Thin film transistor, array substrate and display device having the same, and method of manufacturing thereof
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.
1. A thin film transistor comprising an active layer comprising a metal oxynitride, a source electrode, and a drain electrode;
wherein the active layer is partially covered by an etching stop layer on top of the active layer;
the active layer has a first region contacting the etching stop layer, a second region contacting the source electrode, and a third region contacting the drain electrode; and
the first region has an oxygen content lower than that of at least one of the second region and the third region.
2. The thin film transistor of claim 1 , having one or more of the following characteristics:
a ratio of oxygen content in at least one of the second region and the third region to oxygen content in the first region is approximately 1.005 to approximately 1.2;
a mobility rate ranging from approximately 50 cm 2 /Vs to approximately 100 cm 2 /Vs;
a turn-off current less than approximately 1×10 −12 A; and
a turn-on voltage larger than approximately −10V.
3. The thin film transistor of claim 1 , wherein the active layer comprises Zinc Oxynitride.
4. The thin film transistor of claim 3 , wherein the active layer further comprises an element X in the Zinc Oxynitride, the element X is selected from the group consisting of the following or combination thereof: boron, aluminum, gallium, indium, tin, titanium, zirconium, hafnium, silicon, fluorine, chlorine, bromine, iodine, sulfur, and selenium.
5. An array substrate comprising the thin film transistor according to claim 1 .
6. A display apparatus, comprising the array substrate of claim 5 .
7. The thin film transistor of claim 1 , wherein a ratio of oxygen content in at least one of the second region and the third region to oxygen content in the first region is approximately 1.005 to approximately 1.2.
8. The thin film transistor of claim 7 , wherein the oxygen content in at least one of the second region and the third region is approximately 0.5% to approximately 20%.
9. The thin film transistor of claim 1 , wherein the thin film transistor has a mobility rate ranging from approximately 50 cm 2 /Vs to approximately 100 cm 2 /Vs.
10. The thin film transistor of claim 1 , wherein the thin film transistor has a turn-off current less than approximately 1×10 −12 A.
11. The thin film transistor of claim 1 , wherein the thin film transistor has a turn-on voltage larger than approximately −10V.
12. The thin film transistor of claim 1 , wherein the thin film transistor is a top gate-type thin film transistor comprising:
the source electrode and the drain electrode on the base substrate;
the active layer on a side of the source electrode and the drain electrode distal to the base substrate;
a gate insulating layer on a side of the active layer distal to the base substrate; and
a gate electrode on a side of the gate insulating layer distal to the base substrate.