Semiconductor device and electronic device
View Patent ↗An oscillator capable of quick startup is provided. A transistor is provided between an output terminal of a certain stage inverter and an input terminal of the following stage inverter included in the voltage controlled oscillator. With the use of the on resistance of the transistor, the oscillation frequency of the clock signal is controlled. While supply of the power supply voltage is stopped, a signal that is input to the input terminal of the inverter just before supply of the power supply voltage is stopped is stored by turning off the transistor. This operation makes it possible to immediately output a clock signal that has the same frequency as that before supply of the power supply voltage is stopped at the time when the power supply voltage is supplied again.
1. A semiconductor device comprising a circuit, the circuit comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a capacitor,
wherein the first transistor has a polarity different from a polarity of the second transistor,
wherein a gate of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the first transistor is directly connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,
wherein a gate of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and a first electrode of the capacitor, and
wherein a second electrode of the capacitor is directly connected to the other of the source and the drain of the first transistor.
2. The semiconductor device according to claim 1 , wherein the third transistor and the fourth transistor each comprise an oxide semiconductor in a channel formation region.
3. The semiconductor device according to claim 2 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ga, Y, or Sn).
4. The semiconductor device according to claim 1 ,
wherein the other of the source and the drain of the first transistor is electrically connected to a high potential power supply line, and
wherein the other of the source and the drain of the second transistor is electrically connected to a low potential power supply line.
5. The semiconductor device according to claim 1 , wherein the second transistor comprises an oxide semiconductor in a channel formation region thereof.
6. The semiconductor device according to claim 5 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ga, Y, or Sn).
7. The semiconductor device according to claim 1 ,
wherein the first transistor is a p-channel transistor, and
wherein the second transistor is an n-channel transistor.
8. An electronic device comprising:
the semiconductor device according to claim 1 ; and
a display device.
9. The semiconductor device according to claim 1 , further comprising a fifth transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to the other of the source and the drain of the third transistor.
10. The semiconductor device according to claim 1 ,
wherein the gate of the first transistor and the gate of the second transistor are electrically connected to a first terminal of the circuit, and
wherein the other of the source and the drain of the third transistor is electrically connected to a second terminal of the circuit.
11. A semiconductor device comprising a circuit, the circuit comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a capacitor,
wherein the first transistor has a polarity different from a polarity of the second transistor,
wherein a gate of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the first transistor is directly connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,
wherein a gate of the third transistor is directly connected to one of a source and a drain of the fourth transistor and a first electrode of the capacitor, and
wherein a second electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor.
12. The semiconductor device according to claim 11 , wherein the third transistor and the fourth transistor each comprise an oxide semiconductor in a channel formation region.
13. The semiconductor device according to claim 12 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ga, Y, or Sn).
14. The semiconductor device according to claim 11 ,
wherein the other of the source and the drain of the first transistor is electrically connected to a high potential power supply line, and
wherein the other of the source and the drain of the second transistor is electrically connected to a low potential power supply line.
15. The semiconductor device according to claim 11 , wherein the second transistor comprises an oxide semiconductor in a channel formation region thereof.
16. The semiconductor device according to claim 15 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ga, Y, or Sn).
17. The semiconductor device according to claim 11 ,
wherein the first transistor is a p-channel transistor, and
wherein the second transistor is an n-channel transistor.
18. The semiconductor device according to claim 11 , further comprising a fifth transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to the other of the source and the drain of the third transistor.
19. An electronic device comprising:
the semiconductor device according to claim 11 ; and
a display device.
20. The semiconductor device according to claim 11 ,
wherein the gate of the first transistor and the gate of the second transistor are electrically connected to a first terminal of the circuit, and
wherein the other of the source and the drain of the third transistor is electrically connected to a second terminal of the circuit.