Photosensitive and heat-resistant material, method for producing same and use thereof
View Patent ↗A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and/or ITO.
1. A tin-based material, consisting of a mixture of:
from 50 to 100 wt. parts of graphene;
from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO);
from 0 to 50 wt. parts of indium-doped tin dioxide (ITO);
said material comprising at least one of ATO and ITO,
wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5,
and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.
2. The material of claim 1 , wherein the weight ratio between graphene and the at least one of ATO and ITO is in the range from 3 to 4.
3. The material of claim 1 , wherein the ATO and the ITO respectively have a Sn/Sb and Sn/In weight ratio in the range from 5 to 10.
4. The material of claim 1 , wherein the ATO corresponds to formula SnO 2 :Sb 2 O 3 , or SnO 2 :Sb 2 O 5 .
5. The material of claim 1 , wherein the ITO corresponds to formula SnO 2 :In 2 O 3 , or SnO 2 :In 2 O 5 .
6. A method of preparing the material based on graphene and ATO and/or ITO of claim 1 , according to the steps of:
preparing a graphene ink;
preparing an ATO and/or ITO ink;
adding the graphene ink and the ATO and/or ITO ink;
adding, if need be, a mixture of metal nanoparticles and of metal oxide nanoparticles or a mixture of metal nanoparticles and of semiconductor nanoparticles;
stirring the obtained mixture;
drying the mixture to provide the material based on graphene and on ATO and/or ITO.
7. The method of claim 6 , wherein the stirring of the obtained material is performed at a temperature in the range from 30 to 60° C.
8. The method of claim 6 , wherein the drying of the mixture is performed by evaporating the solvents.
9. A photoresistor comprising the material of claim 1 .
10. A thermistor comprising the material of claim 1 .
11. A tin-based material, consisting of:
from 50 to 100 wt. parts of graphene;
from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO);
from 0 to 50 wt. parts of indium-doped tin dioxide (ITO);
said material comprising at least one of ATO and ITO; and
metal and/or semiconductor nanoparticles,
wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5,
and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.
12. The material of claim 11 , further comprising from 1 to 10 wt. parts of a mixture of metal nanoparticles and of metal oxide nanoparticles.
13. The material of claim 12 , wherein the mixture of metal nanoparticles and of metal oxide nanoparticles comprises nanoparticles selected from the group consisting of silver, In 2 O 3 , InZnO, ZnO, CuO, NiO nanoparticles, and mixtures thereof.
14. The material of claim 11 , further comprising from 1 to 5 wt. parts of a mixture of metal nanoparticles and of semiconductor nanoparticles.
15. The material of claim 14 , wherein the mixture of metal nanoparticles and of semiconductor nanoparticles comprises silver and InGaZnO nanoparticles.
16. A homogeneous tin-based material, consisting of a mixture of:
from 50 to 100 wt. parts of graphene;
from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO);
from 0 to 50 wt. parts of indium-doped tin dioxide (ITO);
said material comprising at least one of ATO and ITO,
wherein the tin-based material has a weight ratio between graphene and the at least one of ATO and ITO in the range from 1 to 5,
and wherein the tin-based material comprises chemical bonds between its components affording heat resistance and photoresistance properties to the tin-based material.