High durability extreme ultraviolet photomask
The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than a kinetic diameter of oxygen (O2); and
an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
2. The reflective mask of claim 1 , wherein the average interatomic distance of the anti-oxidation barrier layer is less than 3 angstrom.
3. The reflective mask of claim 1 , wherein the anti-oxidation barrier layer has a reflectivity greater than 0.67 to an extreme ultraviolet (EUV) light.
4. The reflective mask of claim 1 , wherein the anti-oxidation barrier layer includes an alloy of ruthenium and platinum (RuPt alloy).
5. The reflective mask of claim 4 , wherein the RuPt alloy of the anti-oxidation barrier layer has a Ru:Pt mass ratio in a range from 1:1 to 3.5:1.
6. The reflective mask of claim 1 , wherein
the anti-oxidation barrier layer includes at least one of titanium, silicon and zirconium;
the anti-oxidation barrier layer includes a first portion covered by the absorber layer and a second portion uncovered by the absorber layer;
the second portion of the anti-oxidation barrier layer is doped by at least one of oxygen and nitrogen; and
the first portion of the anti-oxidation barrier layer is not doped by any of oxygen and nitrogen.
7. The reflective mask of claim 1 , wherein the substrate includes a low thermal expansion material (LTEM); and the LTEM is selected from the group consisting of fused silica, titanium oxide (TiO2) doped fused silica (SiO2), fused quartz, calcium fluoride (CaF2), and a combination thereof.
8. The reflective mask of claim 1 , wherein the reflective multilayer includes a plurality of alternating molybdenum-silicon (Mo/Si) films.
9. The reflective mask of claim 1 , wherein the reflective multilayer includes a plurality of alternating molybdenum-beryllium (Mo/Be) films.
10. The reflective mask of claim 1 , wherein the absorber layer includes a material selected from the group consisting of tantalum boron nitride (TaBN), chromium (Cr), chromium oxide (CrO), titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta), titanium (Ti), or aluminum-copper (Al-Cu), palladium, aluminum oxide (AlO), molybdenum (Mo).
11. The reflective mask of claim 1 , further comprising a protective layer formed on the absorber layer, wherein the protective layer and the absorber layer are both patterned according to the integrated circuit layout.
12. The reflective mask of claim 1 , wherein the anti-oxidation barrier layer includes an alloy of ruthenium and a metal selected from the group consisting of Po, Hg, Os, Rh, Pd, Ir, and Pt.
13. A reflective mask, comprising:
a substrate of a low thermal expansion material;
a reflective multilayer formed on the substrate, wherein the reflective multilayer includes a plurality of alternating molybdenum-silicon (Mo/Si) films having a top Mo film;
a capping layer of a material formed on the reflective multilayer, wherein the capping layer is disposed on and directly contacts the top Mo film of the reflective multilayer, and wherein the material includes an alloy of ruthenium and a metal selected from the group consisting of Po, Hg, Os, Rh, Pd, Ir, and Pt; and
an absorber layer disposed on the capping layer and patterned according to an integrated circuit layout.
14. The reflective mask of claim 13 , wherein the metal of the alloy is Pt and the alloy has a Ru:Pt mass ratio in a range from 1:1 to 3.5:1.
15. A reflective mask, comprising:
a substrate of a low thermal expansion material;
a reflective multilayer formed on the substrate, wherein the reflective multilayer includes a plurality of alternating molybdenum-silicon (Mo/Si) films having a top Mo film;
a capping layer of a material formed on the reflective multilayer, wherein the capping layer is disposed on and directly contacts the top Mo film of the reflective multilayer, and wherein the material includes at least one of titanium, silicon and zirconium; and
an absorber layer disposed on the capping layer and patterned according to an integrated circuit layout.
16. The reflective mask of claim 15 , wherein
the absorber layer includes an opening;
the capping layer includes a first portion within the opening and a second portion covered by the absorber layer; and
the first portion of the capping layer is doped with at least one of oxygen and nitrogen and the second portion of the capping layer is not doped by any of oxygen and nitrogen.
17. A mask comprising:
a mask substrate;
a reflective structure disposed on the mask substrate;
an anti-oxidation capping layer disposed on the reflective structure, wherein the anti-oxidation capping layer includes an alloy of ruthenium and a metal selected from the group consisting of Po, Hg, Os, Rh, Pd, Ir, and Pt; and
an absorber layer disposed on the anti-oxidation capping layer.
18. The mask of claim 17 , wherein the alloy of the anti-oxidation capping layer has an amorphous structure.
19. The mask of claim 17 , wherein the anti-oxidation capping layer has an average interatomic distance less than a kinetic diameter of oxygen (O2).
20. The mask of claim 17 , wherein the anti-oxidation capping layer has a thickness between about 2.5 nm and about 4 nm.