Die device, semiconductor device and method for making the same
A die device includes a die including an active layer; and an interconnect feature configured for electrical connection of the active layer, wherein the interconnect feature is in contact with a substrate in the die; and a bump, independent of the die, configured for electrical connection of the active layer.
1. A semiconductor device, comprising:
a first die device including:
a first die including:
a first active layer; and
a first interconnect feature configured for electrical connection of the first active layer; and
a second die device including:
a second die including:
a second active layer; and
a bump, independent of the second die, configured for electrical connection of the second active layer, wherein the bump is surrounded by the first interconnect feature.
2. The semiconductor device of claim 1 , wherein the bump is in contact with the first interconnect feature.
3. The semiconductor device of claim 2 , further comprising:
an adhesive layer by which the second die device is bonded to the first die device.
4. The semiconductor device of claim 3 , wherein the second die device is on the adhesive layer, and the adhesive layer is on the first die device.
5. The semiconductor device of claim 3 , wherein a distance between the first die device and the second die device is substantially the same as a thickness of the adhesive layer.
6. The semiconductor device of claim 3 , wherein a portion of the bump is surrounded by the first interconnect feature, and the remaining portion of the bump is surrounded by the adhesive feature.
7. The semiconductor device of claim 1 , wherein a melting point of the first interconnect feature is lower than that of copper.
8. The semiconductor device of claim 1 , wherein a material of the first interconnect feature includes stannum (Sn).
9. The semiconductor device of claim 1 , wherein the bump is the second bump, the first die device further including:
a first bump, independent of the first die, configured for electrical connection of the first active layer.
10. The semiconductor device of claim 9 , wherein the first bump is on a first surface of the first die, and the first die device is free of another bump on a second surface of the first die opposite to the first surface.
11. The semiconductor device of claim 10 , wherein the first active layer is within the first surface of the first die.
12. The semiconductor device of claim 10 , wherein the first bump is on the first active layer of the first die.
13. A method, comprising:
obtaining a first die device and a second die device by performing an operation twice, the operation including:
forming an active layer in and on a substrate;
forming a bump on the active layer;
forming a trench in the substrate, exposing the active layer; and
forming a polished conductive layer in the trench and on the active layer; and
inserting the bump of the second die device into the polished conductive layer of the first die device.
14. The method of claim 13 , further comprising:
forming a melted-and-polished conductive layer by melting the polished conductive layer, wherein a melting point of the polished conductive layer is lower than that of copper.
15. The method of claim 13 , wherein the inserting the bump of the second die device into the polished conductive layer of the first die device includes:
inserting the bump of the second die device into the melted-and-polished conductive layer of the first die device.