Semiconductor device

1. A semiconductor device, comprising:

a semiconductor substrate;

a super junction MOSFET having a repetitive structure of a first column including first conductivity-type impurities and a second column including second conductivity-type impurities, each of the first column and the second column being provided extending in a direction from one main surface toward the other main surface of the semiconductor substrate;

a parallel device having a drift region including second conductivity-type impurities, the parallel device being provided separately from the super junction MOSFET in the semiconductor substrate; and

a boundary portion located between the super junction MOSFET and the parallel device in the semiconductor substrate, wherein

the boundary portion extends in a direction from the one main surface toward the other main surface, and has at least one third column having first conductivity-type impurities, and

a depth of the third column is shallower than a depth of the first column and shallower than a depth of the second column.

2. The semiconductor device according to claim 1 , wherein

the boundary portion has a plurality of the third columns in different positions of the semiconductor substrate in an outer direction directed from the super junction MOSFET toward the parallel device, and

the depth of the plurality of the third columns becomes gradually shallower toward the outer direction.

3. The semiconductor device according to claim 2 , further comprising:

a fourth column having second conductivity-type impurities between the third columns adjacent to each other of the plurality of the third columns, wherein

a concentration of the second conductivity-type impurities of the fourth column is equal to or greater than a concentration of the second conductivity-type impurities in the drift region, and

a concentration of the first conductivity-type impurities in the plurality of the third columns is equal to or greater than the concentration of the second conductivity-type impurities in the drift region.

4. The semiconductor device according to claim 3 , wherein

a depth of the fourth column is smaller than the depth of the third column adjacent thereto in a reverse direction of the outer direction, and

the third column has a protruding region protruding in the outer direction at a deepest portion of the third column.

5. The semiconductor device according to claim 4 , wherein the protruding region does not contact the fourth column adjacent thereto in the outer direction.

6. The semiconductor device according to claim 3 , wherein a depth of the fourth column is equal to the depth of the third column adjacent thereto in the outer direction.

7. The semiconductor device according to claim 3 , wherein the boundary portion has two sets of the third column and the fourth column having the same depth consecutively in the outer direction at an end portion of the outer direction.

8. The semiconductor device according to claim 1 , wherein

the super junction MOSFET further includes a buffer region at the other main surface having second conductivity-type impurities, and

an end portion of the buffer region at a side of the boundary portion extends beyond the first column and the second column in the SJ MOSFET which are closest to the boundary portion.

9. The semiconductor device according to claim 1 , wherein the super junction MOSFET further includes:

a base region having first conductivity-type impurities, the base region being located on the repetitive structure of the first column and the second column;

a source region having second conductivity-type impurities, the source region including a portion of an outermost surface of the base region;

a source electrode provided on the base region, the source electrode being electrically connected to the source region, and;

a surface region having a concentration of second conductivity-type impurities lower than that of the source region, the surface region being provided in a region which is on the outermost surface of the base region and is different from the source region, and being electrically connected to the source electrode provided on the base region; and

a first isolation trench extending downward from a portion of the surface region until it reaches a boundary between the second column and the first column adjacent to the second column.

10. The semiconductor device according to claim 9 , wherein the boundary portion includes:

the base region provided extending from the super junction MOSFET;

the surface region provided extending from the super junction MOSFET; and

a second isolation trench provided extending downward from a portion of the surface region until it reaches any of the third column, a fourth column, and a boundary of the third column and the fourth column adjacent to each other.

11. The semiconductor device according to claim 1 , wherein the parallel device is either a freewheeling diode or an IGBT.

12. The semiconductor device according to claim 11 , wherein

the parallel device is the freewheeling diode,

the semiconductor device further comprises:

the IGBT adjacent to the freewheeling diode in the outer direction directed from the super junction MOSFET toward the freewheeling diode; and

an edge termination structure adjacent to the IGBT in the outer direction,

wherein the super junction MOSFET, the boundary portion, the freewheeling diode, and the IGBT are provided in the semiconductor substrate, wherein the semiconductor substrate is a single substrate.

13. The semiconductor device according to claim 1 , wherein

the third column has a protruding region protruding in an outer direction at a deepest portion of the third column.