Organic light emitting diode display
An organic light emitting diode display is disclosed that includes at least a shield layer on a substrate; a semiconductor layer on the shield layer; a gate insulating layer on the semiconductor layer; a gate electrode on the gate insulating layer; a connection electrode disposed on the same layer as the gate electrode, the connection electrode electrically connected to the shield layer; a source electrode and a drain electrode on the gate electrode, at least one of the drain and source electrodes electrically connected to the semiconductor layer and the connection electrode; an insulating layer on the drain electrode and the source electrode; and a first electrode on the insulating layer and electrically connected to the source electrode.
1. An organic light emitting diode display comprising:
a shield layer on a substrate;
a semiconductor layer on the shield layer;
a gate insulating layer on the semiconductor layer;
a gate electrode on the gate insulating layer;
a connection electrode disposed on the same layer as the gate electrode, the connection electrode electrically connected to the shield layer;
a source electrode and a drain electrode on the gate electrode, at least one of the drain and source electrodes electrically connected to the semiconductor layer and the connection electrode;
an insulating layer on the drain electrode and the source electrode; and
a first electrode on the insulating layer and electrically connected to the source electrode.
2. The organic light emitting diode display of claim 1 , further comprising a buffer layer on the shield layer.
3. The organic light emitting diode display of claim 1 , wherein the gate electrode includes a first gate electrode and a second gate electrode disposed on the first gate electrode.
4. The organic light emitting diode display of claim 3 , wherein the connection electrode is on the same layer as the second gate electrode.
5. The organic light emitting diode display of claim 4 , wherein the connection electrode passes through the semiconductor layer.
6. The organic light emitting diode display of claim 5 , wherein the connection electrode is connected to a surface of the shield layer and a side of the semiconductor layer.
7. The organic light emitting diode display of claim 5 , wherein a side of the connection electrode contacts the semiconductor layer.
8. The organic light emitting diode display of claim 4 , further comprising a first interlayer dielectric layer on the first gate electrode, wherein the connection electrode is electrically connected to the shield layer through a first contact hole passing through the first interlayer dielectric layer, the gate insulating layer, the semiconductor layer, and the buffer layer.
9. The organic light emitting diode display of claim 8 , wherein the connection electrode contacts the semiconductor layer exposed to an inner circumference surface of the first contact hole.
10. The organic light emitting diode display of claim 9 , wherein the semiconductor layer includes a channel, a lightly doped region, a source region, and a drain region.
11. The organic light emitting diode display of claim 10 , wherein the connection electrode contacts the source region of the semiconductor layer.
12. The organic light emitting diode display of claim 4 , further comprising a second interlayer dielectric layer on the second gate electrode, wherein the drain electrode is electrically connected to the semiconductor layer through a second contact hole passing through the second interlayer dielectric layer, the first interlayer dielectric layer, and the gate insulating layer.
13. The organic light emitting diode display of claim 12 , wherein the source electrode is electrically connected to the connection electrode through a third contact hole passing through the second interlayer dielectric layer.
14. The organic light emitting diode display of claim 13 , wherein the shield layer is overlapped with the second contact hole and the first contact hole.
15. The organic light emitting diode display of claim 3 , wherein the connection electrode is on the same layer as the first gate electrode.
16. The organic light emitting diode display of claim 15 , further comprising a second interlayer dielectric layer on the second gate electrode, wherein the drain electrode is electrically connected to the semiconductor layer through a second contact hole passing through the second interlayer dielectric layer, the first interlayer dielectric layer, and the gate insulating layer.
17. The organic light emitting diode display of claim 15 , wherein the connection electrode is electrically connected to the shield layer through a fourth contact hole passing through the gate insulating layer and the buffer layer.
18. The organic light emitting diode display of claim 15 , further comprising a first interlayer dielectric layer on the first gate electrode and a second interlayer dielectric layer on the second gate electrode, wherein the the source electrode is electrically connected to the connection electrode through a fifth contact hole passing through the first and second interlayer dielectric layer.
19. The organic light emitting diode display of claim 15 , wherein the source electrode is electrically connected to the semiconductor layer through a sixth contact hole passing through the second interlayer dielectric layer, the first interlayer dielectric layer, and the gate insulating layer.
20. The organic light emitting diode display of claim 19 , wherein the shield layer is overlapped with the second contact hole, the fourth contact hole, the fifth contact hole and sixth contact hole.