Semiconductor device including a LDMOS transistor and method
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer.
1. A semiconductor device, comprising:
a semiconductor substrate comprising a substantially planar front surface,
a LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the front surface; and
a metallization structure arranged on the front surface,
wherein the metallization structure comprises at least one cavity arranged in at least one dielectric layer, wherein the at least one cavity is positioned above, and spaced apart from, the front surface,
wherein the metallization structure further comprises a first dielectric layer arranged on the front surface, a first conductive layer arranged on the first dielectric layer and at least one first conductive via, wherein the at least one cavity is arranged adjacent a side face of the at least one first conductive via,
wherein the at least one cavity extends through the first dielectric layer and is bounded on a lower surface by a second dielectric layer and on an upper surface by a third dielectric layer, wherein the third dielectric layer comprises a plurality of openings in communication with the at least one cavity, the plurality of openings being covered by a fourth dielectric layer,
wherein the first dielectric layer comprises three sublayers, the first sublayer comprising BPSG, the second sublayer comprising SiN and the third sublayer comprising SiOx, and wherein the second dielectric layer comprises SiON, the third dielectric layer comprises SiN and the fourth dielectric layer comprises SiO x .
2. The semiconductor device of claim 1 , wherein the at least one cavity is defined by dielectric material on all sides.
3. The semiconductor device of claim 1 , wherein the at least one cavity is arranged in regions of the metallization structure having an electric field that is greater than an average electric field of the semiconductor device.
4. The semiconductor device of claim 1 , wherein the at least one cavity is arranged between a drain region and a gate of the LDMOS transistor so as to reduce capacitive coupling.
5. The semiconductor device of claim 1 , wherein the at least one first conductive via electrically couples a drain of the LDMOS transistor to the first conductive layer.
6. The semiconductor device of claim 1 , wherein a first cavity is arranged adjacent a first side of the at least one first conductive via and a second cavity is arranged adjacent a second side of the at least one first conductive via, the second side opposing the first side.
7. The semiconductor device of claim 1 , wherein the at least one cavity is arranged between drain-sided edge of a field plate and a drain region of the LDMOS transistor.
8. The semiconductor device of claim 1 , wherein a first plurality of cavities is arranged in a first row adjacent a first side face of a conductive via extending though the at least one dielectric layer.
9. The semiconductor device of claim 8 , wherein a second plurality of cavities is arranged in a second row adjacent a second side face of the conductive via extending though the first dielectric layer, the second side face opposing the first side face.
10. The semiconductor device of claim 1 , wherein the semiconductor substrate has a bulk resistivity ρ≥100 Ohm·cm.
11. The semiconductor device of claim 10 , further comprising a conductive via extending from the front surface to a rear surface of the semiconductor substrate, the conductive via being coupled to a source of the LDMOS transistor.
12. A semiconductor device, comprising:
a semiconductor substrate comprising a substantially planar front surface,
a LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the front surface; and
a metallization structure arranged on the front surface,
wherein the metallization structure comprises at least one cavity arranged in at least one dielectric layer, wherein the at least one cavity is positioned above, and spaced apart from, the front surface,
wherein the metallization structure further comprises a first dielectric layer arranged on the front surface, a first conductive layer arranged on the first dielectric layer and at least one first conductive via, wherein the at least one cavity is arranged adjacent a side face of the at least one first conductive via,
wherein the at least one cavity extends through the first dielectric layer and is bounded on a lower surface by a second dielectric layer and on an upper surface by a third dielectric layer, wherein the third dielectric layer comprises a plurality of openings in communication with the at least one cavity, the plurality of openings being covered by a fourth dielectric layer,
wherein the semiconductor device further comprises at least one third cavity in a fifth dielectric layer arranged on the fourth dielectric layer.
13. The semiconductor device of claim 12 , further comprising a second conductive via extending through the fifth dielectric layer, wherein the at least one third cavity is arranged adjacent a side face of the second conductive via.
14. The semiconductor device of claim 13 , wherein the second conductive via is integral with a runner arranged on the fifth dielectric layer.