IP Library › Granted Patent US 10,043,953
Granted Patent B2
US 10,043,953 · App. 15/246,807 · Granted Aug 7, 2018

Light emitting diode package

Inventor: Sang Uk Kim (Cheonan-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L33/504H01L33/505H01L33/508H01L33/60H01L33/486H01L2224/16225
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Quick Facts
Patent No.
US 10,043,953
App. No.
15/246,807
Granted
Aug 7, 2018
Kind
B2
Abstract

A light emitting diode (LED) package includes a package body; an LED chip above the package body; a first wavelength conversion layer containing a first wavelength conversion material, and an upper surface portion covering a part of an upper surface of the LED chip and a lateral portion covering side surfaces of the LED chip; and a second wavelength conversion layer containing a second wavelength conversion material different from the first wavelength conversion material, and covering the first wavelength conversion layer and a remaining part of the upper surface of the LED chip.

Claims (41)

1. A light emitting diode (LED) package comprising:

a package body;

an LED chip mounted above the package body, the LED chip comprising a light emitting structure and a substrate disposed on the light emitting structure and having a size equal to a size of the light emitting structure;

a first wavelength conversion layer containing a first wavelength conversion material, and comprising:

an upper surface portion disposed directly on a part of an upper surface of the substrate of the LED chip; and

a lateral portion disposed on four side surfaces of the LED chip; and

a second wavelength conversion layer containing a second wavelength conversion material different from the first wavelength conversion material,

wherein the second wavelength conversion layer is disposed on the first wavelength conversion layer, and is disposed directly on a remaining part of the upper surface of the substrate of the LED chip.

2. The LED package of claim 1 , wherein the lateral portion of the first wavelength conversion layer has a concavely inclined surface extending outwardly from upper edges of the LED chip to a portion of the package body.

3. The LED package of claim 1 , wherein the upper surface portion of the first wavelength conversion layer is disposed on only two upper vertexes, among a plurality of upper vertexes, of the LED chip opposite to each other in a diagonal direction.

4. The LED package of claim 1 , wherein the upper surface portion of the first wavelength conversion layer is not disposed on portions of two upper edges, among a plurality of upper edges, of the LED chip opposite to each other.

5. The LED package of claim 1 , wherein the upper surface portion of the first wavelength conversion layer has different thicknesses of which the greatest thickness is within a range of 10 μm to 40 μm.

6. The LED package of claim 1 , wherein an area of the upper surface portion of the first wavelength conversion layer is within a range of 85% to 95% of an area of the upper surface of the LED chip.

7. The LED package of claim 1 , wherein the first wavelength conversion layer further comprises a transparent resin, and an edge part of the lateral portion of the first wavelength conversion layer comprises a region including only the transparent resin among the transparent resin and the first wavelength conversion material.

8. The LED package of claim 1 , wherein the LED chip is mounted above the package body in a flip-chip form, and the first wavelength conversion layer fills a space between a lower surface of the LED chip and the package body.

9. The LED package of claim 1 , further comprising a reflective structure disposed above the package body,

wherein the reflective structure is inclined to reflect a light emitted from the second wavelength conversion layer in an upward direction, and

wherein the lateral portion of the first wavelength conversion layer has a concavely inclined surface extending outwardly from upper edges of the LED chip to a portion of the package body without contacting the reflective structure.

10. The LED package of claim 1 , wherein the LED chip is configured to emit a blue light, and

wherein the first wavelength conversion material contains a red phosphor, and the second wavelength conversion material contains a green phosphor.

11. A light emitting diode (LED) package comprising:

a package body;

an LED chip mounted above the package body, the LED chip comprising a light emitting structure and a substrate disposed on the light emitting structure and having a size equal to a size of the light emitting structure;

a first wavelength conversion layer containing a first wavelength conversion material, being disposed on at least side surfaces of the LED chip, and having a concavely inclined surface extending outwardly from upper edges of the side surfaces of the LED chip to a portion of the package body to be disposed on the side surfaces of the LED chip; and

a second wavelength conversion layer containing a second wavelength conversion material different from the first wavelength conversion material, and being disposed on the first wavelength conversion layer,

wherein the second wavelength conversion layer contacts the at least a part of an upper surface of the substrate of the LED chip, and

wherein the first wavelength conversion layer is directly disposed on a part of an upper surface of the substrate of the LED.

12. The LED package of claim 11 ,

wherein the first wavelength conversion layer is disposed on only a part of an upper surface of the LED chip, and

wherein the second wavelength conversion layer is disposed on a remaining part of the upper surface of the LED chip.

13. A light emitting diode (LED) package comprising:

a package body;

an LED chip mounted above the package body, the LED chip comprising a light emitting structure and a substrate disposed on the light emitting structure and having a size equal to a size of the light emitting structure;

a first wavelength conversion layer formed by dispensing a first resin containing a first wavelength conversion material over at least a part of an upper surface of the substrate of the LED chip such that the first resin is disposed directly on only a part of an upper surface of the substrate of the LED chip and entire side surfaces of the LED chip; and

a second wavelength conversion layer containing a second wavelength conversion material different from the first wavelength conversion material,

wherein the second wavelength conversion layer is disposed on the first wavelength conversion layer, and is disposed directly on a remaining part of the upper surface of the substrate of the LED chip.

14. The LED package of claim 13 , wherein the second wavelength conversion layer is formed by dispensing a second resin containing the second wavelength conversion material over the remaining part of the upper surface of the LED chip and the first wavelength conversion layer.

15. The LED package of claim 13 , wherein the second wavelength conversion layer is formed by molding the remaining part of the upper surface of the LED chip and the first wavelength conversion layer using a second resin containing the second wavelength conversion material.

16. The LED package of claim 13 , wherein the first wavelength conversion layer is formed by dispensing the first resin over two points of the upper surface of the LED chip opposite to each other in a diagonal direction.

17. The LED package of claim 13 , wherein the first wavelength conversion layer comprises a lateral portion having a concavely inclined surface extending outwardly from upper edges of the LED chip to a portion of the package body.

18. The LED package of claim 13 , wherein the first resin fills a space between a lower surface of the LED chip and the package body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 25, 2016
From: KIM, SANG UK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 039539/0289 →
Priority Claims (1)
KR 10-2015-0185286 · Dec 23, 2015 · national
Continuity (1)
Related Publication 20170186921A1 · Jun 29, 2017
Cited By (2)
US 12,199,218 US 12,546,458