Method of laser direct synthesis of graphene
A method of forming single and few layer graphene on a quartz substrate in one embodiment includes providing a quartz substrate, melting a portion of the quartz substrate, diffusing a form of carbon into the melted portion to form a carbon and quartz mixture, and precipitating at least one graphene layer out of the carbon and quartz mixture.
1. A method of forming at least one graphene layer, comprising:
providing a quartz substrate;
forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon;
decomposing the photoresist layer portion to release the form of carbon;
using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and
coalescing the form of carbon into at least one graphene layer on the quartz substrate.
2. The method of claim 1 , further comprising:
trapping the released form of carbon above the upper surface of the quartz substrate.
3. The method of claim 2 , further comprising:
positioning a quartz wafer above the upper surface of the quartz substrate such that the quartz wafer inhibits dispersion of the released form of carbon.
4. The method of claim 3 , wherein decomposing comprises:
heating the photoresist layer portion with a continuous wave laser.
5. A method of forming at least one graphene layer, comprising:
providing a quartz substrate;
forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon;
decomposing the photoresist layer portion to release the form of carbon;
using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion;
diffusing the form of carbon into the melted portion to form a carbon and quartz mixture; and
precipitating at least one graphene layer out of the carbon and quartz mixture.
6. The method of claim 5 , further comprising:
trapping the released form of carbon above the upper surface of the quartz substrate.
7. The method of claim 6 , further comprising:
positioning a quartz wafer above the upper surface of the quartz substrate such that the quartz wafer inhibits dispersion of the released form of carbon.
8. The method of claim 7 , wherein decomposing comprises:
heating the photoresist layer portion with a continuous wave laser.
9. A method of forming at least one graphene layer, comprising:
providing a quartz substrate;
forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon;
decomposing the photoresist layer portion to release the form of carbon;
using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and
precipitating the form of carbon into at least one graphene layer on the quartz substrate.
10. The method of claim 9 , further comprising:
trapping the released form of carbon above the upper surface of the quartz substrate.
11. The method of claim 10 , further comprising:
positioning a quartz wafer above the upper surface of the quartz substrate such that the quartz wafer inhibits dispersion of the released form of carbon.
12. The method of claim 11 , wherein decomposing comprises:
heating the photoresist layer portion with a continuous wave laser.