Sputtering target with backside cooling grooves

1. A method of sputtering, comprising:

positioning a substrate in an enclosure having at least a sputtering target and a substrate support disposed therein;

introducing a sputtering gas into the enclosure;

energizing the sputtering gas to form a plasma; and

sputtering the sputtering target with the plasma to provide a sputtered target material to form a film layer on the substrate, wherein the sputtering target, comprises:

a circular sputtering plate, comprising:

a sputtering surface;

a backside surface opposite the sputtering surface, wherein the backside surface has a radially inner region, a radially middle region, and a radially outer region, the backside surface having:

a plurality of circular grooves which are spaced apart from one another; and

at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the circular sputtering plate;

an annular back surface opposite the sputtering surface;

an inclined outer peripheral wall that extends from an outer edge of the sputtering surface to an outer edge of the annular back surface;

an inner peripheral wall that extends from the backside surface to an inner edge of the annular back surface, wherein a recess that exposes the backside surface of the circular sputtering plate is defined by the backside surface and the inner peripheral wall; and

an annular-shaped backing plate mounted to the circular sputtering plate, wherein the annular-shaped backing plate comprises:

an annular-shaped body that defines an open annulus exposing the backside surface of the circular sputtering plate, the annular-shaped body defined by:

an annular front surface contacting the annular back surface of the circular sputtering plate;

an annular flange that extends beyond a radius of the circular sputtering plate, the annular flange comprising a peripheral circular surface having an outer footing for resting on a surface; and

an inner peripheral wall that extends from an inner edge of the annular front surface to the annular flange and aligns with the inner peripheral wall of the circular sputtering plate.

2. The method of claim 1 , wherein the circular grooves are concentric grooves.

3. The method of claim 2 , wherein the circular grooves comprise from about 20 to about 30 grooves.

4. The method of claim 1 , wherein all of the circular grooves are located at the radially middle region of the backside surface.

5. The method of claim 1 , wherein the backside surface has at least 8arcuate channels.

6. The method of claim 5 , wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees as measured from a center of the backside surface.

7. The method of claim 1 , wherein the annular-shaped backing plate comprises an alloy of copper and chrome.

8. The method of claim 1 , wherein the annular-shaped backing plate consists of a first material selected from A10.5Cu (wt %) alloy, A11.05Si (wt %) alloy, A10.5Cu1.0Si (wt %) alloy, aluminum, copper, chrome, titanium, tungsten, molybdenum, cobalt, tantalum, Li—P—O—N, germanium, GeS 2 , silicon, SiO 2 , quartz, and combinations thereof.

9. The method of claim 8 wherein the circular sputtering plate is composed of a second material selected from titanium or titanium nitride and the first material is different from the second material.

10. The method of claim 1 , further comprising:

flowing a reactive gas into the enclosure; and

reacting the reactive gas with the sputtered target material to form the film layer.

11. The method of claim 1 , wherein the annular-shaped backing plate is made from a material having a thermal conductivity from about 220 to about 400W/m K.

12. A method of sputtering, comprising:

positioning a substrate in an enclosure having at least a magnetron sputtering target and a substrate support disposed therein;

introducing a sputtering gas into the enclosure;

energizing the sputtering gas to form a plasma; and

sputtering the magnetron sputtering target with the plasma to provide a sputtered target material to form a film layer on the substrate, wherein the magnetron sputtering target, comprises:

a heat exchanger housing capable of holding a heat transfer fluid about a plurality of rotatable magnets; and

a sputtering target abutting the housing such that the heat transfer fluid contacts a backside surface of the magnetron sputtering target, the magnetron sputtering target comprising:

a circular sputtering plate, comprising:

a sputtering surface;

the backside surface opposite the sputtering surface, wherein the backside surface has a radially inner region, a radially middle region, and a radially outer region, the backside surface having:

a plurality of circular grooves which are spaced apart from one another; and

at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the circular sputtering plate;

an annular back surface opposite the sputtering surface;

an inclined outer peripheral wall that extends from an outer edge of the sputtering surface to an outer edge of the annular back surface;

an inner peripheral wall that extends from the backside surface to an inner edge of the annular back surface, wherein a recess that exposes the backside surface of the circular sputtering plate is defined by the backside surface and the inner peripheral wall; and

an annular-shaped backing plate mounted to the circular sputtering plate, wherein the annular-shaped backing plate comprises:

an annular-shaped body that defines an open annulus exposing the backside surface of the circular sputtering plate, the annular-shaped body defined by:

 an annular front surface contacting the annular back surface of the circular sputtering plate;

 an annular flange that extends beyond a radius of the circular sputtering plate, the annular flange comprising a peripheral circular surface having an outer footing for resting on a surface; and

 an inner peripheral wall that extends from an inner edge of the annular front surface to the annular flange and aligns with the inner peripheral wall of the circular sputtering plate.

13. The method of claim 12 , further comprising:

flowing the heat transfer fluid into the heat exchanger; and

rotating the plurality of rotatable magnets to circulate the heat transfer fluid.

14. The method of claim 12 , wherein the material of the backing plate is different from the material of the circular sputtering plate and at least one of the backing plate and the circular sputtering plate consists of a material selected from A10.5Cu (wt %) alloy, A11.0Si (wt %) alloy, A10.5Cu1.05Si (wt %) alloy, aluminum, copper, chrome, titanium, tungsten, molybdenum, cobalt, tantalum, Li—P—O—N, germanium, GeS 2 , silicon, SiO 2 , quartz, combinations thereof and alloys thereof.

15. The method of claim 12 , wherein the circular grooves are concentric grooves.

16. The method of claim 15 , wherein the circular grooves comprise from about 20 to about 30 grooves.

17. The method of claim 12 , wherein all of the circular grooves are located at the radially middle region of the backside surface.

18. The method of claim 12 , wherein the backside surface has at least 8 arcuate channels spaced apart from one another by an angle of from about 30 to about 90 degrees as measured from a center of the backside surface.

19. The method of claim 12 , further comprising:

flowing a reactive gas selected from an oxygen-containing gas and a nitrogen-containing gas into the enclosure; and

reacting the reactive gas with the sputtered target material to form the film layer.

20. The method of claim 12 , wherein the annular-shaped backing plate is made from a material having a thermal conductivity from about 220 to about 400W/m K.