Apparatus and method for wafer level bonding

1. A method comprising:

placing a first wafer onto a surface of a first wafer chuck, the first wafer chuck comprising a first plurality of profile control zones separated by one or more shared flexible membranes; and

setting a first profile of the surface of the first wafer chuck, the setting comprising: adjusting a first volume of a first profile control zone of the first plurality of profile control zones; and

adjusting a second volume of a second profile control zone of the first plurality of profile control zones, wherein the first volume of the first profile control zone is adjusted independently from the second volume of the second profile control zone, wherein the first volume and the second volume are isolated by a flexible sidewall, wherein the second adjustable volume encircles the first adjustable volume.

2. The method of claim 1 , wherein the setting of the first profile of the surface of the first wafer chuck sets a profile of a surface of the first wafer.

3. The method of claim 1 , further comprising placing a second wafer onto a second wafer chuck, the second wafer facing the first wafer.

4. The method of claim 3 , wherein the second wafer chuck comprises a plurality of profile control zones separated by one or more shared flexible membranes.

5. The method of claim 3 , further comprising setting a second profile of a surface of the second wafer.

6. The method of claim 3 , further comprising bonding the first wafer to the second wafer.

7. The method of claim 1 , wherein the adjusting of the first volume comprises pumping a gas into the first profile control zone.

8. A system comprising:

a chuck;

a profile control layer disposed on the chuck, the profile control layer comprising a plurality of control zones, wherein adjacent control zones of the plurality of control zones are separated and isolated by at least one flexible sidewall shared between the respective adjacent control zones, and wherein a first control zone of the plurality of control zones encircles a second control zone of the plurality of control zones, wherein the first profile control zone is adjusted independently from the second profile control zone; and

a vacuum distribution layer disposed on the profile control layer, wherein the vacuum distribution layer is configured to hold a first wafer.

9. The system of claim 8 , wherein at least two of the control zones of the plurality of control zones have independently adjustable volumes.

10. The system of claim 8 , wherein a surface profile of the vacuum distribution layer is adjustable by adjusting a volume of a control zone of the plurality of control zones.

11. The system of claim 10 , wherein the adjusting of the volume of the control zone of the plurality of control zones adjusts a surface profile of the first wafer.

12. The system of claim 10 , wherein the volume of the control zone is adjusted by a liquid pumped into the first control zone.

13. The system of claim 8 , wherein the chuck comprises thermal controllers configured to control the temperature of the profile control layer.

14. A method of bonding wafers, the method comprising:

mounting a first wafer onto a first wafer chuck, the first wafer chuck comprising a second flexible chamber encircling a first flexible chamber, the first flexible chamber separated and isolated from the second flexible chamber by a shared flexible wall;

adjusting a first volume of the first flexible chamber independently of a second volume of the second flexible chamber to set a first profile of the first wafer;

mounting a second wafer onto a second wafer chuck; and bonding the first wafer to the second wafer.

15. The method of claim 14 , further comprising setting a second profile of the second wafer.

16. The method of claim 15 , wherein the second wafer chuck comprises an extendable pin, and wherein setting a second profile of the second wafer comprises impinging the pin on a surface of the second wafer.

17. The method of claim 14 , wherein the first profile of the first wafer is substantially planar.

18. The method of claim 14 , further comprising aligning the first wafer to the second wafer.

19. The method of claim 14 , further comprising adjusting the second volume of the second flexible chamber.

20. The method of claim 14 , wherein the bonding of the first wafer to the second wafer comprises heating the first wafer.