Semiconductor wafer device and manufacturing method thereof
A method of dies singulation includes providing a carrier, disposing a plurality of dies over a surface of the carrier according to a plurality of scribe lines comprising a plurality of continuous lines along a first direction and a plurality of discontinuous lines along a second direction, cutting the carrier according to the plurality of continuous lines along the first direction, and cutting the carrier according to the plurality of discontinuous lines along the second direction.
1. A method of dies singulation, comprising:
providing a carrier;
disposing a plurality of dies on a surface of the carrier according to a plurality of scribing lines comprising a plurality of continuous lines along a first direction and a plurality of discontinuous lines along a second direction;
cutting the carrier according to the plurality of continuous lines along the first direction; and
cutting the carrier according to the plurality of discontinuous lines along the second direction,
wherein the cutting the carrier is performed by turning a laser beam on and off alternately according to the plurality of discontinuous lines along the second direction, and the laser beam is turned off by turning on a shutter when the laser beam passes through the surface of the carrier where the plurality of discontinuous lines are absent from the surface of the carrier.
2. The method of claim 1 , wherein the first direction is substantially orthogonal to the second direction.
3. The method of claim 1 , further comprising rotating the carrier at about a right angle relative to the first direction before the cutting the carrier according to the plurality of discontinuous lines along the second direction.
4. The method of claim 1 , wherein each of the plurality of dies is formed by two respective portions of two of the plurality of continuous lines and two respective portions of two of the plurality of discontinuous lines.
5. The method of claim 1 , wherein each of the plurality of continuous lines is across the surface of the carrier from a side of the carrier to another opposite side of the carrier.
6. The method of claim 1 , wherein the laser beam is turned on by turning off the shutter when the laser beam passes through the plurality of discontinuous lines.
7. The method of claim 1 , wherein the laser beam cuts the carrier in a width of about 20 micrometers (μm).
8. A method of dies singulation, comprising:
providing a carrier;
forming a plurality of scribe lines over the carrier, the plurality of scribe lines comprising a plurality of continuous lines along a first direction and a plurality of discontinuous lines along a second direction substantially orthogonal to the first direction;
disposing a plurality of dies on a surface of the carrier between the scribing lines;
cutting the carrier according to the plurality of continuous lines along the first direction; and
cutting the carrier according to the plurality of discontinuous lines along the second direction,
wherein the cutting the carrier is performed by turning a laser beam on and off alternately according to the plurality of discontinuous lines along the second direction, and the laser beam is turned off by turning on a shutter when the laser beam passes through the surface of the carrier where the plurality of discontinuous lines are absent from the surface of the carrier.
9. The method of claim 8 , further comprising rotating the carrier at about a right angle relative to the first direction before the cutting the carrier according to the plurality of discontinuous lines along the second direction.
10. The method of claim 8 , wherein each of the plurality of dies is formed by two respective portions of two of the plurality of continuous lines and two respective portions of two of the plurality of discontinuous lines.
11. The method of claim 8 , wherein the laser beam is turned on by turning off the shutter when the laser beam passes through the plurality of discontinuous lines of the plurality of scribe lines.
12. The method of claim 8 , wherein the laser beam cuts the carrier in a width of about 20 micrometers (μm).
13. A method of dies singulation, comprising:
providing a carrier;
disposing a plurality of dies on a surface of the carrier, and the plurality of dies being disposed in a staggered configuration;
providing a laser beam to continuously cut the carrier along a first direction; and
providing the laser beam to discontinuously cut the carrier along a second direction substantially orthogonal to the first direction,
wherein the laser beam is turned on and off alternately to discontinuously cut the carrier, and the laser beam is turned off by turning on a shutter.
14. The method of claim 13 , further comprising rotating the carrier at about a right angle relative to the first direction before discontinuously the cutting the carrier along the second direction.
15. The method of claim 13 , wherein the staggered configuration comprises a plurality of continuous lines along the first direction and a plurality of discontinuous lines along the second direction.
16. The method of claim 15 , wherein each of the plurality of dies is formed by two respective portions of two of the plurality of continuous lines and two respective portions of two of the plurality of discontinuous lines.
17. The method of claim 15 , further comprising turning wherein the laser beam is turned on and off alternately during the discontinuously cutting the carrier along the second direction according to the plurality of discontinuous lines.
18. The method of claim 17 , wherein the laser beam is turned off by turning on the shutter when the laser beam passes through the surface of the carrier where the plurality of discontinuous lines are absent from the surface of the carrier.
19. The method of claim 17 , wherein the laser beam is turned on by turning off the shutter when the laser beam passes through the plurality of discontinuous lines.
20. The method of claim 13 , wherein the laser beam cuts the carrier in a width of about 20 micrometers (μm).