Double-faced cooling-type power module

1. A double-facing cooling-type power module, comprising:

a first switch having coolers on both sides;

a second switch disposed independently from the first switch and having the coolers on both sides; and

a common electrode coupled to both the first switch and the second switch,

wherein the first switch is formed by stacking a first semiconductor chip and the common electrode between a first substrate and a third substrate,

wherein the second switch is formed by stacking the common electrode and a second semiconductor chip between the third substrate and a second substrate,

wherein the common electrode is stacked in both the first switch and the second switch,

wherein the common electrode is disposed apart from the first to third substrates,

wherein the first semiconductor chip is disposed on a bottom side of the common electrode and the second semiconductor chip is disposed on a top side of the common electrode.

2. The power module of claim 1 , wherein the first switch and the second switch are formed in opposite shapes, and the first substrate of the first switch and the third substrate of the second switch are positioned in the same plane.

3. The power module of claim 1 , wherein the first substrate, the first semiconductor chip, the common electrode, and the third substrate of the first switch are bonded by soldering, and

the third substrate, the common electrode, the second semiconductor chip, and the second substrate of the second switch are bonded by soldering.

4. The power module of claim 1 , wherein the first substrate of the first switch and the third substrate of the second switch are separate substrates, and

the third substrate of the first switch and the second substrate of the second switch are separate substrates.

5. The power module of claim 4 , wherein the first substrate is made wider than the third substrate in the first switch, and

the third substrate is made wider than the second substrate in the second switch.

6. The power module of claim 1 , wherein the first, second, and third substrates are each composed of an outer layer made of copper or aluminum, an inner layer made of copper or aluminum and being in contact with the first semiconductor chip, the second semiconductor chip, or the common electrode, and an intermediate layer made of ceramic between the outer layer and the inner layer,

the outer layer and the intermediate layer are integrated and the inner layer is divided, in the first substrate of the first switch and the third substrate of the second switch, and

the outer layer and the intermediate layer are integrated and the inner layer is divided, in the third substrate of the first switch and the second substrate of the second switch.

7. The power module of claim 6 , wherein a substrate formed by integrating the first substrate of the first switch and the third substrate of the second switch is made wider than a substrate formed by integrating the third substrate of the first switch and the second substrate of the second switch.

8. The power module of claim 1 , wherein the first switch and the second switch are sealed by a sealant made of an epoxy-molding compound or a silicon gel.

9. The power module of claim 1 , further comprising wires connected to the first semiconductor chip and the second semiconductor chip, respectively, to transmit and receive signals.

10. The power module of claim 1 , wherein the common electrode is a lead frame or a thin plate made of copper or aluminum.