Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatus
Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≥λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≥λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.
1. A magnetic element capable of generating one skyrmion and erasing the one skyrmion, comprising:
a magnet shaped like a substantially rectangular flat plate;
an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal;
a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal; and
a skyrmion sensor configured to detect the skyrmion, wherein a width Wm of the substantially rectangular magnet is such that 3·λ>Wm>λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm>λ, and the magnet has a notch structure at an edge of the magnet between the upstream electrode and the downstream electrode.
2. The magnetic element as set forth in claim 1 , wherein
a first corner of the notch structure that opposes the upstream electrode has an interior angle of 180 degrees or larger, and
the first corner is positioned closer to the downstream electrode with respect to a center of the magnet in the width Wm.
3. The magnetic element as set forth in claim 2 , wherein
a distance S 1 between the first corner of the notch structure of the magnet and the upstream electrode is such that 2·λ>S 1 ≥0.5·λ, where λ denotes a diameter of the skyrmion to be generated in the magnet.
4. The magnetic element as set forth in claim 2 , wherein,
a width w of the notch structure of the magnet is such that 0.5·λ>w>0.2·λ, where λ denotes a diameter of the skyrmion to be generated in the magnet.
5. The magnetic element as set forth in claim 2 , wherein
a length h of a side of the notch structure of the magnet that opposes the upstream electrode is such that 0.8·λ≥h≥0.2·λ, where λ denotes a diameter of the skyrmion to be generated.
6. The magnetic element as set forth in claim 2 , wherein
a distance S 2 between a second corner of the notch structure of the magnet that opposes the first corner and the downstream electrode is such that 0.5·λ≥S 2 , where λ denotes a diameter of the skyrmion to be generated.
7. The magnetic element as set forth in claim 1 , wherein
the magnet at least exhibits a skyrmion crystal phase in which the skyrmion appears and a ferromagnetic phase, according to a magnetic field applied thereto.
8. The magnetic element as set forth in claim 1 , wherein
the magnet is formed by one of a chiral magnet, a dipole magnet, a frustrated magnet and a layered structure made up by a magnetic material and a non-magnetic material.
9. The magnetic element as set forth in claim 1 , wherein
the skyrmion sensor includes, on one surface of the magnet, a layered structure of a nonmagnetic insulating thin film contacting a front surface of the magnet and a magnetic metal film provided on the nonmagnetic insulating thin film, and
the layered structure has a resistance value that changes according to the generation and erasing of the skyrmion.
10. The magnetic element as set forth in claim 9 , wherein
the layered structure of the skyrmion sensor is positioned between the upstream electrode and the notch structure of the magnet.
11. A skyrmion memory comprising:
the magnetic element as set forth in claim 1 ;
a generating unit of magnetic field that is provided facing the one surface of the magnet and configured to apply a magnetic field to the magnet;
a current path connected to the upstream electrode and the downstream electrode and configured to apply pulse currents to the magnet between the upstream electrode and the downstream electrode; and
a measuring unit connected to the skyrmion sensor and configured to measure whether the skyrmion is generated or erased based on a result of the detection performed by the skyrmion sensor.
12. The skyrmion memory as set forth in claim 11 , wherein
the skyrmion is generated or erased by applying a pulse current to the magnet between the upstream electrode and the downstream electrode.
13. The skyrmion memory as set forth in claim 12 , wherein
a direction of the pulse current applied to the magnet to generate the skyrmion differs from a direction of the pulse current applied to the magnet to erase the skyrmion.
14. The skyrmion memory as set forth in claim 12 , wherein
the measuring unit measures whether the skyrmion is present or absent by measuring a change in a resistance value detected by the skyrmion sensor.
15. The skyrmion memory as set forth in claim 12 , comprising a plurality of the magnetic elements stacked in a thickness direction.
16. A skyrmion memory device comprising:
a plurality of the magnetic elements used in the skyrmion memory as set forth in claim 12 ;
a plurality of electric lines to generate a skyrmion connected to the magnetic elements, each electric line to generate a skyrmion configured to supply a current to generate a skyrmion in a corresponding one of the magnetic elements;
a plurality of electric lines to erase a skyrmion connected to the magnetic elements, each electric line to erase a skyrmion configured to supply a current to erase a skyrmion in a corresponding one of the magnetic elements;
a plurality of word lines to sense a skyrmion connected to the magnetic elements, each word line to sense a skyrmion configured to transmit a voltage or current determined depending on whether a skyrmion is present or absent in a corresponding one of the magnetic elements;
a plurality of switches provided in the electric lines to generate a skyrmion, the electric lines to erase a skyrmion and the word lines to sense a skyrmion, the switches configured to select one of the magnetic elements; and
a detecting circuit configured to detect whether the skyrmion is present or absent in the magnetic element selected by the switches, based on a voltage or current flowing through a corresponding one of the word lines to sense a skyrmion.
17. The skyrmion memory device as set forth in claim 16 , wherein
each of the electric lines to generate a skyrmion is connected to the upstream electrode of a corresponding one of the magnetic elements,
each of the electric lines to erase a skyrmion is connected to the downstream electrode of a corresponding one of the magnetic elements;
each of the word lines to sense a skyrmion is connected to the skyrmion sensor of a corresponding one of the magnetic elements;
when the skyrmion is generated or erased in a given one of the magnetic elements, the switches select a corresponding one of the electric lines to generate a skyrmion and a corresponding one of the electric lines to erase a skyrmion, and
when presence or absence of the skyrmion is detected in a given one of the magnetic elements, the switches select a corresponding one of the lines to generate a skyrmion and a corresponding one of the word lines to sense a skyrmion.
18. A data storage apparatus comprising the skyrmion memory device as set forth in claim 16 embedded therein.
19. A data processing apparatus comprising the skyrmion memory device as set forth in claim 16 embedded therein.
20. A communication apparatus comprising the skyrmion memory device as set forth in claim 16 embedded therein.