Method and apparatus for back-biased switch transistors
An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the back-bias metallization. The integrated RF circuit structure may further include a handle substrate on a front-side dielectric layer on the active device.
1. An integrated radio frequency (RF) circuit structure, comprising:
an active device including a source region, a drain region, and a body between the source region and the drain region on a first surface of an isolation layer;
a back-bias metallization on a second surface opposite the first surface of the isolation layer, the back-bias metallization overlapping the body and at least the source region of the active device, the back-bias metallization configured to bias the body of the active device; and
means for handling the integrated RF circuit structure on a front-side dielectric layer on the active device.
2. The integrated RF circuit structure of claim 1 , further comprising at least one front-side metallization coupled to the active device and arranged in the front-side dielectric layer, the at least one front-side metallization being distal from the back-bias metallization.
3. The integrated RF circuit structure of claim 1 , in which the back-bias metallization comprises a post-layer transfer metallization layer in a backside dielectric layer on the second surface of the isolation layer.
4. The integrated RF circuit structure of claim 1 , further comprising:
an RF enhancement layer on the front-side dielectric layer; and
the means for handling on the RF enhancement layer.
5. The integrated RF circuit structure of claim 1 , in which the body is biased independently or biased to a gate of the active device.
6. The integrated RF circuit structure of claim 1 , in which the active device comprises an RF switch.
7. An integrated radio frequency (RF) circuit structure, comprising:
an active device including a source region, a drain region, and a body between the source region and the drain region on a first surface of an isolation layer;
a back-bias metallization on a second surface opposite the first surface of the isolation layer, the back-bias metallization overlapping the body and at least the source region of the active device, the back-bias metallization configured to bias the body of the active device; and
a handle substrate on a front-side dielectric layer on the active device.
8. The integrated RF circuit structure of claim 7 , further comprising at least one front-side metallization coupled to the active device and arranged in the front-side dielectric layer, the at least one front-side metallization being distal from the back-bias metallization.
9. The integrated RF circuit structure of claim 1 , in which the back-bias metallization comprises a post-layer transfer metallization layer in a backside dielectric layer on the second surface of the isolation layer.
10. The integrated RF circuit structure of claim 7 , further comprising:
an RF enhancement layer between the front-side dielectric layer and the handle substrate.
11. The integrated RF circuit structure of claim 7 , in which the body is biased independently or biased to a gate of the active device.
12. The integrated RF circuit structure of claim 7 , in which the active device is part of an RF switch.
13. An integrated RF circuit structure, comprising:
an active device on a first surface of an isolation layer;
a back-bias metallization on a second surface opposite the first surface of the isolation layer, the back-bias metallization configured to bias a body of the active device, in which the back-bias metallization includes cutaway portions proximate source/drain regions of the active device; and
means for handling the integrated RF circuit structure on a front-side dielectric layer on the active device.
14. The integrated RF circuit structure of claim 1 , integrated into an RF front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.
15. The integrated RF circuit structure of claim 1 , in which the means for handling includes at least one other active device or passive device.
16. An integrated RF circuit structure of claim 7 , comprising:
an active device on a first surface of an isolation layer;
a back-bias metallization on a second surface opposite the first surface of the isolation layer, the back-bias metallization configured to bias a body of the active device, and in which the back-bias metallization includes cutaway portions proximate source/drain regions of the active device; and
a handle substrate on a front-side dielectric layer on the active device.
17. The integrated RF circuit structure of claim 7 , integrated into an RF front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.
18. The integrated RF circuit structure of claim 7 , in which the handle substrate includes at least one other active device or passive device.