DMTJ structure for sub-25NM designs with cancelled flowering field effects

1. A magnetic memory device, comprising:

a first reference magnetic layer;

a first tunnel barrier layer on the first reference magnetic layer;

a second tunnel barrier layer;

a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer; and

a second reference magnetic layer on the second tunnel barrier layer,

wherein the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack in a first direction and a width of the first tunnel barrier layer, a width of the free magnetic layer, a width of the second tunnel barrier layer and a width of the second reference magnetic layer in a second direction are less than about 30 nm, the second direction being substantially perpendicular to the first direction, so that the free magnetic layer has a magnitude of an in-plane magnetostatic field of less than about 500 Oe at an edge of the free magnetic layer,

wherein the first reference magnetic layer comprises:

a first pinned magnetic layer;

a first polarization enhancement layer; and

a first texture blocking layer between the first pinned magnetic layer and the first polarization enhancement layer,

wherein the first texture blocking layer includes Ta, W, Mo, Nb, Ir, or Os, and

wherein the second reference magnetic layer comprises:

a second pinned magnetic layer;

a second polarization enhancement layer; and

a second texture blocking layer between the second pinned magnetic layer and the second polarization enhancement layer, and

wherein the second texture blocking layer includes Ta, W, Mo, Nb, Ir, or Os,

wherein the first pinned magnetic layer and the second pinned magnetic layer includes Co/Pt, Co/Pd, Co/Ir, Co/Ru, Co/Os, Fe/W, Co/W or Co/Ni with a thickness of between about 1.5 nm and about 15 nm.

2. The magnetic memory device according to claim 1 , wherein the first pinned magnetic layer and the first polarization enhancement layer are anti-ferromagnetically coupled.

3. The magnetic memory device according to claim 1 , wherein the first pinned magnetic layer is a pinned ferrimagnetic layer and the second pinned magnetic layer is a pinned ferrimagnetic layer.

4. The magnetic memory device according to claim 1 , further comprising a self-initializing magnetic layer on the second tunnel barrier layer.

5. The magnetic memory device according to claim 1 ,

wherein a width of the first reference magnetic layer in the second direction is greater than or equal to about three times a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer in the second direction is less than about 30 nm.

6. A magnetic memory device, comprising:

a first reference magnetic layer;

a first tunnel barrier layer on the first reference magnetic layer;

a second tunnel barrier layer;

a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer;

a second reference magnetic layer on the second tunnel barrier layer,

wherein the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer, and the second reference magnetic layer are arranged as a stack in a first direction,

wherein a width of the first tunnel barrier layer, a width of the free magnetic layer, a width of the second tunnel barrier layer and a width of the second reference magnetic layer in a second direction are less than about 30 nm, the second direction being substantially perpendicular to the first direction, wherein a magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe,

wherein the first reference magnetic layer comprises:

a first pinned magnetic layer;

a first polarization enhancement layer; and

a first texture blocking layer between the first pinned magnetic layer and the first polarization enhancement layer,

wherein the first texture blocking layer includes Ta, W, Mo, Nb, Ru, Cr, Ir, Os or Rh, and

wherein the first pinned magnetic layer includes Co/Pt, Co/Pd, Co/Ir, Co/Ru, Co/Os, Fe/W, Co/W or Co/Ni with a thickness of between about 1.5 nm and about 15 nm.

7. The magnetic memory device according to claim 6 ,

wherein the first pinned magnetic layer and the first polarization enhancement layer are anti-ferromagnetic ally coupled.

8. The magnetic memory device according to claim 6 , wherein the second reference magnetic layer comprises: a second pinned magnetic layer;

a second polarization enhancement layer; and

a second texture blocking layer between the second pinned magnetic layer and the second polarization enhancement layer.

9. The magnetic memory device according to claim 8 ,

wherein the first pinned magnetic layer is a pinned ferrimagnetic layer and the second pinned magnetic layer is a pinned ferrimagnetic layer.

10. The magnetic memory device according to claim 6 , further comprising a self-initializing magnetic layer on the second tunnel barrier layer.

11. The magnetic memory device according to claim 6 , wherein a width of the first reference magnetic layer in the second direction is greater than or equal to about three times a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer in the second direction is less than about 30 nm.

12. A memory device, comprising:

a plurality of memory cells arranged in an array; and

an interface coupled to the plurality of memory cells to receive data to be stored in at least one memory cell and to output data from at least one memory cell,

at least one memory cell comprising a magnetic memory device, comprising:

a first reference magnetic layer;

a first tunnel barrier layer on the first reference magnetic layer;

a second tunnel barrier layer;

a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer; and

a second reference magnetic layer on the second tunnel barrier layer,

wherein the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack in a first direction, and a width of the first tunnel barrier layer, a width of the free magnetic layer, a width of the second tunnel barrier layer and a width of the second reference magnetic layer in a second direction are less than about 30 nm, the second direction being substantially perpendicular to the first direction, so that a magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe,

wherein the second reference magnetic layer comprises:

a second pinned magnetic layer;

a second polarization enhancement layer; and

a second texture blocking layer between the second pinned magnetic layer and the second polarization enhancement layer,

wherein the second texture blocking layer includes Ta, W, Mo, Nb, Ir, or Os, and

wherein the second pinned magnetic layer includes Co/Pt, Co/Pd, Co/Ir, Co/Ru, Co/Os, Fe/W, Co/W or Co/Ni with a thickness of between about 1.5 nm and about 15 nm.