Process kit for a high throughput processing chamber
A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.
1. A processing chamber for processing a substrate, the processing chamber comprising:
a chamber body having an interior volume;
a lid for enclosing the interior volume;
a liner assembly disposed within the interior volume of the chamber body; and
a C-channel disposed within the interior volume of the chamber body and surrounding the liner assembly, the C-channel further comprising:
a top annular portion having a plurality of openings formed from a top surface of the top annular portion to a bottom surface of the top annular portion;
a bottom annular portion facing the top annular portion;
a middle annular portion connecting the top annular portion and the bottom annular portion to form a c-shaped body, the top annular portion, the bottom annular portion, and the middle annular portion defining a pumping region, the pumping region fluidly coupled to the interior volume through the plurality of openings formed through the top annular portion; and
an exhaust port formed in the bottom surface of the bottom annular portion, wherein a first portion of the plurality of openings disposed in a first region adjacent to the exhaust port has a first density and a second portion of the plurality of openings disposed in a second region opposite the first region has a second density greater than the first density.
2. The processing chamber of claim 1 , wherein the liner assembly further comprises:
a bottom liner disposed on a bottom of the processing chamber;
a middle liner disposed on the bottom liner; and
a top liner disposed on the middle liner, the bottom liner, the middle liner, and the top liner forming a continuous surface.
3. The processing chamber of claim 2 , wherein the top liner further comprises:
an outer wall; and
a top surface substantially perpendicular to the outer wall, the top surface and the outer wall intersecting at a radius.
4. The processing chamber of claim 3 , wherein the radius is 25 mm.
5. The processing chamber of claim 1 further comprising:
an isolator.
6. The processing chamber of claim 5 , wherein the isolator is L-shaped.
7. The processing chamber of claim 5 , wherein the isolator is T-shaped.
8. A process kit for use in an interior volume of a processing chamber, the process kit comprising:
a liner assembly configured to line an interior volume of a processing chamber;
a C-channel sized to circumscribe the liner assembly, the C-channel further comprising:
a top annular portion having a plurality of openings formed from a top surface of the top annular portion to a bottom surface of the top annular portion;
a bottom annular portion facing the top annular portion;
a middle annular portion connecting the top annular portion and the bottom annular portion to for a c-shaped body, the top annular portion, the bottom annular portion, and the middle annular portion defining a pumping region, the pumping region fluidly coupled to the interior volume through the plurality of openings formed through the top annular portion; and
an exhaust port formed in the bottom surface of the bottom annular portion, wherein a first portion of the plurality of openings disposed in a first region adjacent to the exhaust port has a first density and a second portion of the plurality of openings disposed in a second region opposite the first region has a second density greater than the first density; and
an isolator configured to circumscribe the liner assembly.
9. The process kit of claim 8 , wherein the liner assembly further comprises:
a bottom liner disposed on a bottom of the processing chamber;
a middle liner disposed atop the bottom liner and coupled thereto; and
a top liner disposed atop the middle liner and coupled thereto, the bottom liner, the middle liner, and the top liner forming a continuous surface having an outer diameter smaller than an inner diameter of the C-channel.
10. The process kit of claim 9 , wherein the top liner further comprises:
an outer wall; and
a top surface substantially perpendicular to the outer wall, the top surface and the outer wall intersecting at a radius.
11. The process kit of claim 10 , wherein the radius is 25 mm.
12. The process kit of claim 8 , wherein the isolator is L-shaped.
13. The process kit of claim 8 , wherein the isolator is T-shaped.