHz, a middle high band of about 2300-2400 MHz, and a high band of about 2496-2690 MHz; and
the first pass band is any one of the low band, the middle band, the middle high band, and the high band.
8. The radio-frequency front-end circuit according to claim 1 , further comprising:
a third input/output terminal and a fourth input/output terminal;
a fourth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the third input/output terminal, and has a third pass band; and
a fifth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the fourth input/output terminal, and has a fourth pass band; wherein
the first filter, the second filter, the fourth filter, and the fifth filter define a quadplexer;
the first pass band, the second pass band, the third pass band, and the fourth pass band are applied to a middle low band of about 1475.9-2025 MHz, a middle band of about 2110-2200 MHz, a middle high band of about 2300-2400 MHz or about 2300-2370 MHz, and a high band of about 2496-2690 MHz; and
the first pass band is any one of the middle low band, the middle band, the middle high band, and the high band.
9. The radio-frequency front-end circuit according to claim 5 , further comprising:
a third input/output terminal and a fourth input/output terminal;
a fourth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the third input/output terminal, and has a third pass band; and
a fifth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the fourth input/output terminal, and has a fourth pass band; wherein
the first filter, the second filter, the fourth filter, and the fifth filter define a quadplexer;
the first pass band, the second pass band, the third pass band, and the fourth pass band are applied to a middle low band of about 1475.9-2025 MHz, a middle band of about 2110-2200 MHz, a middle high band of about 2300-2400 MHz or about 2300-2370 MHz, and a high band of about 2496-2690 MHz;
the first pass band is any one of the middle low band, the middle band, and the high band;
the second pass band is the middle high band; and
no filter circuit is disposed on a signal path connecting the second filter and the second amplifying circuit.
10. The radio-frequency front-end circuit according to claim 9 , wherein the signal path connecting the second filter and the second amplifying circuit is a path that performs transmission and reception in Band 40 a having a reception band of 2300-2370 MHz.
11. The radio-frequency front-end circuit according to claim 9 , wherein the signal path connecting the second filter and the second amplifying circuit is a path that performs transmission and reception in Band 40 having a reception band of 2300-2400 MHz.
12. The radio-frequency front-end circuit according to claim 5 , further comprising:
a third input/output terminal and a fourth input/output terminal;
a fourth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the third input/output terminal, and has a third pass band; and
a fifth filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the fourth input/output terminal, and has a fourth pass band; wherein
the first filter, the second filter, the fourth filter, and the fifth filter define a quadplexer;
the first pass band, the second pass band, the third pass band, and the fourth pass band are applied to a middle low band of about 1475.9-2025 MHz, a middle band of about 2110-2200 MHz, a middle high band of about 2300-2400 MHz or about 2300-2370 MHz, and a high band of about 2496-2690 MHz;
the first pass band is any one of the middle low band, the middle band, and the middle high band;
the second pass band is the high band; and
no filter circuit is disposed on a signal path connecting the second filter and the second amplifying circuit.
13. The radio-frequency front-end circuit according to claim 10 , wherein the signal path connecting the second filter and the second amplifying circuit is a path that performs transmission and reception in Band 41 having a reception band of about 2496-2690 MHz.
14. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a high frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
each of the one or more elastic wave resonators included in the first filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate; and
in the first filter, any one of (1) a Rayleigh wave that propagates through the piezoelectric layer composed of LiNbO 3 , (2) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 , and (3) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
15. The radio-frequency front-end circuit according to claim 14 , wherein in the third filter, each of the one or more elastic wave resonators is a solidly mounted resonator (SMR) or a film bulk acoustic resonator (FBAR).
16. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a high frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
each of the one or more elastic wave resonators included in the first filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter, each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) the piezoelectric layer including main surfaces, the IDT electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer; and
in the third filter, each of the one or more elastic wave resonators is a solidly mounted resonator (SMR) or a film bulk acoustic resonator (FBAR).
17. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a low frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators; and
in the first filter, (1) a Rayleigh wave that propagates through a piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (2) each of the one or more elastic wave resonators is a solidly mounted resonator (SMR), or (3) each of the one or more elastic wave resonators is a film bulk acoustic resonator (FBAR).
