Method of manufacturing organic light-emitting display apparatus
A method of manufacturing an organic light-emitting display apparatus including forming a first electrode on a substrate, forming a pixel defining layer on the substrate, forming a second electrode on the pixel defining layer and a portion of the first electrode, forming a sacrificial layer on the second electrode, patterning the sacrificial layer so as to expose a portion of the second electrode wherein the portion of the second electrode is disposed on the pixel defining layer, forming a conductive layer on the sacrificial layer and the portion of the second electrode, and removing the sacrificial layer such that a portion of the conductive layer on the portion of the second electrode remains.
1. A method of manufacturing an organic light-emitting display apparatus, the method comprising:
forming a first electrode on a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer including an opening exposing a portion of the first electrode and corresponding to a pixel;
forming a second electrode on the pixel defining layer and the portion of the first electrode;
forming a sacrificial layer on the second electrode;
patterning the sacrificial layer so as to expose a portion of the second electrode, wherein the portion of the second electrode is disposed on the pixel defining layer;
forming a conductive layer on the sacrificial layer and the portion of the second electrode; and
removing the sacrificial layer such that a portion of the conductive layer on the portion of the second electrode remains.
2. The method of claim 1 , further comprising:
forming a photoresist layer on the sacrificial layer; and
patterning the photoresist layer so as to expose a portion of the sacrificial layer,
wherein:
the portion of the sacrificial layer is disposed on the portion of the second electrode; and
the sacrificial layer is patterned by using the patterned photoresist layer.
3. The method of claim 2 , further comprising removing the patterned photoresist layer when the sacrificial layer is removed.
4. The method of claim 1 , wherein the sacrificial layer comprises highly fluorinated resin or fluorinated polymer that contains fluoride of about 20 wt % to about 60 wt %.
5. The method of claim 1 , wherein the removing of the sacrificial layer is executed by using hydrofluoroethers (HFEs).
6. The method of claim 1 , wherein the conductive layer comprises at least one of aluminum (Al), silver (Ag), gold (Au), copper (Cu), and nickel (Ni).
7. The method of claim 1 , wherein the conductive layer comprises a same material as a material of the second electrode.
8. The method of claim 1 , wherein the conductive layer comprises at least one of indium tin oxide (ITO), indium zinc oxide (IZO), ZnO, In2O3, indium gallium oxide (IGO), and aluminum zinc oxide (AZO).
9. The method of claim 1 , wherein the conductive layer comprises a light-absorbing material.
10. The method of claim 1 , further comprising forming a light-absorbing material layer on the conductive layer,
wherein the removing of the sacrificial layer comprises leaving a portion of the light-absorbing layer being disposed on the portion of the conductive layer.
11. The method of claim 1 , further comprising forming an organic light-emitting layer between the first electrode and the second electrode.
12. The method of claim 11 , wherein light from the organic light-emitting layer is emitted towards the second electrode.
13. The method of claim 1 , wherein the portion of the conductive layer exposed by the pixel defining layer contacts the second electrode.
14. The method of claim 1 , wherein the forming of the pixel defining layer comprises forming the pixel defining layer to cover another portion of the first electrode, the pixel defining layer including an opening exposing the portion of the first electrode.