Doping of selector and storage materials of a memory cell
Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.
1. A circuit comprising an array of memory cells, wherein a given memory cell of the array comprises:
a first electrode and a second electrode;
a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes aluminum; and
a selector element between the storage element and one of the first and second electrodes, wherein the selector element includes a doped chalcogenide material including aluminum oxide or aluminum nitride.
2. The circuit of claim 1 , wherein the layer of doped phase change-material includes aluminum oxide or aluminum nitride.
3. The circuit of claim 1 , wherein the doped phase change material has a dopant concentration in a range of 1-7 at %.
4. The circuit of claim 1 , wherein the doped phase change material comprises a solid solution of a chalcogenide material and aluminum.
5. The circuit of claim 1 , wherein the doped chalcogenide material of the selector element has a dopant concentration in a range of 1-7 at %.
6. The circuit of claim 1 , wherein the doped chalcogenide material of the selector element comprises a solid solution of a chalcogenide material and a dopant.
7. The circuit of claim 1 , wherein the storage element has a same width in an amorphous and crystalline state.
8. The circuit of claim 1 , wherein the crystallization temperature of the doped phase changed material of the storage element is in a range of 150-300 degrees Celsius (C).
9. A circuit comprising an array of memory cells, wherein a given memory cell of the array comprises:
a first electrode and a second electrode;
a storage element comprising a layer of doped phase change material between the first and second electrodes; and
a selector element between the storage element and one of the first and second electrodes, wherein the selector element includes a doped chalcogenide material including aluminum oxide or aluminum nitride.
10. The circuit of claim 9 , wherein the doped phase change material and the doped chalcogenide material have dopant concentrations in a range of 1-7 at %.
11. The circuit of claim 9 , wherein the doped phase change material of the storage element and the doped chalcogenide material of the selector element comprise solid solutions of a chalcogenide material and a dopant.
12. The circuit of claim 9 , wherein the doped chalcogenide material of the selector element comprises an aluminum-doped chalcogenide glass including antimony, and wherein the selector element comprises a uniform distribution of antimony.
13. The circuit of claim 9 , wherein the storage element has a same width in an amorphous and crystalline state.
14. The circuit of claim 9 , wherein the crystallization temperature of the doped phase changed material of the storage element in a range of 150-300 C.
15. A system comprising:
a processor; and
a memory device communicatively coupled with the processor, the memory device including an array of memory cells, wherein a given memory cell of the array includes:
a first electrode and a second electrode;
a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes aluminum; and
a selector element between the storage element and one of the first and second electrodes, wherein the selector element includes a doped chalcogenide material including aluminum oxide or aluminum nitride.
16. The system of claim 15 , wherein the layer of doped phase change material includes aluminum oxide or aluminum nitride.
17. The system of claim 15 , further comprising:
any of a display communicatively coupled to the processor, a network interface communicatively coupled to the processor, or a battery coupled to provide power to the system.