Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition
Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD) 2 , where M is Co or Ni and DAD is a diazadiene ligand.
1. A liquid precursor composition, comprising:
a metal compound represented by the following Chemical Formula 1:
M(DAD) 2 ; <Chemical Formula 1>
wherein in the Chemical Formula 1,
M denotes Co, and
DAD denotes a diazadiene ligand compound represented by R 1 NC(R 3 )C(R 4 )NR 2 ,
wherein R 1 and R 2 are isopropyl groups and R 3 and R 4 are independently H or a linear or branched C 1-5 alkyl group; and
wherein the liquid precursor composition comprises 90% or more of the metal compound,
wherein the liquid precursor composition is liquid at room temperature.
2. The composition of claim 1 ,
wherein the metal compound is 95% or more of the liquid precursor composition.
3. The composition of claim 1 ,
wherein the metal compound is Co( i PrNCHCHN i Pr) 2 .
4. The composition of claim 1 ,
wherein the composition comprises less than 10% impurities.
5. The composition of claim 1 ,
wherein the composition consists essentially of the metal compound.
6. The composition of claim 1 , wherein the molecular weight of the metal compound is 339 g/mol.
7. A method for preparing a liquid precursor composition, comprising:
reacting a mixture containing a halogenated metal compound represented by MX 2 or halogenated metal complex compound represented by ZMX 2 , a diazadiene ligand compound (DAD compound), and an alkali metal in a solvent, followed by purification to obtain a liquid precursor composition containing a metal compound represented by the following Chemical Formula 1:
M(DAD) 2 ; <Chemical Formula 1>
wherein,
M denotes Co, and
DAD denotes the diazadiene ligand compound represented by R 1 NC(R 3 )C(R 4 )NR 2 ,
wherein R 1 and R 2 are isopropyl groups and R3 and R4 are independently H or a linear or branched alkyl group of C 1-5 ;
X is a halogen; and
Z is one or more neutral ligands,
wherein in forming the mixture the DAD compound and alkali metal are not combined prior to the combination of either (a) the DAD compound with the halogenated metal compound or halogenated metal complex compound or (b) the alkali metal with the halogenated metal compound or halogenated metal complex compound and
wherein the liquid precursor composition comprises 90% or more of the metal compound, and wherein the liquid precursor composition is liquid at room temperature.
8. The method of claim 7 , wherein the neutral ligand is one or more of DME, THF, 2-methoxyethyl ether, ammonia, pyridine, N,N,N′,N′-tetramethyl-1,2-ethylenediamine, tricyclohexylphosphine, triphenylphosphine, 1,2-Bis(diphenylphosphino)ethane, or 1,3-Bis(diphenylphosphino)propane.
9. The method of claim 7 ,
wherein the mixture is obtained by mixing the halogenated metal compound represented by MX 2 or halogenated metal complex compound represented by ZMX 2 with the DAD compound, and then subsequently adding the alkali metal.
10. The method of claim 7 ,
wherein the mixture is obtained by mixing the halogenated metal compound represented by MX 2 or halogenated metal complex compound represented by ZMX 2 with the alkali metal, and then subsequently adding the DAD compound.
11. The method of claim 7 ,
wherein the liquid precursor composition comprises less than 10% impurities.
12. The method of claim 7 ,
wherein the composition consists essentially of the metal compound.
13. The method of claim 7 , wherein the metal compound is Co( i PrNCHCHN i Pr) 2 .