Substrate cleaning method, substrate cleaning system, and memory medium

1. A method for cleaning a substrate, comprising:

supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component;

vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cure on the substrate and forms on the hydrophilic surface of the substrate a processing film that captures and contains particles on the hydrophilic surface of the substrate;

supplying to the substrate having the processing film a strip-processing liquid which strips the processing film containing the particles from the hydrophilic surface of the substrate, wherein the strip-processing liquid separates the processing film from the hydrophilic surface by infiltrating between the processing film and the hydrophilic surface; and

when the processing film is separated from the hydrophilic surface and located above the hydrophilic surface, supplying to the processing film a dissolving-processing liquid which dissolves the processing film stripped by the strip-processing liquid such that the dissolving-processing liquid dissolves the processing film stripped by the strip-processing liquid,

wherein the substrate is one of a silicon wafer and a compound semiconductor wafer and wherein the film-forming processing liquid is a topcoat solution comprising resin and the volatile component,

wherein the dissolving-processing liquid is selected from the group consisting of an alkali developing solution having a first alkali concentration that dissolves the processing film into a liquid state, an isopropyl alcohol (IPA) and water solution having a first IPA concentration that dissolves the processing film into a liquid state, 4-methyl-2-pentanol, toluene, a glycol, an acetic acid solution, a formic acid solution, and a hydroxyacetic acid solution, and

wherein the strip-processing liquid is selected from the group consisting of pure water, an alkali developing solution having a second alkali concentration that is lower than the first alkali concentration, an IPA and water solution having a second IPA concentration that is lower than the first IPA concentration, and water mixed with CO 2 gas.

2. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is pure water.

3. The method for cleaning a substrate according to claim 1 , further comprising:

applying hydrophilic treatment to a surface of the substrate such that the hydrophilic surface of the substrate is formed prior to the supplying of the film-forming processing liquid.

4. The method for cleaning a substrate according to claim 1 , wherein the supplying of the film-forming processing liquid comprises supplying the film forming processing liquid to the substrate without a resist layer on the substrate.

5. The method for cleaning a substrate according to claim 1 , wherein the hydrophilic surface of the substrate has a pattern formed on the hydrophilic surface of the substrate, and the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the hydrophilic surface having the pattern.

6. The method for cleaning a substrate according to claim 2 , further comprising:

applying hydrophilic treatment to a surface of the substrate such that the hydrophilic surface of the substrate is formed prior to the supplying of the film-forming processing liquid.

7. The method for cleaning a substrate according to claim 2 , wherein the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the substrate without a resist layer on the substrate.

8. The method for cleaning a substrate according to claim 2 , wherein the hydrophilic surface of the substrate has a pattern formed on the hydrophilic surface of the substrate, and the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the hydrophilic surface having the pattern.

9. The method for cleaning a substrate according to claim 1 , further comprising:

applying hydrophilic treatment to a surface of the substrate such that the hydrophilic surface of the substrate is formed prior to the supplying of the film-forming processing liquid,

wherein the hydrophilic treatment comprises treating the surface of the substrate with ozone water.

10. The method for cleaning a substrate according to claim 1 ,

wherein the dissolving-processing liquid is an alkali developing solution having a concentration of 1.0% or higher.

11. The method for cleaning a substrate according to claim 1 , further comprising:

supplying a rinsing-treatment liquid after the processing film is dissolved by the dissolving-processing liquid such that the rinsing-treatment liquid rinses off the particles and the dissolving-processing liquid from the substrate.

12. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is the diluted isopropyl alcohol, and the dissolving-processing liquid is a second isopropyl alcohol solution having a concentration that is higher than a concentration of the diluted isopropyl alcohol.

13. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is an alkali developing solution having a concentration of 0.5% or less, and the dissolving-processing liquid is an alkali developing solution having a concentration of 1.0% or higher.

14. The method for cleaning a substrate according to claim 1 , wherein the resin in the topcoat solution comprises acrylic resin.

15. The method for cleaning a substrate according to claim 1 , wherein the particles have particle diameters of 100 nm or less, and the hydrophilic surface is a patterned surface.