Apparatus and method for evaluating semiconductor device comprising thermal image processing
An apparatus for evaluating a semiconductor device includes: a chuck stage for fixing a semiconductor device; an insulating substrate; a plurality of probes fixed to the insulating substrate; a temperature adjustment unit adjusting temperatures of the plurality of probes; an evaluation/control unit causing a current to flow into the semiconductor device through the plurality of probes to evaluate an electric characteristic of the semiconductor device; an inspection plate having a front surface and a rear surface opposite to each other; a thermal image measurement unit acquiring a thermal image of the inspection plate when distal end portions of the plurality of probes are pressed against the front surface; and a thermal image processing unit performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes.
1. An apparatus for evaluating a semiconductor device comprising:
a chuck stage for fixing a semiconductor device;
an insulating substrate;
a plurality of probes fixed to the insulating substrate;
a temperature adjustment unit adjusting temperatures of the plurality of probes;
an evaluation/control unit causing a current to flow into the semiconductor device through the plurality of probes to evaluate an electric characteristic of the semiconductor device;
an inspection plate having a front surface and a rear surface opposite to each other;
a thermal image measurement unit either disposed under a rear surface of the inspection plate or attached to the insulating substrate, the thermal image measurement unit acquiring a thermal image of the inspection plate when distal end portions of the plurality of probes are pressed against the front surface; and
a thermal image processing unit performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes.
2. The apparatus for evaluating a semiconductor device of claim 1 , wherein the thermal image measurement unit is disposed on the rear surface side of the inspection plate.
3. The apparatus for evaluating a semiconductor device of claim 1 , wherein the thermal image measurement unit is disposed on the insulating substrate.
4. The apparatus for evaluating a semiconductor device of claim 1 , further comprising a cooler cooling the inspection plate.
5. The apparatus for evaluating a semiconductor device of claim 4 , wherein the cooler includes a blower sending air toward the inspection plate.
6. The apparatus for evaluating a semiconductor device of claim 4 , wherein the cooler includes a heat-radiation fin disposed on the inspection plate.
7. The apparatus for evaluating a semiconductor device of claim 4 , wherein the cooler includes a peltier element disposed on the inspection plate.
8. The apparatus for evaluating a semiconductor device of claim 1 , further comprising a heater heating the inspection plate.
9. The apparatus for evaluating a semiconductor device of claim 1 , further comprising a protecting member disposed on the front surface of the inspection plate and having a hardness lower than that of the distal end portions of the plurality of probes.
10. The apparatus for evaluating a semiconductor device of claim 1 , wherein the inspection plate is made of a metal material.
11. The apparatus for evaluating a semiconductor device of claim 1 , wherein the inspection plate is made of a ceramic material.
12. The apparatus for evaluating a semiconductor device of claim 1 , wherein the inspection plate is made of a thermal anisotropic material.
13. The apparatus for evaluating a semiconductor device of claim 10 , further comprising a base unit supporting the inspection plate,
wherein the inspection plate and the base unit are integrally configured with same material.
14. A method for evaluating a semiconductor device comprising:
heating a plurality of probes fixed to an insulating substrate by a temperature adjustment unit;
pressing distal end portions of the plurality of heated probes against a front surface of an inspection plate and acquiring a thermal image of the inspection plate by a thermal image measurement unit that is either disposed under a rear surface of the inspection plate or attached to the insulating substrate;
performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes by a thermal image processing unit; and
when the in-plane positions or the temperatures of the plurality of probes are normal, bringing the distal end portions of the plurality of probes into contact with electrodes of a semiconductor device and causing a current to flow into the semiconductor device through the plurality of probes by an evaluation/control unit to evaluate an electric characteristic of the semiconductor device.
15. The method for evaluating a semiconductor device of claim 14 , further comprising, after separating the distal end portions of the plurality of heated probes from the inspection plate, cooling the inspection plate by a cooler.