IP Library › Granted Patent US 10,067,423
Granted Patent B2
US 10,067,423 · App. 15/128,392 · Granted Sep 4, 2018

Additive and resist underlayer film-forming composition containing the same

Inventors: Yuto Hashimoto (Toyama, JP); Yasushi Sakaida (Toyama, JP); Kenji Takase (Toyama, JP); Rikimaru Sakamoto (Toyama, JP)
Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
G03F7/11C08F212/14C08F220/22C08F220/28C08F220/38C09D7/125C09D7/65C09D167/02G03F7/039G03F7/091G03F7/094G03F7/162G03F7/168G03F7/2006G03F7/325G03F7/38G03F7/40C08F2220/282C08F2220/382
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Quick Facts
Patent No.
US 10,067,423
App. No.
15/128,392
Granted
Sep 4, 2018
Kind
B2
Abstract

An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each R 1 is independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a —C(═O)O—R 2 — group, R 2 constituting the —C(═O)O—R 2 — group is a C 1-3 alkylene group, the alkylene group is bonded to a sulfur atom, R 3 is a hydrogen atom, methyl group, methoxy group, or halogeno group, R 4 is a C 1-3 alkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

Claims (36)

1. An additive for a resist underlayer film-forming composition comprising a copolymer having structural units of Formulae (1) to (4):

where

each R 1 is independently a hydrogen atom or methyl group,

Ar is arylene group,

Pr is a hydrogen atom or a protecting group selected from an acetyl group, a methoxymethyl group, an ethoxyethyl group, a C 4-8 tertiary alkyl group, or a pivaloyl group,

X is a direct bond or a —C(═O)O—R 2 — group,

R 2 constituting the —C(═O)O—R 2 — group is a C 1-3 alkylene group, the alkylene group is bonded to a sulfur atom,

R 3 is a hydrogen atom, methyl group, methoxy group, or halogeno group,

R 4 is a C 1-3 alkyl group in which at least one hydrogen atom is substituted with a fluoro group, and

Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton.

2. The additive according to claim 1 , wherein in the structural unit of Formula (1), Pr is the protecting group selected from an acetyl group, a methoxymethyl group, an ethoxyethyl group, a C 4-8 tertiary alkyl group, or a pivaloyl group.

3. The additive according to claim 1 , wherein the structural unit of Formula (2) is a structural unit of Formula (2a) or Formula (2b):

where

R 1 , R 2 , and R 3 each have the same definition as in claim 1 .

4. The additive according to claim 1 , wherein the structural unit of Formula (4) is a structural unit of Formula (4a):

where

each R 1 is independently a hydrogen atom or methyl group, and

R 5 is a C 2-5 hydrocarbon group.

5. The additive according to claim 1 , wherein

the copolymer is a compound synthesized by copolymerization of a monomer forming the structural unit of Formula (1), a monomer forming the structural unit of Formula (2), a monomer forming the structural unit of Formula (3), and a monomer forming the structural unit of Formula (4), and

the content of the monomer forming the structural unit of Formula (2) is 5% by mole to 40% by mole relative to a total of the four monomers of 100% by mole.

6. The additive according to claim 1 , wherein the copolymer has a weight average molecular weight of 3,000 to 20,000.

7. A resist underlayer film-forming composition containing

the additive according to claim 1 ,

a resin different from the copolymer,

an organic acid,

a cross-linking agent, and

a solvent.

8. The resist underlayer film-forming composition according to claim 7 , wherein the resin is polyester.

9. The resist underlayer film-forming composition according to claim 7 , wherein

the additive is contained in an amount of 5 parts by mass to 20 parts by mass relative to 100 parts by mass of the resin.

10. A method for forming a resist pattern comprising the steps of:

forming a resist underlayer film on a substrate using the resist underlayer film-forming composition according to claim 7 ;

forming a resist film on the resist underlayer film using a positive resist solution;

exposing the resist film through a photomask; and

developing the resist film by a solvent capable of dissolving an unexposed area of the resist film after the exposure, to remove the unexposed area.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2016
From: HASHIMOTO, YUTO; SAKAIDA, YASUSHI; TAKASE, KENJI; SAKAMOTO, RIKIMARU
To: NISSAN CHEMICAL INDUSTRIES, LTD.
Reel/Frame 039837/0165 →
Priority Claims (1)
JP 2014-064376 · Mar 26, 2014 · national
Continuity (1)
Related Publication 20170108777A1 · Apr 20, 2017