Method for detecting focal plane based on grating talbot effect
View Patent ↗The present disclosure relates to a method for detecting focal plane based on a grating Talbot effect, the function of which is to detect position of a silicon wafer in a photolithography machine in real time so as to implement an adjustment of leveling and foal plane of the silicon wafer in a high resolution. The detection system utilizes a phase change of “self-image” generated by a grating Talbot effect caused by defocusing of the silicon wafer, so as to accomplish the detecting for focal plane of the silicon wafer in the photolithography machine in a high resolution: if the silicon wafer is at a focal plane, the imaged wavefront by the grating is a planar wavefront; and when the silicon wafer is defocused, the imaged wavefront is a spherical wavefront. Such a detection system has a simple structure, a higher anti-interference capability and a perfect adaption of the process.
1. A method for detecting focal plane based on Grating Talbot Effect, characterized by:
a system for detecting focal plane constituted of a light source ( 1 ), a beam collimator and expander unit ( 2 ), a 4f optical system formed of a first set of lens (Lens_ 1 ) and a second set of lens (Lens_ 2 ), a measured silicon wafer ( 3 ), a diffraction grating ( 4 ) and a CCD detector ( 5 ),
the first set of lens (Lens_ 1 ) and the second set of lens (Lens_ 2 ) form the 4f optical system:
if the measured silicon wafer ( 3 ) is on a cofocal plane of the 4f system, an emergence planar wavefront of the beam collimator and expander unit ( 2 ) is still a planar wavefront after passing through the 4f optical system, and a Talbot self-image is formed by itself through the diffraction grating ( 4 ); and
if the measured silicon wafer ( 3 ) is defocused, an emergence planar wavefront of the beam collimator and expander unit ( 2 ) becomes a spherical wavefront after passing through the 4f optical system, and period and phase of the Talbot self-image formed by itself through the diffraction grating ( 4 ) are changed, and the Talbot self-images for the planar wavefront and the spherical wavefront are measured by the CCD detector ( 5 ) so as to complete the measurement for detecting the focal plane of the silicon wafer.
2. The method for detecting focal plane according to claim 1 , characterized by that
when the measured silicon wafer ( 3 ) is located on the cofocal plane of the 4f system, an exit wavefront of the 4f system is a planar wavefront; based on a grating diffraction principle, when the planar wavefront is incident on the diffraction grating ( 4 ), a periodic interference fringe, a period of which is a period for the Talbot self-image and is identical to that (p) of the diffraction grating ( 4 ), is formed in the CCD detector ( 5 ); and
when the measured silicon wafer ( 3 ) is defocused, an exit wavefront of the 4f system is a spherical wavefront, an interference fringe caused by the spherical wavefront is generated in the CCD detector ( 5 ), and Its period is represented by the following equation:
p
s
=
L
-
z
L
p
=
p
±
s
z
f
2
p
,
in which the diffraction grating ( 4 ) is located at a back focal plane of the second set of lens (Lens_ 2 ), p s is the period of the interference fringe caused by the spherical wavefront, L is a distance from a convergence center for the spherical wavefront to the diffraction grating ( 4 ), z is a distance from the diffraction grating to the CCD detector, p is a cycle of the diffraction grating, s is a defocusing distance of the silicon wafer, and f is a focal length of the second set of lens (Lens_ 2 ),
the detection of the focal plane for the measured silicon wafer ( 3 ) in a high precision is accomplished by measuring changes of the periods and phase of the Talbot self-images of the diffraction grating ( 4 ).