SWIR to visible image up-conversion integrated device

1. A device for up-conversion of Short Wavelength Infra-Red (SWIR) images into visible images, the device comprising a sub micrometer thickness structure that is composed of several sub-layers, each having a typical thickness of tens to hundreds of nanometers; wherein the device is composed of two main sections, an organic light emitted diode (OLED) section on top of a photodetector section, wherein the sub-layers comprise:

A) a transparent anode layer that serves also as holes blocking layer;

B) the photodetector section comprising:

i) a SWIR absorption layer comprising nano-structures or nano-columns that are grown perpendicular to a substrate applied on top of the transparent anode layer;

ii) a structured pixilated metal layer applied on top of the SWIR absorption layer to serve as dual sided mirror for the SWIR light from one side and to visible light on the other side; and

C) the organic light emitted diode (OLED) section comprising:

i) a holes transport layer applied on top of the pixelated metal layer;

ii) an OLED layer applied on top of the holes transport layer;

iii) an electron transport layer applied on top of the OLED layer; and

D) a transparent cathode layer applied on top of the electron transport layer; and

wherein, a SWIR image enters the device through the transparent anode layer and a visible image is emitted from the device through the top transparent cathode.

2. The device of claim 1 , comprising an external current source configured to create an electric field in the device that causes holes created by absorption of SWIR photons in the SWIR absorption layer to drift through the device towards the visible light transparent cathode at the OLED section side of the device and electrons created by absorption of SWIR photons in the SWIR absorption layer to drift towards the SWIR transparent anode at the photodetector side of the device, the external current source also adapted to inject electrons into the device at the cathode that can recombine with the holes to create a visible image in the OLED layer and to supplement the energy difference between the SWIR absorbed photons and the visible photons that are emitted.

3. The device of claim 1 , wherein the photodetector section comprises a surface plasmon enhanced sub-layer interlaced with the structured pixilated metal sub-layer located after the SWIR absorption sub-layer.

4. The device of claim 1 , wherein the thickness of the SWIR absorbing sub-layer is shorter than the charge carrier's diffusion length.

5. The device of claim 1 , wherein only the drifted holes maintain the spatial information of the image and visible photons are emitted at the same spatial location on one side of the device that the SWIR photons created the hole-electron pairs in the SWIR absorption sub-layer on the other side of the device.

6. The device of claim 1 , wherein the structured pixilated metal layer serves as a surface plasmon enhancer and also as a double sided mirror for the SWIR incident light and for the visible light emitted by the OLED on the other side.

7. The device of claim 1 , wherein metal nano-colloids or nano-columns having specific shapes and sizes to be tuned for SWIR wavelengths are immersed among the nano-columns in the SWIR absorption sub-layer, thereby creating localized plasmon enhanced absorption.

8. The device of claim 1 comprising objective optics before the anode and one of collimating optics or a focal plane array comprising sensors sensitive to visible light after the cathode.

9. The device according to claim 1 , wherein the photodetector section and the organic light emitted diode (OLED) section are located between the transparent anode layer and the transparent cathode layer.