Semiconductor device and method of manufacturing the same
Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern.
1. A semiconductor device comprising:
a substrate;
an active pattern disposed on the substrate;
a gate electrode crossing the active pattern;
a gate dielectric layer disposed between the gate electrode and the active pattern;
a capping structure disposed on the gate electrode; and
gate spacers disposed on opposite sidewalls of the gate electrode,
wherein the capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode, and
wherein the second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern,
wherein top surfaces of the gate spacers are coplanar with a top surface of the second capping pattern, and
wherein the gate dielectric layer extends along opposite sidewalls of the gate electrode and contact a bottom surface of the first capping pattern.
2. The semiconductor device of claim 1 , wherein sidewalls of the first and second capping patterns are coplanar with each other.
3. The semiconductor device of claim 1 , wherein the first and second capping patterns have flat top surfaces.
4. The semiconductor device of claim 1 , wherein a width of the first capping pattern is substantially the same as that of the second capping pattern.
5. The semiconductor device of claim 1 , wherein the first capping pattern includes SiCN or SiOCN, and the second capping pattern includes SiN.
6. The semiconductor device of claim 1 , further comprising:
source and drain regions formed on the active pattern at both sides of the gate electrode; and
contacts disposed at both sides of the gate electrode to be electrically connected to the source and drain regions.
7. The semiconductor device of claim 6 , wherein the top surface of the second capping pattern is in contact with at least one of the contacts.
8. The semiconductor device of claim 1 , further comprising:
a device isolation layer defining the active pattern on the substrate,
wherein an upper portion of the active pattern protrudes from a lower portion of the active pattern that is located between parts of the device isolation layer, and
wherein the gate electrode crosses the upper portion of the active pattern and extends on the device isolation layer.
9. The semiconductor device of claim 1 ,
wherein the active pattern extends in a first direction parallel to a top surface of the substrate,
wherein the gate electrode and the capping structure extend in a second direction crossing the first direction, and
wherein when viewed in a plan view, the gate electrode overlaps the capping structure.
10. The semiconductor device of claim 1 , wherein the first capping pattern includes an internal air gap.
11. The semiconductor device of claim 10 , wherein a lower width of the air gap is greater than an upper width of the air gap.
12. The semiconductor device of claim 10 , wherein the air gap extends in a direction parallel to a top surface of the substrate along the gate electrode.
13. The semiconductor device of claim 1 , further comprising a contact disposed at one side of the gate electrode to contact a source or a drain region, wherein the contact comprises a conductive pillar and a barrier layer surrounding the conductive pillar.
14. A semiconductor device comprising:
a substrate including an active pattern;
a gate electrode crossing the active pattern; and
a first capping pattern covering a top surface of the gate electrode,
wherein the first capping pattern includes an internal air gap, and a lower width of the air gap is greater than an upper width of the air gap.
15. The semiconductor device of claim 14 , wherein when viewed in a plan view, the air gap is located at a center of the first capping pattern.
16. The semiconductor device of claim 14 , further comprising:
a second capping pattern covering a top surface of the first capping pattern,
wherein a dielectric constant of the second capping pattern is greater than that of the first capping pattern.
17. The semiconductor device of claim 14 , further comprising:
gate spacers on opposite sidewalls of the gate electrode,
wherein the gate spacers cover opposite sidewalls of the first and second capping patterns, and a top surface of the second capping pattern is coplanar with top surfaces of the gate spacers.
18. The semiconductor device of claim 14 ,
wherein the active pattern extends in a first direction parallel to a top surface of the substrate,
wherein the gate electrode and the first capping pattern extend in a second direction crossing the first direction, and
wherein the air gap which is located inside the first capping pattern, and extends in the second direction along the gate electrode.
19. A semiconductor device comprising:
a substrate including an active pattern;
a device isolation layer defining the active pattern;
a gate electrode crossing the active pattern; and
a first capping pattern covering a top surface of the gate electrode,
wherein an upper portion of the active pattern protrudes from a lower portion of the active pattern located between parts of the device isolation layer, and
wherein the first capping pattern includes an internal air gap having a first part with a first width and a second part with a second width, and
wherein the second part is closer to the substrate than the first part and the second width is larger than the first width.