Imaging device, manufacturing device, and manufacturing method
The present technology relates to an imaging device, a manufacturing device, and a manufacturing method capable of preventing a substance such as hydrogen from entering and preventing change in performance. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.
1. An imaging device, comprising:
an organic photoelectric conversion film;
an upper electrode in an upper portion of the organic photoelectric conversion film,
wherein the upper electrode comprises an oxide semiconductor, a metal oxide, and a metal thin film,
wherein the oxide semiconductor, the metal oxide, and the metal thin film are stacked, and
wherein the metal oxide is an oxidized portion of the metal thin film; and
a lower electrode in a lower portion of the organic photoelectric conversion film.
2. The imaging device according to claim 1 ,
wherein the metal oxide is aluminum oxide (AlO), and the metal thin film includes aluminum (Al).
3. The imaging device according to claim 1 ,
wherein the metal thin film includes one of aluminum (Al), indium (In), silver (Ag), gold (Au), zinc (Zn), lithium (Li), tin (Sn), antimony (Sb), magnesium (Mg), cadmium (Cd), calcium (Ca), potassium (K), rubidium (Rb), cesium (Cs), strontium (Sr), barium (Ba), cerium (Ce), yttrium (Y), hafnium (Hf), nickel (Ni), gallium (Ga), or titanium (Ti).
4. The imaging device according to claim 1 , wherein
each of the upper electrode and the lower electrode includes one of ITO, tin oxide-based SnO2, aluminum zinc oxide, gallium zinc oxide, indium zinc oxide, IGZO, CuI, InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, or ZnSnO3.
5. The imaging device according to claim 1 , wherein
the organic photoelectric conversion film includes one of a quinacridone derivative, a naphthalene derivative, an anthracene derivative, a phenanthrene derivative, a tetracene derivative, a pyrene derivative, a perylene derivative, or a fluoranthene derivative.
6. The imaging device according to claim 1 ,
wherein:
the organic photoelectric conversion film includes one of a polymer, a metal complex dye, a cyanine dye, a merocyanine dye, a phenylxanthene dye, a triphenylmethane dye, a rhodacyanine dye, a xanthene dye, a macrocyclic azaannulene dye, an azulene dye, naphthoquinone, an anthraquinone dye, a condensed polycyclic aromatic compound, a chain compound, a heterocyclic ring compound, or a first dye,
the polymer is one of phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, or diacetylene,
the metal complex dye is one of a dithiol metal complex dye, a metal phthalocyanine dye, a metal porphyrin dye, or a ruthenium complex dye,
the condensed polycyclic aromatic compound is one of anthracene or pyrene,
the chain compound is one of a condensed aromatic ring or a condensed heterocyclic compound,
the heterocyclic ring compound is one of quinoline, benzothiazole, or benzoxazole, and
the first dye is bonded by one of a squarylium group or a croconic methine group.
7. The imaging device according to claim 1 ,
wherein the metal thin film has a thickness of one of equal to 5 nm or less than 5 nm.
8. The imaging device described in claim 1 ,
wherein the metal thin film is of one of a spherical shape, and
wherein the metal film is scattered between the organic photoelectric conversion film and the upper electrode at one of equal intervals or at random intervals.
9. The imaging device according to claim 1 , further comprising a hole blocking layer between the metal thin film and the organic photoelectric conversion film.
10. The imaging device according to claim 1 , further comprising an enthalpy control layer along with the metal thin film.
11. The imaging device according to claim 10 , wherein
the enthalpy control layer is between the organic photoelectric conversion film and the lower electrode.
12. The imaging device according to claim 10 , wherein
the enthalpy control layer includes one of Ag2O, CoO, Co3O4, CdO, Cs2O, CuO, Cu2O, GeO(c), GeO2(c1), GeO2(c2), NiO(c), PbO(c), PbO2(c2), PbO2(c), PdO(c), Rb2O(c), Rb2O2(c), SeO2(c), SeO3(c), TeO2 (C), TI2O(c), or TI2O3(c).
13. A method of manufacturing an imaging device, comprising:
forming an organic photoelectric conversion film;
forming an upper electrode by stacking an oxide semiconductor, a metal oxide, and a metal thin film,
wherein the upper electrode is in an upper portion of the organic photoelectric conversion film,
wherein the metal oxide is an oxidized portion of the metal thin film; and
forming a lower electrode in a lower portion of the organic photoelectric conversion film.
14. The method of manufacturing the imaging device according to claim 13 , wherein the metal thin film is formed by a vapor deposition.
15. The method of manufacturing the imaging device according to claim 13 ,
wherein the metal thin film is of one of a spherical shape, and
wherein the metal thin film is scattered between the organic photoelectric conversion film and the upper electrode at one of equal intervals or at random intervals.
16. The method of manufacturing the imaging device according to claim 13 , further comprising forming a hole blocking layer between the metal thin film and the organic photoelectric conversion film.
17. The method of manufacturing the imaging device according to claim 13 , wherein further comprising forming an enthalpy control layer along with the metal thin film.