Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors
A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.
1. One or more filters for electromagnetic radiation, each of the filters comprising:
a silicon surface of a silicon photodetector; and
a multilayer stack on the silicon surface, the multilayer stack including a metal layer separating a first dielectric spacer layer and a second dielectric layer, the first dielectric spacer layer directly on the silicon surface, wherein:
the multilayer stack forms a mismatched cavity comprising the silicon surface separated from the metal layer, and
the dielectric layers, the metal layer having a plasma frequency, and the silicon surface:
transmit ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and
suppress transmission of out-of-band electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.
2. The filters of claim 1 , wherein the range of wavelengths is 100 nm-300 nm and the wavelengths outside the range of wavelengths include wavelengths corresponding to visible light and infrared radiation.
3. The filters of claim 1 , wherein:
the dielectric layers are selected from materials transparent to the ultraviolet radiation the dielectric layers have one or more thicknesses, and the metal layer has a thickness and composition, such that the filters have a a transmission of at least 50% or a maximum transmission for the wavelength range desired for a given ratio relative to transmission for wavelengths outside this range.
4. The filters of claim 1 , wherein:
transparency of the dielectric layers to the ultraviolet radiation, one or more thicknesses of the dielectric layers, and
reflectivity of the metal layer, are effective to achieve each of the filters having:
higher transmission for the ultraviolet radiation, and
increased reflectivity of the out-of-band electromagnetic radiation,
as compared to a filter comprising the metal layer separating the first and second dielectric layers and deposited on a quartz substrate.
5. The filters of claim 1 , wherein:
measured transmission of the ultraviolet radiation and the out-of-band electromagnetic radiation by each of the filters is within 10% of a calculated transmission of the ultraviolet radiation and the out-of-band electromagnetic radiation, the calculated transmission calculated using a simulation of one or more of the filters.
6. The filters of claim 1 , wherein:
thicknesses of the dielectric layers and the metal layer are adjusted to account for oxidation of one or more of the layers.
7. The filters of claim 1 , wherein:
the cavities are Fabry-Perot cavities, and
the metal layer, the dielectric layers, and the silicon surface:
destructively phase-match reflection of the ultraviolet radiation so as to increase transmission of the ultraviolet radiation to the semiconductor photodetector, and
increase reflection of the out-of-band electromagnetic radiation away from the semiconductor photodetector.
8. The filters of claim 7 , wherein the dielectric layers comprise at least one dielectric selected from hafnium oxide, aluminum oxide, silicon dioxide, aluminum fluoride, and magnesium fluoride, and the metal layer comprise aluminum or a dielectric that reflects the out-of-band electromagnetic radiation.
9. The filters of claim 1 , further comprising:
a second metal layer separating a third dielectric layer and the second dielectric layer.
10. The filters of claim 9 , wherein the dielectric layers each have a thickness in a range of 20-100 nm and the metal layers each have a thickness in a range of 5-50 nm.
11. The filters of claim 9 , further comprising a third metal layer on the third dielectric layer and separating the third dielectric spacer layer from a fourth dielectric spacer layer.
12. The filters of claim 1 , wherein the semiconductor photodetector is at least one detector chosen from an avalanche photodiode (APD), CCD, CMOS imaging detector, and a silicon photodiode.
13. The filters of claim 1 , wherein:
the semiconductor photodetector has a passivation layer comprising one or more delta doped layers configured to provide the semiconductor photodetector having a peak quantum efficiency greater than 40% for the ultraviolet radiation.
14. The filters of claim 1 , further comprising a scintillator electromagnetically coupled to each of the filters, wherein the scintillators each emit scintillation comprising the ultraviolet radiation in response to interactions with energetic photons or particles.
15. A system for performing Positron Emission Tomography (PET) comprising the filters of claim 1 , further comprising:
pairs of scintillators each comprising a first scintillator and a second scintillator, the first scintillator positioned to receive a first gamma photon and emit a first scintillation in response thereto, the second scintillator positioned to receive a second gamma photon and emit a second scintillation in response thereto, the first and second gamma photons emitted as a pair from an electron-positron annihilation, and the positron emitted by a radionuclide tracer introduced into a biological cell; and
pairs of the filters, comprising a first filter and a second filter, the first filter positioned to receive the first scintillation and the second filter positioned to receive the second scintillation.
16. The filters of claim 1 , wherein the filters each further comprise a longpass filter that reduces transmission of wavelengths shorter than 100 nm.
17. The filters of claim 1 , wherein:
the metal layer comprises aluminum and has a thickness in a range of 5-50 nm, and
the dielectric layers comprise Al 2 O 3 and each have a thickness in a range of 20-100 nm.
18. A method of fabricating a filter for electromagnetic radiation, comprising:
depositing a multilayer stack on a silicon surface of a silicon photodetector, the multilayer stack including a metal layer separating a first dielectric spacer layer and a second dielectric layer, wherein:
the multilayer stack forms a mismatched cavity comprising the silicon surface separated from the metal layer, and the dielectric layers, the metal layer having a plasma frequency, and the silicon surface:
transmit ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and
suppress transmission of out-of-band electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.
19. The method of claim 18 , wherein the depositing comprises atomic layer deposition under growth conditions controlling a number of alternating chemical exposures so as to afford more precise control over thickness, uniformity, and repeatability such that:
wherein:
measured transmission of the ultraviolet radiation and the out-of-band electromagnetic radiation by the filters is within 10% of a calculated transmission of the electromagnetic radiation and the out of band electromagnetic radiation, the calculated transmission calculated using a simulation of the filters.
20. A filter for electromagnetic radiation, comprising:
first and second dielectric layers separated by a metal layer, the first dielectric layer directly on a semiconductor surface of a semiconductor substrate, such that:the filter transmits ultraviolet radiation to the semiconductor substrate, the ultraviolet radiation having a range of wavelengths, and
the filter suppresses transmission of out-of-band electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor substrate.