Semiconductor device
Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion ( 2 ) formed on the upper surface of a semiconductor substrate ( 1 ), a passivation layer ( 3 ) so formed on the upper surface of the semiconductor substrate ( 1 ) as to overlap a part of the electrode pad portion ( 2 ) and having a first opening portion ( 3 a ) where the upper surface of the electrode pad portion ( 2 ) is exposed, a barrier metal layer ( 5 ) formed on the electrode pad portion ( 2 ), and a solder bump ( 6 ) formed on the barrier metal layer ( 5 ). The barrier metal layer ( 5 ) is formed such that an outer peripheral end ( 5 b ) lies within the first opening portion ( 3 a ) of the passivation layer ( 3 ) when viewed in plan.
1. A semiconductor device comprising:
an electrode pad portion on a face of a substrate;
a first protection layer including a first opening through which a top face of the electrode pad portion is exposed, the first protection layer disposed on the face of the substrate and overlapping part of the electrode pad portion;
a barrier metal layer on the electrode pad portion;
a second protection layer covering a region on the first protection layer and a region on the electrode pad portion; and
a bump electrode on the barrier metal layer,
wherein the barrier metal layer has a circumferential end part thereof formed inward of the first opening in the first protection layer as seen in a plan view,
wherein the electrode pad portion is rectangular as seen in a plan view;
wherein
a peripheral part of the barrier metal layer lies on the second protection layer, and
an upper surface and a lower surface of the barrier metal layer have a curved shape extending along the second protection layer so that a center point of a curvature of the curved shape as seen in a sectional view is located on a substrate side of the curved shape, and
wherein
the second protection layer is formed of polyimide,
the second protection layer has a second opening through which the top face of the electrode pad portion is exposed and which has an opening width smaller than the first opening, and
a thickness of the second protection layer as seen in a sectional view increases gradually from a rim part of the second opening to the peripheral part of the barrier metal layer.
2. The semiconductor device according to claim 1 , wherein the electrode pad portion is formed of a material comprising aluminum, the barrier metal layer is formed of a material comprising titanium, and the bump electrode comprises a solder bump.
3. A semiconductor device comprising:
an electrode pad portion on a face of a substrate;
a first protection layer including a first opening through which a top face of the electrode pad portion is exposed, the first protection layer disposed on the face of the substrate to overlap part of the electrode pad portion;
a barrier metal layer on the electrode pad portion so as not to be in direct contact with the first protection layer;
a second protection layer covering a region on the first protection layer and a region on the electrode pad portion; and
a bump electrode on the barrier metal layer,
wherein the first protection layer has a step part as a result of the first protection layer overlapping the part of the electrode pad portion; and
wherein the barrier metal layer has a circumferential end part thereof formed outward of the step part as seen in a plan view,
wherein the electrode pad portion is rectangular as seen in a plan view;
wherein
a peripheral part of the barrier metal layer lies on the second protection layer, and
an upper surface and a lower surface of the barrier metal layer have a curved shape extending along the second protection layer so that a center point of a curvature of the curved shape as seen in a sectional view is located on a substrate side of the curved shape, and
wherein
the second protection layer is formed of polyimide,
the second protection layer has a second opening through which the top face of the electrode pad portion is exposed and which has an opening width smaller than the first opening, and
a thickness of the second protection layer as seen in a sectional view increases gradually from a rim part of the second opening to the peripheral part of the barrier metal layer.
4. The semiconductor device according to claim 3 , wherein the electrode pad portion is formed of a material comprising aluminum, the barrier metal layer is formed of a material comprising titanium, and the bump electrode comprises a solder bump.