Spot heater and device for cleaning wafer using the same

1. A device for cleaning a wafer, the device comprising:

a heater chuck on which the wafer is mounted, the heater chuck being configured to heat a bottom surface of the wafer;

a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and

a spot heater configured to heat a spot of the top surface of the wafer,

wherein the heater chuck comprises:

a top plate supporting the wafer;

a ring heater configured to heat the top plate from underneath the top plate;

a spin chuck assembly accommodating the ring heater; and

a spin motor assembly positioned under the spin chuck assembly and configured to rotate the spin chuck assembly and the top plate,

wherein the spin chuck assembly comprises a first hole,

wherein the spin motor assembly comprises a second hole aligned with the first hole,

wherein the heater chuck further comprises a fixing shaft coupled to the ring heater and passing through the first hole and the second hole, and

wherein the fixing shaft and the ring heater are fixedly attached while the spin motor assembly and the spin chuck assembly rotate.

2. The device of claim 1 , wherein the top plate comprises:

a first region that is ring-shaped; and

a second region that is ring-shaped and surrounds the first region, and

wherein the ring heater comprises:

a first ring heater configured to heat the first region from underneath the top plate; and

a second ring heater configured to heat the second region from underneath the top plate.

3. The device of claim 2 further comprising a controller configured to independently control the first ring heater and the second ring heater.

4. The device of claim 1 , wherein the spot heater is further configured to irradiate the spot with laser light to heat the wafer.

5. The device of claim 4 , wherein the laser light has a wavelength in a near infrared (NIR) region.

6. The device of claim 4 , wherein the spot heater comprises:

a laser source configured to supply the laser light; and

a filter provided between the laser source and the spot and configured to adjust a size of the spot that is irradiated.

7. The device of claim 4 , wherein the spot heater comprises:

a laser source configured to supply the laser light; and

a vertical position adjusting device configured to adjust a vertical position of the laser source to adjust a size of the spot that is irradiated.

8. The device of claim 1 , wherein the spot heater is further configured to heat an edge region of the wafer.

9. The device of claim 8 , wherein the edge region has a width ranging from 1 mm to 10 mm.

10. The device of claim 1 , wherein the spot heater comprises:

a heating source configured to supply heat; and

a cover unit configured to isolate the heating source from the chemical liquid or fumes of the chemical liquid.

11. The device of claim 10 , wherein the cover unit comprises a purge part configured to remove foreign materials from inside the cover unit and the heating source.

12. A device for cleaning a wafer, the device comprising:

a first heater accommodating the wafer and configured to heat the wafer from a first side of the wafer; and

a second heater configured to heat the wafer from a second side of the wafer, the second side being opposite from the first side,

wherein the first heater comprises:

a top plate supporting the wafer;

a ring heater configured to heat the top plate from underneath the top plate;

a spin chuck assembly accommodating the ring heater; and

a spin motor assembly positioned under the spin chuck assembly and configured to rotate the spin chuck assembly and the top plate,

wherein the spin chuck assembly comprises a first hole,

wherein the spin motor assembly comprises a second hole aligned with the first hole,

wherein the first heater further comprises a fixing shaft coupled to the ring heater and passing through the first hole and the second hole, and

wherein the fixing shaft and the ring heater are fixedly attached while the spin motor assembly and the spin chuck assembly rotate.

13. The device of claim 12 further comprising a controller configured to change a position of the second heater with respect to the wafer.

14. The device of claim 12 , wherein the first heater is configured to heat a first region of the wafer,

wherein the second heater is configured to heat a second region of the wafer, and

wherein the first region is larger than the second region.

15. The device of claim 12 , wherein the second heater comprises a plurality of second heaters configured to heat a second region including an edge region of the wafer from the second side of the wafer.

16. The device of claim 12 , wherein the first heater comprises a plurality of first heaters configured to heat, from the first side of the wafer, a first region provided between a center region of the wafer and an edge region of the wafer.