Photoelectric conversion device
A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.
1. A photoelectric conversion device, comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on the first photoelectric conversion element with an insulating film therebetween; and
a second optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on the second photoelectric conversion element with the insulating film therebetween,
wherein an interval between the first pattern and the second pattern that are adjacent to each other is configured to permit transmission of light having wavelengths longer than a maximum wavelength of light that can be photoelectrically converted by the first photoelectric conversion element and the second photoelectric conversion element and is configured to prevent transmission of light having wavelengths shorter than or equal to the maximum wavelength of light that can be photoelectrically converted by the first photoelectric conversion element and the second photoelectric conversion element.
2. The photoelectric conversion device according to claim 1 , wherein
the first and second photoelectric conversion elements include at least silicon and a silicon oxide film.
3. The photoelectric conversion device according to claim 1 , wherein
the conductive material films of the first and second optical filters are made of Al or an Al alloy.
4. The photoelectric conversion device according to claim 1 , wherein
the first and second photoelectric conversion elements and a circuit portion that performs signal processing on outputs from the first and second photoelectric conversion elements are formed on an identical substrate, and
a shield metal portion is provided in a layer including the first optical filter and the second optical filter, and the shield metal portion covers the circuit portion and a region between the circuit portion and the first photoelectric conversion element.
5. The photoelectric conversion device according to claim 1 , wherein
the first and second photoelectric conversion elements include at least silicon and a silicon oxide film,
the conductive material films of the first and second optical filters are made of Al or an Al alloy,
the structures in the first and second patterns are circular openings , and
the interval between the first pattern and the second pattern is at least 600 nm.
6. The photoelectric conversion device according to claim 1 , wherein
the structures in the first and second patterns are slits.
7. The photoelectric conversion device according to claim 1 , wherein
the first and second optical filters are grounded.
8. A photoelectric conversion device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on the first photoelectric conversion element with an insulating film therebetween; and
a second optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on the second photoelectric conversion element with the insulating film therebetween,
wherein an interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern,
the structures in the first and second patterns are slits, and
the photoelectric conversion device includes a conductive material film that covers outermost portions of the plurality of slits in the first and second patterns.