Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing
Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.
1. A method for seasoning one or more chamber components in a process chamber, comprising:
placing a dummy substrate in the process chamber;
flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate; and
annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.
2. The method of claim 1 , wherein the at least one purge conduit faces a backside of the dummy substrate.
3. The method of claim 2 , wherein flowing a processing gas mixture comprises flowing a remote plasma of the processing gas mixture.
4. The method of claim 3 , wherein the processing gas mixture comprises ammonia (NH 3 ) and nitrogen trifluoride (NF 3 ).
5. The method of claim 4 , wherein the byproduct comprises ammonium fluorosilicate (NH 4 ) 2 SiF 6 .
6. The method of claim 2 , wherein annealing the dummy substrate further comprises flowing a hydrogen containing annealing gas.
7. The method of claim 1 , wherein the one or more chamber components comprises an edge ring.
8. The method of claim 1 , wherein the one or more chamber components comprises a seal band extending from a substrate support to contact a backside of the dummy substrate.
9. The method of claim 3 , wherein an upper surface of the dummy substrate comprises silicon oxide or silicon nitride.
10. The method of claim 1 , further comprising repeating the flowing and the annealing in a cyclic manner.
11. A method for processing one or more substrates a process chamber, comprising:
placing a dummy substrate in the process chamber;
flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate; and
annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed;
removing the dummy substrate;
placing a substrate to be processed in the process chamber;
flowing the processing gas mixture to the process chamber to react with the substrate and generate the byproduct on the substrate; and
annealing the substrate to sublimate the byproduct from the substrate while purging through the at least one purge conduit of the process chamber.
12. The method of claim 11 , wherein the at least one purge conduit faces the backside of the dummy substrate.
13. The method of claim 12 , wherein flowing a processing gas mixture comprises flowing a remote plasma of the processing gas mixture.
14. The method of claim 13 , wherein the processing gas mixture comprises ammonia (NH 3 ) and nitrogen trifluoride (NF 3 ).
15. The method of claim 14 , wherein the byproduct comprises ammonium fluorosilicate (NH 4 ) 2 SiF 6 .
16. The method of claim 12 , wherein the annealing further comprises flowing a hydrogen containing annealing gas.
17. The method of claim 11 , wherein an upper surface of the dummy substrate or the substrate comprises silicon oxide or silicon nitride.
18. The method of claim 11 , wherein the one or more chamber components comprises an edge ring or a seal band on a substrate support.