Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.
1. A method of treating a substrate, comprising:
positioning the substrate in a process chamber, the substrate having a interconnect formed thereon, the interconnect including a conductive material having one or more of a seam or a void therein;
heating the substrate to a temperature of about 300 degrees Celsius to about 400 degrees Celsius; and
exposing the substrate to hydrogen-containing atmosphere at a pressure of about 12 bar to about 50 bar.
2. The method of claim 1 , wherein the hydrogen-containing atmosphere includes hydrogen present within a range of about 3.5 atomic percent to about 4.5 atomic percent.
3. The method of claim 1 , wherein the hydrogen-containing atmosphere further comprises diatomic nitrogen or argon.
4. The method of claim 1 , wherein the hydrogen-containing atmosphere includes hydrogen present within a range of about 1 atomic percent to about 100 atomic percent.
5. The method of claim 1 , further comprising healing the seam or void.
6. The method of claim 1 , wherein the interconnect further comprises grain boundaries.
7. The method of claim 6 , further comprising reducing the grain boundaries.
8. A method of treating a substrate, comprising:
positioning the substrate in a process chamber, the substrate having a interconnect formed thereon, the interconnect including a conductive material having one or more of a seam or a void therein;
heating the substrate to a temperature of about 250 degrees Celsius to about 400 degrees Celsius; and
exposing the substrate to hydrogen-containing atmosphere at a pressure of about 12 bar to about 50 bar.
9. The method of claim 8 , wherein the interconnect further comprises grain boundaries, and wherein the hydrogen-containing atmosphere has a pressure within a range of about 12 bar to about 20 bar.
10. The method of claim 9 , wherein the hydrogen-containing atmosphere further comprises diatomic nitrogen or argon.
11. The method of claim 10 , wherein the substrate is heated to a temperature within a range of about 300 degrees Celsius to about 400 degrees Celsius, and wherein the hydrogen-containing atmosphere has a pressure within a range of about 12 bar to about 15 bar.
12. The method of claim 11 , wherein the hydrogen-containing atmosphere includes hydrogen present within a range of about 3.5 atomic percent to about 4.5 atomic percent.
13. The method of claim 12 , further comprising reducing the grain boundaries.
14. The method of claim 13 , further comprising healing the seam or void.
15. A method of treating a substrate, comprising:
forming an interconnect on a substrate, the interconnect including a conductive material having one or more of a seam or a void therein;
after forming the interconnect, healing the one or more of a seam or a void, the healing comprising:
heating the substrate to a temperature of about 250 degrees Celsius to about 400 degrees Celsius; and
exposing the substrate to hydrogen-containing atmosphere at a pressure of about 12 bar to about 20 bar.
16. The method of claim 15 , wherein the hydrogen-containing atmosphere includes hydrogen present within a range of about 1 atomic percent to about 100 atomic percent.
17. The method of claim 16 , wherein the hydrogen-containing atmosphere further comprises diatomic nitrogen, and wherein the hydrogen is present within a range of about 3.5 atomic percent to about 4.5 atomic percent.
18. The method of claim 17 , wherein the substrate is heated to a temperature within a range of about 300 degrees Celsius to about 400 degrees Celsius.
19. The method of claim 16 , wherein the hydrogen-containing atmosphere is driven into the seam or void via pressure to remove contaminants from within the seam or void.
20. The method of claim 19 , wherein the substrate is heated to a temperature within a range of about 300 degrees Celsius to about 400 degrees Celsius.