Array substrate and manufacturing method thereof and display panel

1. A manufacturing method of an array substrate, comprising:

forming patterns of a thin film transistor, a planarization layer and a passivation layer on a base substrate, a pattern of the thin film transistor including patterns of a gate electrode, a gate insulation layer, an active layer and source and drain electrodes,

forming a pattern of a data line layer, the base substrate including a display region and a peripheral region that adjoins and surrounds the display region, the pattern of the data line layer including a pattern of a data line provided in the display region and a lead pattern provided in the peripheral region, the lead pattern of the data line layer including a plurality of first leads arranged along a first direction and a plurality of second leads arranged along a second direction, and the first direction and the second direction being two different directions on a plane in parallel to the base substrate,

wherein between the first leads or the second leads of the data line layer, a connection is realized by lead connection lines of the pixel electrode layer provided in the peripheral region,

wherein the first leads are disconnected and insulated from the second leads, the first leads or the second leads comprise disconnected portions, and the disconnected portions of the first leads or the second leads are connected by the lead connection lines of the pixel electrode layer provided in the peripheral region, and

wherein patterns of the planarization layer and the passivation layer are formed by one patterning process.

2. The method claimed as claim 1 , further comprising,

after the pattern of the passivation layer is formed, forming a pattern of a pixel electrode layer that is connected to the drain electrode.

3. The method claimed as claim 2 , further comprising forming a pattern of a common electrode layer on the pattern of the planarization layer, wherein, forming of the patterns of the planarization layer and the passivation layer includes:

forming a thin film of a planarization layer material on the pattern of the thin film transistor;

forming a thin film of a passivation layer material on the pattern of the common electrode layer;

with one patterning process, forming the thin film of the planarization layer material to the pattern of the planarization layer, and forming the thin film of the passivation layer material to the pattern of the passivation layer.

4. The method claimed as claim 3 , wherein forming of the patterns of the planarization layer and the passivation layer includes: forming a plurality of via holes in the thin film of the planarization layer material and the thin film of the passivation layer material.

5. The method claimed as claim 3 , wherein forming of the thin film of the planarization layer material to a pattern of the planarization layer and the thin film of the passivation layer material to a pattern of the passivation layer with one patterning process includes:

coating a layer of photoresist on the substrate with the thin film of the planarization layer material and the thin film of the passivation layer formed thereon;

conducting exposure of the photoresist with a mask, and then performing development on the exposed photoresist, so that a photoresist fully-retained region and a photoresist fully-removed region are formed after development, wherein the photoresist fully-removed region corresponds to region of the drain electrode, and a rest region is the photoresist fully-retained region;

removing the thin film of the planarization layer material and the thin film of the passivation layer material provided in the photoresist fully-removed region; and

removing the remaining photoresist.

6. The method claimed as claim 1 , further comprising forming a pattern of a common electrode layer on the pattern of the planarization layer, wherein, forming of the patterns of the planarization layer and the passivation layer includes:

forming a thin film of a planarization layer material on the pattern of the thin film transistor;

forming a thin film of a passivation layer material on the pattern of the common electrode layer;

with one patterning process, forming the thin film of the planarization layer material to the pattern of the planarization layer, and forming the thin film of the passivation layer material to the pattern of the passivation layer.

7. The method claimed as claim 6 , wherein forming of the patterns of the planarization layer and the passivation layer includes: forming a plurality of via holes in the thin film of the planarization layer material and the thin film of the passivation layer material.

8. The method claimed as claim 7 , further comprising:

forming a pattern of a common electrode layer with one patterning process on the thin film of the planarization layer material.

9. The method claimed as claim 6 , wherein forming of the thin film of the planarization layer material to a pattern of the planarization layer and the thin film of the passivation layer material to a pattern of the passivation layer with one patterning process includes:

coating a layer of photoresist on the substrate with the thin film of the planarization layer material and the thin film of the passivation layer formed thereon;

conducting exposure of the photoresist with a mask, and then performing development on the exposed photoresist, so that a photoresist fully-retained region and a photoresist fully-removed region are formed after development, wherein the photoresist fully-removed region corresponds to region of the drain electrode, and a rest region is the photoresist fully-retained region;

removing the thin film of the planarization layer material and the thin film of the passivation layer material provided in the photoresist fully-removed region; and

removing the remaining photoresist.

10. The method claimed as claim 1 , wherein a material for the planarization layer is a resin material.

11. The method claimed as claim 1 , wherein a material for the passivation layer is silicon nitride or a transparent, organic resin material.

12. The method claimed as claim 1 , further comprising forming a pattern of a common electrode layer on the pattern of the planarization layer, wherein, forming of the patterns of the planarization layer and the passivation layer includes:

forming a thin film of a planarization layer material on the pattern of the thin film transistor;

forming a thin film of a passivation layer material on the pattern of the common electrode layer;

with one patterning process, forming the thin film of the planarization layer material to the pattern of the planarization layer, and forming the thin film of the passivation layer material to the pattern of the passivation layer.

13. The method claimed as claim 12 , wherein forming of the patterns of the planarization layer and the passivation layer includes: forming a plurality of via holes in the thin film of the planarization layer material and the thin film of the passivation layer material.

14. The method claimed as claim 12 , wherein forming of the thin film of the planarization layer material to a pattern of the planarization layer and the thin film of the passivation layer material to a pattern of the passivation layer with one patterning process includes:

coating a layer of photoresist on the substrate with the thin film of the planarization layer material and the thin film of the passivation layer formed thereon;

conducting exposure of the photoresist with a mask, and then performing development on the exposed photoresist, so that a photoresist fully-retained region and a photoresist fully-removed region are formed after development, wherein the photoresist fully-removed region corresponds to region of the drain electrode, and a rest region is the photoresist fully-retained region;

removing the thin film of the planarization layer material and the thin film of the passivation layer material provided in the photoresist fully-removed region; and

removing the remaining photoresist.

15. An array substrate, comprising: a thin film transistor, a planarization layer and a passivation layer that are disposed on a base substrate, the thin film transistor including a gate electrode, a gate insulation layer, an active layer, and source and drain electrodes; a pixel electrode layer disposed on the passivation layer and connected to the drain electrode and a pattern of a data line layer disposed on the base substrate, the base substrate including a display region and a peripheral region that adjoins and surrounds the display region, the pattern of the data line layer including a pattern of a data line provided in the display region and a lead pattern provided in the peripheral region, the lead pattern of the data line layer including a plurality of first leads arranged along a first direction and a plurality of second leads arranged along a second direction, and the first direction and the second direction being two different directions on a plane in parallel to the base substrate,

wherein via holes in the planarization layer and the passivation layer in correspondence with the drain electrode are smoothly connected and between the first leads or the second leads of the data line layer, connection is realized by lead connection lines of the pixel electrode layer provided in the peripheral region, wherein the first leads are disconnected and insulated from the second leads, the first leads or the second leads comprise disconnected portions, and the disconnected portions of the first leads or the second leads are connected by the lead connection lines of the pixel electrode layer provided in the peripheral region.

16. The array substrate claimed as claim 15 , wherein the pattern of the data line layer is disposed in the same layer as the source and drain electrodes.

17. The array substrate claimed as claim 15 , wherein the pattern of the data line layer is disposed in the same layer as the gate electrode.

18. A display panel, comprising the array substrate claimed as claim 15 .