18. The radio-frequency front-end circuit according to claim 17 , wherein
in the third filter, (1) each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) a piezoelectric layer including main surfaces, an interdigital transducer (IDT) electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, (2) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave, or (3) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
19. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a low frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
each of the one or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter, each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) the piezoelectric layer including main surfaces, the IDT electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer; and
in the third filter, (1) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave or (2) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
20. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a low frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
each of the one or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter, a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave; and
in the third filter, a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
21. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a high frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
in the first filter, (1) a Rayleigh wave that propagates through a piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (2) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave, (3) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (4) each of the one or more elastic wave resonators is a solidly mounted resonator (SMR), or (5) each of the one or more elastic wave resonators is a film bulk acoustic resonator (FBAR); and
in the third filter, each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) a piezoelectric layer including main surfaces, an interdigital transducer (IDT) electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer.
22. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a high frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
in the first filter, (1) a Rayleigh wave that propagates through a piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (2) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (3) each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) a piezoelectric layer including main surfaces, an interdigital transducer (IDT) electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, (4) each of the one or more elastic wave resonators is a solidly mounted resonator (SMR), or (5) each of the one or more elastic wave resonators is a film bulk acoustic resonator (FBAR); and
in the third filter, a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave.
23. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a low frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
in the first filter, (1) each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) a piezoelectric layer including main surfaces, an interdigital transducer (IDT) electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, (2) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave, (3) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (4) each of the one or more elastic wave resonators is a solidly mounted resonator (SMR), or (5) each of the one or more elastic wave resonators is a film bulk acoustic resonator (FBAR); and
in the third filter, a Rayleigh wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
24. The radio-frequency front-end circuit according to claim 1 , wherein
the first pass band is on a low frequency side relative to the second pass band;
each of the first filter and the third filter includes one or more elastic wave resonators;
in the first filter, (1) a Rayleigh wave that propagates through a piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave, (2) each of the one or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) a piezoelectric layer including main surfaces, an interdigital transducer (IDT) electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, (3) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave, (4) each of the one or more elastic wave resonators is a solidly mounted resonator (SMR), or (5) each of the one or more elastic wave resonators is a film bulk acoustic resonator (FBAR); and
in the third filter, a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave.
25. The radio-frequency front-end circuit according to claim 1 , wherein
each of the two or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter and the third filter, a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 is used as a surface acoustic wave; and
a film thickness or a duty ratio is different between the IDT electrode included in the first filter and the IDT electrode included in the third filter.
26. The radio-frequency front-end circuit according to claim 1 , wherein
each of the two or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter and the third filter, each of the two or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) the piezoelectric layer including main surfaces, the IDT electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer; and
any one of a film thickness of the IDT electrode, a duty ratio of the IDT electrode, and a film thickness of the low-acoustic-velocity film is different between the first filter and the third filter.
27. The radio-frequency front-end circuit according to claim 1 , wherein
each of the two or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer, an interdigital transducer (IDT) electrode disposed on the substrate, and a protective film disposed on the IDT electrode;
in the first filter and the third filter, (1) a Rayleigh wave that propagates through the piezoelectric layer composed of LiNbO 3 or (2) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave; and
any one of a film thickness of the IDT electrode, a duty ratio of the IDT electrode, and a film thickness of the protective film is different between the first filter and the third filter.
28. The radio-frequency front-end circuit according to claim 1 , wherein
each of the two or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter and the third filter, each of the two or more elastic wave resonators has an acoustic-velocity-film multilayer structure including (i) the piezoelectric layer including main surfaces, the IDT electrode being disposed on one of the main surfaces, (ii) a high-acoustic-velocity supporting substrate through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer, and (iii) a low-acoustic-velocity film which is disposed between the high-acoustic-velocity supporting substrate and the piezoelectric layer and through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer;
the high-acoustic-velocity supporting substrate is composed of a silicon crystal; and
any one of a film thickness of the piezoelectric layer, a film thickness of the low-acoustic-velocity film, and a silicon crystal orientation of the high-acoustic-velocity supporting substrate is different between the first filter and the third filter.
29. The radio-frequency front-end circuit according to claim 1 , wherein
each of the two or more elastic wave resonators included in the first filter and the third filter is a surface acoustic wave resonator that includes a substrate including a piezoelectric layer and an interdigital transducer (IDT) electrode disposed on the substrate;
in the first filter and the third filter, (1) a leaky wave that propagates through the piezoelectric layer composed of LiTaO 3 or (2) a Love wave that propagates through the piezoelectric layer composed of LiNbO 3 is used as a surface acoustic wave; and
a film thickness of the IDT electrode is different between the first filter and the third filter.
30. The radio-frequency front-end circuit according to claim 1 , further comprising:
a first amplifying circuit connected to the first input/output terminal; and
a second amplifying circuit connected to the second input/output terminal.