Silicon carbide semiconductor device manufacturing method

1. A silicon carbide semiconductor device manufacturing method, comprising:

a. growing a silicon carbide single crystal film at a first temperature on a silicon carbide semiconductor substrate using chemical vapor deposition (CVD), the first temperature being a constant temperature between 1550° C. and 1700° C.;

b. cooling the silicon carbide semiconductor substrate from the first temperature to a second temperature, which is lower than the first temperature, in an atmosphere of a carbon-and-chlorine-containing gas after growing the silicon carbide crystal film, the second temperature being between 1300° C. and 1500° C.; and

c. subsequently cooling the silicon carbide semiconductor substrate to a third temperature, which is lower than 1300° C., in a hydrogen gas atmosphere such that the silicon carbide single crystal film grown at the first temperature is exposed to the hydrogen gas atmosphere,

wherein, prior to growing the silicon carbide single crystal film at the first temperature, a gas mixture including a first raw material gas including silicon and a second raw material gas including carbon, an additive gas including chlorine, and a dopant gas is introduced into a CVD furnace for performing the CVD.

2. The silicon carbide semiconductor device manufacturing method according to claim 1 , wherein cooling in step (b) is carried out in a mixed gas atmosphere containing a carbon-and-chlorine-containing gas added to hydrogen gas.

3. The silicon carbide semiconductor device manufacturing method according to claim 2 , wherein, in the mixed gas atmosphere, the carbon-containing gas is added at a ratio of 0.1% to 0.3% with respect to the hydrogen gas.

4. The silicon carbide semiconductor device manufacturing method according to claim 3 , wherein the silicon carbide single crystal film includes Z 1/2 centers and EH 6/7 centers, and wherein, in step (c), the Z 1/2 centers have a density of about 6.7×10 12 cm −3 , and the EH 6/7 centers have a density of about 2.7×10 12 cm −3 .

5. The silicon carbide semiconductor device manufacturing method according to claim 2 , wherein the mixed gas atmosphere is such that the chlorine-containing gas is added at a ratio of 0.5% to 1.0% with respect to the hydrogen gas.

6. The silicon carbide semiconductor device manufacturing method according to claim 5 , wherein the silicon carbide single crystal film includes Z 1/2 centers and EH 6/7 centers, and wherein the Z 1/2 centers have a density of about 6.7×10 12 cm −3 , and the EH 6/7 centers have a density of about 2.7×10 12 cm −3 .

7. The silicon carbide semiconductor device manufacturing method according to claim 2 , wherein the silicon carbide single crystal film includes Z 1/2 centers and EH 6/7 centers, and wherein, in step (c), the Z 1/2 centers have a density of about 6.7×10 12 cm −3 , and the EH 6/7 centers have a density of about 2.7×10 12 cm −3 .

8. The silicon carbide semiconductor device manufacturing method of claim 1 , further comprising:

prior to introducing the gas mixture into the CVD furnace, introducing the silicon carbide semiconductor substrate into the furnace;

introducing hydrogen gas into the furnace;

cleaning a surface of the silicon carbide semiconductor substrate by chemical etching by heating the CVD furnace to a predetermined heating temperature; and

reducing the temperature in the CVD furnace to the first temperature.

9. The silicon carbide semiconductor device manufacturing method of claim 1 , wherein the additive gas is hydrogen chloride (HCl).

10. The silicon carbide semiconductor device manufacturing method of claim 1 , wherein the dopant gas is nitrogen (N2).

11. The silicon carbide semiconductor device manufacturing method of claim 1 , wherein cooling the silicon carbide semiconductor substrate to the third temperature includes stopping a flow of the carbon-and-chlorine-containing gas after cooling the silicon carbide semiconductor substrate to the second temperature, and continuously cooling the silicon carbide semiconductor substrate from the first temperature to the third temperature in the hydrogen gas atmosphere.

12. A silicon carbide semiconductor device manufacturing method, comprising:

a. growing a silicon carbide single crystal film at a first temperature on a silicon carbide semiconductor substrate using chemical vapor deposition, the first temperature being a constant temperature between 1550° C. and 1700° C.;

b. cooling the silicon carbide semiconductor substrate from the first temperature to a second temperature, which is lower than the first temperature, in an atmosphere of a carbon-containing gas after growing the silicon carbide crystal film, the second temperature being between 1300° C. and 1500° C.; and

c. subsequently cooling the silicon carbide semiconductor substrate to a third temperature, which is lower than 1300° C., in a hydrogen gas atmosphere such that the silicon carbide single crystal film grown at the first temperature is exposed to the hydrogen gas atmosphere,

wherein the silicon carbide single crystal film includes Z 1/2 centers and EH 6/7 centers, and

wherein, in step (c), the Z 1/2 centers have a density of about 6.7×10 12 cm −3 , and the EH 6/7 centers have a density of about 2.7×10 12 cm −3 .

13. The silicon carbide semiconductor device manufacturing method of claim 12 , wherein cooling the silicon carbide semiconductor substrate to the third temperature includes stopping a flow of the carbon-and-chlorine-containing gas after cooling the silicon carbide semiconductor substrate to the second temperature, and continuously cooling the silicon carbide semiconductor substrate from the first temperature to the third temperature in the hydrogen gas atmosphere.

14. A silicon carbide semiconductor device manufacturing method, comprising:

growing a silicon carbide single crystal film at a first temperature on a silicon carbide semiconductor substrate using chemical vapor deposition (CVD), the first temperature being a constant temperature between 1550° C. and 1700° C.;

cooling the silicon carbide semiconductor substrate from the first temperature to a second temperature which is lower than the first temperature in an atmosphere of a carbon-and-chlorine-containing gas after growing the silicon carbide crystal film, the second temperature being between 1300° C. and 1500° C.; and

subsequently cooling the silicon carbide semiconductor substrate to a third temperature, which is lower than 1300° C. such that the silicon carbide single crystal film grown at the first temperature is exposed to an atmosphere while the silicon carbide semiconductor substrate is cooled to the third temperature,

wherein, prior to growing the silicon carbide single crystal film at the first temperature, a gas mixture including a first raw material gas including silicon and a second raw material gas including carbon, an additive gas including chlorine, and a dopant gas is introduced into a CVD furnace for performing the CVD.

15. The silicon carbide semiconductor device manufacturing method according to claim 14 , wherein subsequently cooling the silicon carbide semiconductor substrate to a third temperature is conducted in a hydrogen gas atmosphere.

16. The silicon carbide semiconductor device manufacturing method of claim 14 , wherein cooling the silicon carbide semiconductor substrate to the third temperature includes stopping a flow of the carbon-and-chlorine-containing gas after cooling the silicon carbide semiconductor substrate to the second temperature, and continuously cooling the silicon carbide semiconductor substrate from the first temperature to the third temperature in the hydrogen gas atmosphere.